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Advances in bioimaging methods and hardware facilities have revolutionised the determination of numerous biological structures at atomic or near-atomic resolution. Among these developments, electron ptychography has recently attracted considerable attention because of its superior resolution, remarkable sensitivity to light elements, and high electron dose efficiency. Here, we introduce an innovative approach called multi-convergence-angle (MCA) ptychography, which can simultaneously enhance both contrast and resolution with continuous information transfer across a wide spectrum of spatial frequency. Our work provides feasibility of future applications of MCA-ptychography in providing high-quality two-dimensional images as input to three-dimensional reconstruction methods, thereby facilitating more accurate determination of biological structures.

Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric survey on the kinetics of lateral photooxidation in structurally identical WS2 and MoS2 monolayers, where electrochemical oxidation occurs at the atomically thin monolayer edges. The oxidation rate is correlated quantitatively with various crystallographic and environmental parameters, including the density of reactive sites, humidity, temperature, and illumination fluence. In particular, we observe distinctive reaction barriers of 1.4 and 0.9 eV for the two structurally identical semiconductors and uncover an unusual non-Marcusian charge transfer mechanism in these dimensionally confined monolayers due to the limit in reactant supplies. A scenario of band bending is proposed to explain the discrepancy in reaction barriers. These results add important knowledge into the fundamental electrochemical reaction theory in low-dimensional systems., Comment: 20 pages, 4 figures

Lattice defects and interfacial absorbates represent two extrinsic but ubiquitous factors that exert profound impacts on the luminescent properties of semiconductors. However, their impacts are normally tangled and remain to be separately elucidated. Here, we clarify the individual roles of each factor by tracking the weight evolution of photonic quasiparticles by modulating the densities of sulfur vacancies in monolayer MoS$_2$ via ad hoc defect engineering. In particular, we perform atomistic analyses on the densities of sulfur vacancies by employing atomically resolved scanning transmission electron microscopy to quantitatively characterize the generation rates of sulfur vacancies in MoS$_2$ on two types of substrates with opposite surface hydrophobicity natures. We reveal that the generation rate of sulfur vacancies can even double on the hydrophilic substrates. More importantly, the impact of sulfur vacancies over the weight of trionic emission is closely associated with the substrate hydrophobicity, which is manifested noticeably in the hydrophobic substrates, but insignificant in the hydrophilic ones. The results represent an in-depth understanding on the roles of the extrinsic factors on the luminescent properties in atomically thin semiconductors., Comment: 20 pages, 5 figures, 1 SI

Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands. Here, we report the observation of the energy funneling effect and ambient photodelamination phenomenon in inhomogeneous few-layer WS$_2$ flakes under low illumination fluencies down to several nW/$\mu$m$^{2}$ and its potential as a non-invasive post-etching strategy for selectively stripping the local excessive overlying islands. Photoluminescent tracking on the photoetching traces reveals relatively fast etching rates around $0.3-0.8\,\mu$m/min at varied temperatures and an activation energy of $1.7\,$eV. By using crystallographic and electronic characterization, we also confirm the non-invasive nature of the low-power photodelamination and the highly preserved lattice quality in the as-etched monolayer products, featuring a comparable average density of atomic defects (ca.$4.2\times 10^{13}\,$cm$^{-2}$) to pristine flakes and a high electron mobility up to $80\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$) at room temperature. This approach opens a non-invasive photoetching route for thickness uniformity management in 2D van der Waals semiconductor wafers for electronic applications., Comment: 30 pages, 4 figures, with SI

With the development of high-speed electron detectors, four-dimensional scanning transmission electron microscopy (4D-STEM) has emerged as a powerful tool for characterizing microstructures in material science and life science. However, the complexity of 4D-STEM data processing necessitates an intuitive graphical user interface software for researchers. In this regard, we have developed 4D-Explorer, an open-source, lightweight and extensible software for processing 4D-STEM data. It offers a visual and interactive workflow, including data preparation, calibration, image reconstruction and generating quantitative results. Furthermore, during calibration, our software includes a novel algorithm for rotational offset correction that uses a defocused 4D-STEM dataset and its axial bright field image, which has lower experimental requirements than conventional methods. We anticipate that 4D-Explorer will help researchers harness the capabilities of 4D-STEM technology., Comment: 44 pages, 23 figures