526 results on '"Pezoldt, J"'
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2. Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)
3. Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates
4. Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
5. Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
6. Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo
7. High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
8. Foxp3+ T cells expressing RORγt represent a stable regulatory T-cell effector lineage with enhanced suppressive capacity during intestinal inflammation
9. Planar nanowire transistors from two-dimensional materials
10. The intestinal micro-environment imprints stromal cells to promote efficient Treg induction in gut-draining lymph nodes
11. Lattice Location Determination of Ge in SiC by ALCHEMI
12. Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
13. Electrical gating and rectification in graphene three-terminal junctions
14. Strain relaxation and void reduction in SiC on Si by Ge predeposition
15. Beta to alpha transition and defects on SiC on Si grown by CVD
16. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
17. Graphene field effect transistor improvement by graphene–silicon dioxide interface modification
18. Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
19. AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
20. Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC
21. Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
22. Structural characterization of sputtered indium oxide films deposited at room temperature
23. Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure
24. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces.
25. Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
26. Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method
27. PECVD silicon carbide deposited at different temperature
28. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts
29. Nanoelectromechanical devices for sensing applications
30. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
31. Carbon surface diffusion and SiC nanocluster self-ordering
32. Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
33. 5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
34. In Situ Spectroscopic Ellipsometry Studies of The Interaction Process of Ethene With Si Surfaces During Sic Formation
35. The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
36. Thermal Wave Analysis: A Tool for Non-Invasive Testing in Ion Beam Synthesis of Wide Band Gap Materials
37. On the Entrance Effects and the Influence of Buoyancy Forces on the Fluid Flow in Rtp Reactors
38. Auger investigations of thin SiC films
39. Micro-electromechanical systems based on 3C-SiC/Si heterostructures
40. Growth of three-dimensional SiC clusters on Si modelled by KMC
41. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
42. Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
43. The transition from 2D to 3D nanoclusters of silicon carbide on silicon
44. Cubic InN on [formula omitted]-plane sapphire
45. Self-organized SiC nanostructures on silicon
46. In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
47. Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
48. Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation
49. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
50. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
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