Search

Results of the statistical analysis of the electrical breakdown time delay for neon-filled tube at 6.5 mbar with and without [gamma] and ultraviolet (UV) irradiation are presented in this paper. Experimental distributions of the breakdown time delay are established on the basis of 1000 successive and independent measurements for different exposition dose rates of [gamma]-irradiation, and UV illumination with known spectrum. Obtained experimental density distributions are modeled with convolution-based model, proposing two independent random variables with exponential and Gaussian distribution, respectively. The tendency of the breakdown time delay distribution to change shape from the exponential-like to the Gaussian-like is found by increasing the exposition rate of the [gamma] irradiation. In addition, the characteristic strong reduction of the time delay is identified in the tube under the UV illumination. Index Terms--Breakdown time delay, convolution-based statistical model, electrical breakdown in neon, Monte Carlo method, [gamma] and ultraviolet (UV) radiation.

This paper presents the experimental data of breakdown voltage as a function of afterglow period and voltage increase rate for neon-filled tube at pressure of 6.6 mbar. The measurements and data acquisition of breakdown voltage were performed using a digital system. The influence of gamma radiation and ultraviolet radiation on breakdown voltage was analyzed. The values of static breakdown voltage for different values of exposed dose rates of gamma radiation were estimated on the basis of the experimental breakdown voltage data using a second order polynomial fit. Index Terms--Breakdown voltage, discretized dynamic method, Gamma radiation, static breakdown voltage, ultraviolet (UV) radiation.

The paper presents experimental data of breakdown voltage as a function of voltage increase rate for nitrogen-filled tubes at pressures of 133 and 399 Pa. By fitting this data using polynomial approximation, static breakdown voltages for these tubes were estimated. The influence of voltage increase rate, voltage step, time interval between successive voltage step, and relaxation time on the static breakdown voltage was analyzed. The processes in gas advanced during breakdown were also analyzed, as well as their influence on the breakdown voltage. Index Terms--Breakdown voltage, nitrogen, relaxation time, static breakdown voltage, surface recombination, voltage increase rate, voltage step.

The contributions of the positive ions and neutral active states, remaining from previous discharge, as well as the contribution of gamma photons from [sup.60.sub.27] Co radiation source to the electrical breakdown in argon, nitrogen, and hydrogen at 6.6-mbar pressure for the various afterglow periods have been analyzed using the time delay method. The estimations of the positive ion recombination times of argon, nitrogen, and hydrogen, and the lifetime of argon metastable state, as well as the atom recombination times of nitrogen and hydrogen have been performed using this method. Index Terms--Afterglow period, Argon, electrical breakdown, hydrogen, memory curve, nitrogen, time delay.

The contributions of ions and neutral active states to secondary electron emission in the afterglow has been analyzed using the time delay method. The dependencies of mean value of time delay on relaxation time, overvoltage, and glow current have been discussed. The analysis of validity of Laue distribution for time delay has been performed, becoming the criterion for estimation of the main cause of breakdown. Thus, afterglow can be divided in three regions: one each for the role of charged and neutral species in initiation of subsequent breakdown, and third, as the transitional one. Index Terms - Laue distribution, memory curves, relaxation time, time delay.

Presents information on a study which investigated the behavior of densities of the oxide trapped charge and the interface traps in gamma-ray irradiated n-channel power vertical double-diffused metal oxide semiconductor transistors. Influence of temperature of annealing; Experimental details; Results and discussion; Conclusions.

Focuses on a study conducted on the creation and passivation processes of interface traps in metal-oxide-semiconductor transistors during annealing. Indepth look at the temperature and gate bias; Methodology used to conduct the study; Results of the study.

Response of pMOS dosemeters during two successive irradiations with gamma-ray irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been studied. The response was followed on the basis of threshold voltage shift, determined from transfer characteristics, as a function of absorbed dose or annealing time. It was shown that the threshold voltage shifts during first and second irradiation for the gate bias during irradiation of 5 and 2.5 V insignificantly differ although complete fading was not achieved after the first cycle of annealing. In order to analyse the defects formed in oxide and at the interface during irradiation and annealing, which are responsible for threshold voltage shift, midgap and charge-pumping techniques were used. It was shown that during first irradiation and annealing a dominant influence to threshold voltage shift is made by fixed oxide traps, while at the beginning of the second annealing cycle, threshold voltage shift is a consequence of both fixed oxide traps and slow switching traps. [ABSTRACT FROM PUBLISHER]

This paper presents the analysis of the surface recombination and/or de-excitation of neutral active particles in two different volume krypton-filled tubes at pressure of 2.6 mbar with 1 ppm oxygen impurities. The analysis was performed on the basis of secondary electron emission from the cathode induced by positive ions and neutral active particles using the experimental data of electrical breakdown time delay mean value td as a function of afterglow period τ (“memory curve”). It was shown that the main channel of neutral active particles' loss in afterglow is their recombination and/or de-excitation on the bulb walls. The loss rate increases with the increase of available wall surface per unit of gas volume. It was also shown that in early afterglow (15 ms for the tube with smaller bulb volume and 30 ms for the tube with bigger bulb volume) positive ions are formed in the mutual collisions of neutral active particles, and these ions dominantly influence the secondary electron emission from the cathode. In late afterglow (to 30 s for the tube with smaller bulb volume and to 150 s for the tube with bigger bulb volume) neutral active particles have dominant role in secondary electron emission from the cathode. The probability for this process decreases with the increase of afterglow period as a consequence of the decrease of the concentration of neutral active particles in gas, and this probability is smaller for the tube with smaller bulb volume. The influence of additional electron yield in the electrode gap caused by gamma radiation on breakdown initiation is also analyzed. It is shown that the influence of the neutral active particles in the process of secondary electron emission in the case of gamma radiation is also significant in both early and late afterglow. [ABSTRACT FROM AUTHOR]

The influence of afterglow period τ, voltage increase rate k, and electrode gap d on breakdown voltage Ub for a nitrogen-filled tube with spherical electrodes of diameter D>d and p=6.5 mbar has been investigated. The data for the breakdown voltage were obtained for the case when there is a presence of N(4S) atoms, which release secondary electrons via recombination on the cathode. By fitting the experimental data of breakdown voltage mean values as a function of the voltage increase rate, the static breakdown voltages for afterglow periods of 15 and 100 s were estimated. The electrical field as a function of the electrode gap using breakdown voltage mean values was also determined. It is shown that experimental results of the breakdown voltage mean value as a function of pd in the interval of d from 0.82 to 1.62 mm can be very well described with Paschen’s law, valid for the case of parallel-plate electrodes. [ABSTRACT FROM AUTHOR]

The influence of secondary electrons released by gamma radiation from the cathode of a nitrogen-filled tube, on probability of electrical breakdown and memory curve, has been investigated. The results show that the nitrogen-filled tube is sensitive to gamma radiation only at longer afterglow periods in the case of overvoltage values grater than 50%. For shorter afterglow periods, the lower values of overvoltages can be used to separate the contribution of gamma rays. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]