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Nonlinear optics has generated a wide range of applications in the fields of optical communications, biomedicine, and materials science, with nonlinear conversion efficiency serving as a vital metric for its progress. However, the weak nonlinear response of materials, high optical loss, and inhomogeneous distribution of the light field hamper the improvement of the conversion efficiency. We present a composite grating waveguide structure integrated into a Bragg reflector platform. This design achieves high Q in the spectral range by exploiting the unique properties exhibited by the bound states in the Bloch surface wave-enhanced continuum, and efficient second-harmonic generation by close-field amplification with the optical field tightly localized in a nonlinear material. By manipulating the symmetry of the grating, a precise tune over the near field within a designated wavelength range can be achieved. Specifically, we select a photonic crystal configuration supporting surface waves, employing TE polarization conditions and an asymmetry factor of −0.1 between the composite gratings. This configuration resonates at a fundamental wavelength of 783.5 nm, exhibiting an impressive Q-factor of 106. Notably, at an incident light intensity of 1.33 GW/cm2, we achieve a normalized electric field strength of up to 940 at the fundamental frequency and a second-harmonic conversion efficiency of up to 6 × 10−3, significantly amplifying the second-harmonic response. The proposed configuration in this investigation has the potential to be integrated into the field of nonlinear optics for sensing frequency conversion applications.

High responsivity ultraviolet (UV) photodetectors (PDs) are essential for abundant civilian and military applications. Gallium nitride (GaN) has emerged as an ideal material for UV PD fabrication due to its favorable properties. However, the quality of GaN epitaxial layers significantly impacts device performance and reliability. Sapphire-based GaN epitaxial growth technology enables the realization of high-quality GaN epitaxial layers, making it the preferred choice for GaN substrates. Nonetheless, the thermal expansion coefficient mismatch between sapphire and GaN can lead to crystal mismatch and stress accumulation at high temperatures, affecting device performance and reliability. In contrast, lithium niobate (LiNbO3) exhibits similar coefficients of thermal expansion to GaN, mitigating crystal mismatch and stress accumulation issues. Here, we report the realization of a GaN UV PD by laminating GaN membrane onto ferroelectric LiNbO3 through selective electrochemical etching of the sapphire-based GaN epitaxial film. The LiNbO3-based GaN PD achieves a specific high on/off ratio of 107. At a 5 V bias voltage, the device exhibits a high peak responsivity of 1.712 × 103 A/W under 325 nm laser illumination. Furthermore, the device demonstrates excellent performance for polarization light detection, with a polarization ratio of approximately 54.95. Exploiting the local ferroelectric polarization of x-cut LiNbO3, the photogenerated electron–hole pairs in GaN are efficiently separated by the electrostatic field from the polarization of ferroelectric LiNbO3, resulting in enhanced light-to-electric conversion efficiency. Our work presents a method for fabricating high responsivity GaN-based UV PD, showcasing the potential of integrating ferroelectric LiNbO3 to enhance device performance. [ABSTRACT FROM AUTHOR]

Two-dimensional material tungsten diselenide (WSe2) nanosheets are coated on a microfibre knot resonator (MKR) to achieve an all-optical power modulation functionality. On account of the strong absorption property of WSe2 and the resonance enhancement properties of MKR, the transmitted optical power of signal light within the WSe2-based MKR can be effectively modulated. The sensitivities of light–control–light experiments with 405- and 660-nm lasers are as high as 0.32 and 0.12 dB/mW, respectively. The sensitivities and power tuning can be enhanced by a higher resonance Q and a larger extinction ratio of MKR. In terms of the response time, the average rise and fall times are 3.5/3.7 and 3.5/4 ms with 405- and 660-nm lasers, respectively. This proposed structure is expected to achieve potential applications in all-fibre-optic–based tunable device such as optical modulator, detector, and so on.

In this paper, the spatial spectral characteristics of partial discharge (PD) under different electrode models are mainly studied. In the initial corona discharge stage, the emission spectrum is mainly emitted by the N2(C3IIu→B3IIg) energy level transition of the N2 second positive band system. The spectrum is in the ultraviolet range of 294–436 nm, and its main peak is at 337 nm. The streamer discharge stage spectrum is mainly emitted by the energy level transition of the second positive band system of N2, N+, NO, and O+ and the first positive band system of N2(B3IIg→A3 Σ u + ). In the gap of different polarity electrodes, the ultraviolet spectrum content near the positive polarity is more abundant. The UV spectra ranges are 202–225 nm and 229–292 nm, respectively. The discharge of the needle–sphere system is more intense in visible light and near-infrared light, with peaks at 500 nm and 777 nm, respectively. In addition, the PD process based on the finite element method is simulated by COMSOL Multiphysics software. The simulation results show that the distribution of high-energy electron density varies with the electrode spacing and discharge model. The influence of particle energy level transition on the spatial spectral characteristics of PD is verified. This work provides important insights and possibilities for future fluorescent fiberoptic sensing and positioning for spatial PD detection and positioning using spectral characteristic peaks as detection quantities or excitations. [ABSTRACT FROM AUTHOR]