Search

Plasmonics is a rapid growing field, which has enabled both fundamental science and inventions of various quantum optoelectronic devices. An accurate and efficient method to calculate the optical response of metallic structures with feature size in the nanoscale plays an important role. Quantum hydrodynamic theory (QHT) provides an efficient description of the free-electron gas, where quantum effects of nonlocality and spill-out are taken into account. In this work, we introduce a general QHT that includes diffusion to account for the broadening, which is a key problem in practical applications of surface plasmon. We will introduce a density-dependent diffusion coefficient to give very accurate linewidth. It is a self-consistent method, in which both the ground and excited states are solved by using the same energy functional, with the kinetic energy described by the Thomas-Fermi and von Weizs\"{a}cker (vW) formalisms. In addition, our QHT method is stable by introduction of an electron density-dependent damping rate. For sodium nanosphere of various sizes, the plasmon energy and broadening by our QHT method are in excellent agreement with those by density functional theory and Kreibig formula. By applying our QHT method to sodium jellium nanorods, we clearly show that our method enables a parameter-free simulation, i.e. without resorting to any empirical parameter, such as size-dependent damping rate and diffusing coefficient. It is found that there exists a perfect linear relation between the resonance wavelength and aspect radio. The width decreases with increasing aspect ratio and height. The calculations show that our QHT method provides an explicit and unified way to account for size-dependent frequency shifts and broadening of arbitrarily shaped geometries. It is reliable and robust with great predicability, and hence provides a general and efficient platform to study plasmonics.

In our present work, five previously proposed sp$^3$ carbon crystals were suggested as silicon allotropes and their stabilities, electronic and optical properties were investigated by first-principles method. We find that these allotropes with direct or quasi-direct band gaps in range of 1.2-1.6 eV are very suitable for applications in thin-film solar cells. They display strong adsorption coefficients in the visible range of the sunlight in comparison with diamond silicon. These five silicon allotropes are confirmed possessing positive dynamical stability and remarkable themodynamical stability close to that of diamond silicon. Especially, the direct band gap M585-silicon possessing energy higher than diamond silicon only 25 meV per atom is expected to be experimentally produced for thin-film solar cells., Comment: 5 pages, 5 figures and 1 table

A superhard boron nitride phase dubbed as Z-BN is proposed as possible intermediate phase between h-BN and zinc blende BN (c-BN), and investigated using first-principles calculations within the framework of the density functional theory. Although the structure of Z-BN is similar to that of bct-BN containing four-eight BN rings, it is more energy favorable than bct-BN. Our study reveals that Z-BN, with a considerable structural stability and high density comparable to c-BN, is a transparent insulator with an indirect band gap about 5.27 eV. Amazingly, its Vickers hardness is 55.88 Gpa which is comparable to that of c-BN. This new BN phase may be produced in experiments through cold compressing AB stacking h-BN due to its low transition pressure point of 3.3 GPa., Comment: 5 pages, 5 figures

Using a generalized genetic algorithm, we propose four new sp3 carbon allotropes with 5-6-7 (5-6-7-type Z-ACA and Z-CACB) or 4-6-8(4-6-8-type Z4-A3B1 and A4-A2B2) carbon rings. Their stability, mechanical and electronic properties are systematically studied using first-principles method. We find that all these four carbon allotropes show amazing stability in comparison with recently proposed carbon phases. Both ZACA and Z-CACB are direct-band-gap semiconductors with band gaps of 2.261 eV and 4.196 eV, respectively. Whereas Z4-A3B1 and A4-A2B2 are indirect-band-gap semiconductors with band gaps of 3.105 eV and 3.271 eV, respectively. Their mechanical properties reveal that all these four carbon allotropes are superhard materials comparable to diamond., Comment: 6 pages, 4 figures, submit to PCCP on 21-Feb-2012

Two new carbon allotropes (H-carbon and S-carbon) are proposed, as possible candidates for the intermediate superhard phases between graphite and diamond obtained in the process of cold compressing graphite, based on the results of first-principles calculations. Both H-carbon and S-carbon are more stable than previously proposed M-carbon and W-carbon and their bulk modulus are comparable to that of diamond. H-carbon is an indirect-band-gap semiconductor with a gap of 4.459 eV and S-carbon is a direct-band-gap semiconductor with a gap of 4.343 eV. The transition pressure from cold compressing graphite is 10.08 GPa and 5.93 Gpa for H-carbon and S-carbon, respectively, which is in consistent with the recent experimental report., Comment: 5pages,4figures,submitted to Phys.Rev.Lett on 18Jan12, transfer to Phys.Rev.B on 25Mar12; Solid State Communications(2012), http://dx.doi.org/10.1016/j.ssc.2012.05.022