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LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.

The KM3NeT Collaboration has already produced more than one thousand acquisition boards, used for building two deep-sea neutrino detectors at the bottom of the Mediterranean Sea, with the aim of instrumenting a volume of several cubic kilometers with light sensors to detect the Cherenkov radiation produced in neutrino interactions. The the so-called Digital Optical Modules, house the PMTs and the acquisition and control electronics of the module, the Central Logic Board, which includes a Xilinx FPGA and embedded soft processor. The present work presents the architecture and functionalities of the software embedded in the soft processor of the Central Logic Board., Comment: 5 pages (5 excluding references), 1 figure. VLVnT2021 proceeding contribution

A test-bench has been set up at the INFN Sezione di Bologna to optimise key elements of the KM3NeT data acquisition system. A complete framework has been built to simulate a full detection unit and test the optical network, time synchronisation, and on-shore computing resources. A fundamental tool in the test-setup is a customized electronic board: "the OctoPAES". Based on an Altera MAX10 CPLD, it is designed to emulate in a realistic way the optical and acoustic signals recorded by the underwater detectors. They allow to test in extreme conditions the acquisition system and validate its performance with realistic data. If properly configured, the optical data provided by the OctoPAES can be combined to emulate the signals of a through-going muon or other calibration events. In this contribution the OctoPAES boards and some of their use cases at the test-bench are presented.

Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector current was measured under reverse and forward bias. The forward current was higher than the reverse at the same voltage but the difference gets smaller with increasing fluence. Rapid increase of current (breakdown) above ~ 700 V under reverse bias was observed. An annealing study at 60$^\circ$C was made to 1200 minutes of accumulated annealing time. It showed that the reverse current anneals with similar time constants as measured at lower fluences. A small increase of forward current due to annealing was seen. Collected charge was measured with electrons from $^{90}$Sr source in forward and reverse bias configurations. Under reverse bias the collected charge increased linearly with bias voltage up to 6000 electrons at 2.5$\times 10^{16}$ n/cm$^2$ and 3000 electrons at 1$\times 10^{17}$ n/cm$^2$. Rapid increase of noise was measured above $\sim$ 700 V reverse bias due to breakdown resulting in worse S/N ratio. At low bias voltages slightly more charge is measured under forward bias compared to reverse. However better S/N is achieved under reverse bias. Effective trapping times were estimated from charge collection measurements under forward bias showing that at high fluences they are much longer than values extrapolated from low fluence measurements - at 1$\times 10^{17}$ n/cm$^2$ a factor of 6 larger value was measured.

For the High-Luminosity phase of LHC, the ATLAS experiment is proposing the addition of a High Granularity Timing Detector (HGTD) in the forward region to mitigate the effects of the increased pile-up. The chosen detection technology is Low Gain Avalanche Detector (LGAD) silicon sensors that can provide an excellent timing resolution below 50 ps. The front-end read-out ASIC must maintain the performance of the sensor, while keeping low power consumption. This paper presents the results on the first prototype of a front-end ASIC, named ALTIROC0, which contains the analog stages (preamplifier and discriminator) of the read-out chip. The ASIC was characterised both alone and as part of a module with a 2$\times$2 LGAD array of 1.1$\times$1.1 mm$^2$ pads bump-bonded to it. The various contributions of the electronics to the time resolution were investigated in test-bench measurements with a calibration setup. Both when the ASIC is alone or with a bump-bonded sensor, the jitter of the ASIC is better than 20 ps for an injected charge of 10 fC. The time walk effect that arises from the different response of the preamplifier for various injected charges can be corrected up to 10 ps using a Time Over Threshold measurement. The combined performance of the ASIC and the LGAD sensor, which was measured during a beam test campaign in October 2018 with pions of 120 GeV energy at the CERN SPS, is around 40 ps for all measured modules. All tested modules show good efficiency and time resolution uniformity., Comment: 23 pages, 27 figures

The KM3NeT research infrastructure being built at the bottom of the Mediterranean Sea will host water-Cherenkov telescopes for the detection of cosmic neutrinos. The neutrino telescopes will consist of large volume three-dimensional grids of optical modules to detect the Cherenkov light from charged particles produced by neutrino-induced interactions. Each optical module houses 31 3-inch photomultiplier tubes, instrumentation for calibration of the photomultiplier signal and positioning of the optical module and all associated electronics boards. By design, the total electrical power consumption of an optical module has been capped at seven watts. This paper presents an overview of the front-end and readout electronics system inside the optical module, which has been designed for a 1~ns synchronization between the clocks of all optical modules in the grid during a life time of at least 20 years., Comment: Prepared submission to Journal of Astronomical Telescopes, Instruments, and Systems (JATIS)

KM3NeT is a research infrastructure located in the Mediterranean Sea, that will consist of two deep-sea Cherenkov neutrino detectors. With one detector (ARCA), the KM3NeT Collaboration aims at identifying and studying TeV-PeV astrophysical neutrino sources. With the other detector (ORCA), the neutrino mass ordering will be determined by studying GeV-scale atmospheric neutrino oscillations. The first KM3NeT detection units were deployed at the Italian and French sites between 2015 and 2017. In this paper, a description of the detector is presented, together with a summary of the procedures used to calibrate the detector in-situ. Finally, the measurement of the atmospheric muon flux between 2232-3386 m seawater depth is obtained., Comment: 15 pages, 9 figures

Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented., Comment: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austria

The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~\mu m^{2}}$ and $\mathrm{25 \times 100~\mu m^{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $\mathrm{5 \times 10^{15}~n_{eq}/cm^{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles., Comment: 20 pages, 19 figures

Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50$\times$50 $\mu$m$^{2}$ devices has been measured in the laboratory and beam tests at CERN SPS. A high charge collected and a high hit efficiency of 98% were found up to the highest fluence. The bias voltage to reach the target efficiency of 97% at perpendicular beam incidence was found to be about 100 V at $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ and 150 V at $2.8\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, significantly lower than for the previous IBL 3D generation with larger inter-electrode distance and than for planar sensors. The power dissipation at -25$^{\circ}$C and $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ was found to be 13 mW/cm$^2$. Hence, 3D pixel detectors demonstrated superior radiation hardness and were chosen as the baseline for the inner layer of the ATLAS HL-LHC pixel detector upgrade., Comment: 21 pages

For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |{\eta}| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 {\mu}m thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few {\mu}m. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors., Comment: 5 pages, 2 figures, Proceedings of TIPP 2017, Beijing (International Conference on The Technology and Instrumentation in Particle Physics 2017)

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 $\mu$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$. The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences., Comment: 17 pages

An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented

Studying atmospheric neutrino oscillations in the few-GeV range with a multimegaton detector promises to determine the neutrino mass hierarchy. This is the main science goal pursued by the future KM3NeT/ORCA water Cherenkov detector in the Mediterranean Sea. In this paper, the processes that limit the obtainable resolution in both energy and direction in charged-current neutrino events in the ORCA detector are investigated. These processes include the composition of the hadronic fragmentation products, the subsequent particle propagation and the photon-sampling fraction of the detector. GEANT simulations of neutrino interactions in seawater produced by GENIE are used to study the effects in the 1 - 20 GeV range. It is found that fluctuations in the hadronic cascade in conjunction with the variation of the inelasticity y are most detrimental to the resolutions. The effect of limited photon sampling in the detector is of significantly less importance. These results will therefore also be applicable to similar detectors/media, such as those in ice., Comment: 37 pages, 28 figures, JHEP published version

The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions. AFP will consist of a tracking detector, to measure the momentum of the protons, and a time of flight system to reduce the background from multiple proton-proton interactions. Following an extensive qualification period, 3D silicon pixel sensors were selected for the AFP tracker. The sensors were produced at CNM (Barcelona) during 2014. The tracker module assembly and quality control was performed at IFAE during 2015. The assembly of the first AFP arm and the following installation in the LHC tunnel took place in February 2016. This paper reviews the fabrication process of the AFP tracker focusing on the pixel modules., Comment: PIXEL 2016 proceedings; Submitted to JINST

In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented., Comment: 8 pages, 5 figures, International Workshops on Radiation Imaging Detectors 2016

3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50x250 um2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellent radiation hardness with operational voltages as low as 180 V and power dissipation of 12--15 mW/cm2 at a fluence of about 1e16 neq/cm2, measured at -25 degree C. Moreover, to cope with the higher occupancies expected at the HL-LHC, a first run of a new generation of 3D detectors designed for the HL-LHC was produced at CNM with small pixel sizes of 50x50 and 25x100 um2, matched to the FE-I4 chip. They demonstrated a good performance in the laboratory and in beam tests with hit efficiencies of about 97% at already 1--2V before irradiation., Comment: Accepted by JINST

In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 {\mu}m) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V., Comment: 7 pages, 8 figures, 1 table, Subm. to NIM A

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work., Comment: Keywords: silicon detectors, avalanche multiplication, timing detectors, tracking detectors. 8 pages. 8 Figures

In this Technical Design Report (TDR) we describe the SuperB detector that was to be installed on the SuperB e+e- high luminosity collider. The SuperB asymmetric collider, which was to be constructed on the Tor Vergata campus near the INFN Frascati National Laboratory, was designed to operate both at the Upsilon(4S) center-of-mass energy with a luminosity of 10^{36} cm^{-2}s^{-1} and at the tau/charm production threshold with a luminosity of 10^{35} cm^{-2}s^{-1}. This high luminosity, producing a data sample about a factor 100 larger than present B Factories, would allow investigation of new physics effects in rare decays, CP Violation and Lepton Flavour Violation. This document details the detector design presented in the Conceptual Design Report (CDR) in 2007. The R&D and engineering studies performed to arrive at the full detector design are described, and an updated cost estimate is presented. A combination of a more realistic cost estimates and the unavailability of funds due of the global economic climate led to a formal cancelation of the project on Nov 27, 2012., Comment: 495 pages

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper., Comment: RESMDD12 Proceedings, preprint submitted to Nuclear Instruments and Methods A

The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry., Comment: 54 pages, 48 pictures

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal., Comment: 14 pages, 12 figures

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.