98 results on '"Pellizzer, F."'
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2. Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
3. Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
4. Phase-change Memories
5. Switching and programming dynamics in phase-change memory cells
6. Breakdown properties of irradiated MOS capacitors
7. A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5.
8. A physics-based model of electrical conduction decrease with time in amorphous [Ge.sub.2][Sb.sub.2][Te.sub.5]
9. Parasitic reset in the programming transiet of PCMs
10. µTrench phase-change memory cell engineering and optimization
11. Electrothermal and phase-change dynamics in chalcogenide-based memories
12. Optimization metrics for Phase Change Memory (PCM) cell architectures
13. Scaling Analysis pf Phase Change Memory Technology
14. Electronic switching effect in phase-change memories
15. Single Event Effects in 90-nm Phase Change Memories
16. Phase Change Memory development trends
17. Impact of material composition on the write performance of phase-change memory devices
18. Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond
19. Reliability characterization of Phase Change Memory
20. Characterization and modelling of low-frequency noise in PCM devices
21. Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications
22. Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
23. Numerical Implementation of Low Field Resistance Drift for Phase Change Memory Simulations
24. A Phase Change Memory Compact Model for Multilevel Applications
25. Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond
26. Electrical characterization of anomalous cells in phase change memory arrays
27. A compact model for Phase Change Memories
28. Parasitic reset in the programming transient of PCMs
29. 4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
30. Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
31. Reliability Study of Phase-Change Nonvolatile Memories
32. Analysis of Phase Distribution in Phase-Change Nonvolatile Memories
33. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
34. Electronic Switching in Phase-Change Memories
35. Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
36. Non-Volatile semiconductor memories for nano-scale technology.
37. Reliability characterization of Phase Change Memory.
38. A Multi-Level-Cell Bipolar-Selected Phase-Change Memory.
39. Assessment of threshold switching dynamics in phase-change chalcogenide memories.
40. Impact of crystallization statistics on data retention for phase change memories.
41. Phase-change memory technology for embedded applications.
42. 4-Mb MOSFET-selected phase-change memory experimental chip.
43. Electrothermal and phase-change dynamics in chalcogenide-based memories.
44. An 8Mb demonstrator for high-density 1.8V Phase-Change Memories.
45. Analysis of plasma damage on phase change memory cells.
46. A new model of gate capacitance as a simple tool to extract MOS parameters
47. Precise electrical evaluation of active oxides thickness and comparison with TEM measurements
48. Electronic switching effect in phase-change memory cells.
49. Plasma Damage Impact in 0.25 um Dual-Gate Technology.
50. Thin oxide reliability and gettering efficiency in advanced silicon substrates
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