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In the present work, various concentrations of Ti (1, 2, 3, 4 and 5 at %) doped SnO2 thin films were grown onto glass substrate using cost effective sol-gel spin coating method and subsequently investigated the effect of Ti doping concentration on structural, optical and electrical properties. X-ray diffraction studies revealed that all deposited films exhibit polycrystalline tetragonal rutile structure with fundamental orientation peak along (110) direction. Moreover, Ti doped SnO2 films were started growing along (211) direction and it was more pronounced with increasing of Ti concentration. The average grain size was decreased with the increase of Ti concentration, confirmed by XRD and AFM studies. The UV–visible spectrometer measurements shown that the average transmittance of un-doped SnO2 film was above 85%, whereas Ti doped SnO2 films were found to be a decrease of transmittance up to 77% in 5 at% Ti:SnO2 film. The optical band gap energy values were considerably decreased from 3.91 to 3.73 eV with increase of Ti content. Further, the sheet resistance (Rsh) and resistivity (ρ) values were found to be decreased with the increase of Ti doping up to 3 at % then it was slightly increased in 4 and 5 at % of Ti:SnO2 films. The efficiency parameter figure of merit (φ) was also estimated for all deposited films with the function of Ti doping.

Different concentrations (1, 3, and 5 at %) of Ga doped SnO2 thin films were deposited onto glass substrate using sol-gel spin coating technique. X-ray diffraction studies revealed that all deposited films were exhibited tetragonal rutile structure of SnO2 with preferred orientation along (110) direction. The AFM micrographs shown that the grains are in spherical structure, and the average grain size decreased with the increase of Ga doped concentration in SnO2 lattice. In the visible light region, the average transmittance of pure SnO2 film found to be above 85%, whereas Ga doped SnO2 films were found to be a decrease of transmittance up to 74 % in 5 at % Ga doped SnO2 film. The optical band gap energy values were considerably decreased from 3.92 to 3.68 eV with the increase of Ga content. Further, the sheet resistance (Rsh) and resistivity (ρ) values were found to be increased with the increase of Ga doping. The efficiency parameter figure of merit (ϕ) was estimated for all deposited films and it was found to be decreased from 3.3 × 10-3 Ω-1 for pure SnO2 to 0.7 × 10-3 Ω-1 for 5 at % Ga doped SnO2 film.