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232 results on '"Perevalov, A. V."'

8. The charge transport mechanism and electron trap nature in thermal oxide on silicon

Author

Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Orlov, Oleg M., and Krasnikov, Gennady Ya.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV, $W_\mathrm{opt}=3.2$ eV, respectively, were determined. Charge flowing leads to oxygen vacancies generation, and the leakage current increases due to the increase of charge trap density. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. It is found that the oxygen vacancies act as electron traps in SiO$_2$., Comment: 5 pages, 3 figures, 1 table

Published
2016
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11. Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

Author

Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., and Chin, A.

Subjects
Condensed Matter - Materials Science
Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf$_{0.5}$Zr$_{0.5}$O$_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf$_{0.5}$Zr$_{0.5}$O$_2$ was discussed., Comment: 4 pages, 3 figures, 1 table

Published
2015
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12. Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films.

Author

Baklanov, Mikhail R., Gismatulin, Andrei A., Naumov, Sergej, Perevalov, Timofey V., Gritsenko, Vladimir A., Vishnevskiy, Alexey S., Rakhimova, Tatyana V., and Vorotilov, Konstantin A.

Subjects
ELECTRON tunneling, STRAY currents, ELECTRIC conductivity, DENSITY functional theory, ELECTRONIC equipment
Abstract

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler–Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials. [ABSTRACT FROM AUTHOR]

Published
2024
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13. Electron and hole bipolar injection in magnesium oxide films

Author

Perevalov, Timofey V., primary, Islamov, Damir R., additional, Zalyalov, Timur M., additional, Gismatulin, Andrei A., additional, Golyashov, Vladimir A., additional, Tereshchenko, Oleg E., additional, Gorshkov, Dmitry V., additional, and Gritsenko, Vladimir A., additional

Published
2024
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19. Origin of defects responsible for charge transport in resistive random access memory based on hafnia

Author

Islamov, Damir R., Perevalov, T. V., Gritsenkov, V. A., Aliev, V. Sh., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V., Cheng, C. H., and Chin, Albert

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based on switching back and forth from a high-resistance state (HRS) to a low-resistance state (LRS). ReRAM cells are small, allowing for the creation of memory on the scale of terabits. One of the most promising materials for use as the active medium in resistive memory is hafnia (HfO$_2$). However, an unresolved physics is the nature of defects and traps that are responsible for the charge transport in HRS state of resistive memory. In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the HRS charge transport in resistive memory elements based on HfO$_2$. We also demonstrated that LRS transport occurs through a mechanism described according to percolation theory. Based on the model of multiphonon tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal excitation energy of the traps in hafnia was determined based on the excitation spectrum and luminescence of the oxygen vacancies. The findings of this study demonstrate that in resistive memory elements using hafnia, the oxygen vacancies in hafnia play a key role in creating defects in HRS charge transport., Comment: 13 pages, 6 figures. The manuscript to be considered for publication in Nature Physics

Published
2013

32. Critical properties and charge transport in ethylene bridged organosilica low-κ dielectrics.

Author

Perevalov, Timofey V., Gismatulin, Andrei A., Seregin, Dmitry S., Wang, Yingjie, Xu, Haoyu, Kruchinin, Vladimir N., Spesivcev, Evgeniy V., Gritsenko, Vladimir A., Nasyrov, Kamil' A., Prosvirin, Igor' P., Zhang, Jing, Vorotilov, Konstantin A., and Baklanov, Mikhail R.

Subjects
*ELECTRON energy loss spectroscopy, *SPACE charge, *X-ray photoelectron spectroscopy, *DIELECTRICS, *ELECTRON tunneling, *ETHYLENE
Abstract

Organosilicate-glass-based low-κ films containing both terminal methyl groups and an ethylene bridge between the silicon atoms are spin-on deposited by using 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane, Brij30 template, and thermal curing. The chemical composition, porosity, and internal defects are studied using Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, electron energy loss spectroscopy, UV induced luminescence, and ellipsometric porosimetry. It was found that the studied films contain oxygen-deficient centers (Si—Si bonds). The high defect density of the states near the valence-band edge of the studied low-κ films leads to a relatively small bandgap value of about 6.3 eV. The current–voltage characteristics at different temperatures were analyzed using six theoretical charge transport models where the transport is limited by the traps ionization. It was found that the best qualitative and quantitative agreement between the calculations and experimental data is achieved by using the model of phonon-assisted electron tunneling between the neutral traps and is supplemented by considering the space charge and charge carrier kinetics. Since the thermal and optical energies of the traps in the studied films are 1.6 eV and 3.2 eV, respectively, it is concluded that the traps are responsible for the charge transport in the Si—Si bonds. [ABSTRACT FROM AUTHOR]

