1. Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection
- Author
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Maria Carulla, Rebecca Barten, Filippo Baruffaldi, Anna Bergamaschi, Giacomo Borghi, Maurizio Boscardin, Martin Brückner, Tim A. Butcher, Matteo Centis Vignali, Roberto Dinapoli, Simon Ebner, Francesco Ficorella, Erik Fröjdh, Dominic Greiffenberg, Omar Hammad Ali, Shqipe Hasanaj, Julian Heymes, Viktoria Hinger, Thomas King, Pawel Kozlowski, Carlos Lopez Cuenca, Davide Mezza, Konstantinos Moustakas, Aldo Mozzanica, Giovanni Paternoster, Kirsty A. Paton, Sabina Ronchin, Christian Ruder, Bernd Schmitt, Patrick Sieberer, Dhanya Thattil, Konrad Vogelsang, Xiangyu Xie, and Jiaguo Zhang
- Subjects
soft X-ray sensors ,entrance window ,quantum efficiency ,Chemical technology ,TP1-1185 - Abstract
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile of the n+ region. We present the measurement of the quantum efficiency in the soft X-ray energy range for silicon sensors with several process variations in the fabrication of planar sensors with thin entrance windows. The quantum efficiency for 250 eV photons is increased from almost 0.5% for a standard sensor to up to 62% as a consequence of these developments, comparable to the quantum efficiency of backside-illuminated scientific CMOS sensors. Finally, we discuss the influence of the various process parameters on quantum efficiency and present a strategy for further improvement.
- Published
- 2024
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