Published
2020
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39. Oxygen Vacancies as Traps Responsible for La-Doped Hf0.5Zr0.5O2Charge Transport

Author

Perevalov, Timofey V., Gismatulin, Andrei A., Prosvirin, Igor P., Pustovarov, Vladimir A., and Gritsenko, Vladimir A.

Abstract

In the current study, a number of experimental methods combined with ab initiosimulations and charge transport simulations were used to prove that oxygen vacancies are responsible for the charge transport in thin lanthanum-doped Hf0.5Zr0.5O2(HfZrO:La) films and to establish the main charge transport mechanism. Films synthesized by an atomic layer deposition method with a doping impurity concentration of 3.5 mol % are studied. It was shown that the electronic structure and optical properties of oxygen vacancy in HfZrO:La are close to those of the oxygen vacancy in an undoped oxide. The method of oxygen vacancy generation by high-temperature annealing of an oxide in an inert medium was used, and a model of the atomic structure of HfZrO:La with oxygen vacancies was created. By analyzing the different charge transport mechanisms in dielectrics, it was shown that the charge transport in HfZrO:La is uniquely described by phonon-assisted electron tunneling between neutral neighboring traps that have a thermal trap ionization energy Wt= 1.3 eV. This value coincides with half of the blue photoluminescence Stokes shift value, which is due to oxygen vacancies, and besides, it is very close to the oxygen vacancy ionization energies found for undoped HfO2, ZrO2, and Hf0.5Zr0.5O2. Thus, the traps responsible for the charge transport in thin HfZrO:La films are oxygen vacancies.

Published
2023
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49. Optical properties of pyrolytic Silicon Nitride SiNx enriched with silicon

Author

null Gritsenko V. A., null Krasnikov G. Ya., null Bobovnikov P. G., null Rykhlitsky S. V., null Spesivtsev E. V., and null Perevalov T. V.

Abstract

Non-stoichiometric silicon nitride SiNx, enriched with silicon, is a promising material for the non-volatile resistive memory development. The current studies devoted to investigation of the optical properties of SiNx synthesized in a low-pressure reactor at 800oC at different ratios of dichlorosilane (SiH2Cl2) to ammonia (NH3). It was found that for films synthesized at SiH2Cl2/NH3=1/1, 1/2 and 1/3, the corresponding bandgap values are 3.83, 4.17 and 4.40 eV. At the same time, the corresponding values of the parameter x, found according to the theoretical dependence of the bandgap value on x for SiNx calculated from the first principles, are 1.26, 1.30 and 1.32. Thus, by increasing the SiH2Cl2/NH3 ratio, it is possible to create non-stoichiometric SiNx films with a controlled silicon enrichment degree with high uniformity of chemical composition and thickness. Keywords: silicon nitride, memristor, absorption coefficient, ellipsometry, quantum chemical modeling.

Published
2022
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50. Electronic structure of vacancy-type defects in hexagonal boron nitride

Author

null Prosvirin I. P., null Bukhtiyarov A. V., null Gritsenko V. A., and null Perevalov T. V.

Abstract

The electronic structure of vacancy-type defects in hexagonal boron nitride (h-BN) synthesized by chemical vapor deposition, promising for microelectronics, is studied. The research is carried out using X-ray photoelectron spectroscopy and a simulation within the density functional theory. It is shown that the h-BN bombardment with argon ions leads not only to the near-surface layer cleaning from organic pollutants, but also to the generation of a high intrinsic defects concentration, mainly boron-nitrogen divacances. The greater the boron-nitrogen divacances concentration is, the longer the bombardment time is. The boron-nitrogen divacansion in h-BN is a significantly more energetically favorable defect than that of isolated boron and nitrogen vacancies. It is concluded that the most probable diamagnetic vacancy-type defects capable of participating in localization and, as a consequence, in charge transport in h-BN films is the boron-nitrogen divacancy. Keywords: boron nitride (BN), photoelectron spectroscopy (XPS), quantum chemical simulation, density functional theory (DFT).

Published
2022
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