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Light-harvesting devices made from PbS quantum dot (QD) absorbers are one of the many promising technologies of third-generation photovoltaics. Their simple, solution-based fabrication together with a highly tunable and broad light absorption makes their application in newly developed solar cells particularly promising. In order to yield devices with reduced voltage and current losses, PbS QDs need to have strategically passivated surfaces, most commonly achieved through lead iodide and bromide passivation. The interdot spacing is then predominantly filled with residual amorphous lead halide species that remain from the ligand exchange, thus hindering efficient charge transport and reducing device stability. Herein, we demonstrate that a post-treatment by iodide based 2-phenylethlyammonium salts (X-PEAI) and intermediate 2D perovskite formation can be used to manage the lead halide excess in the PbS QD active layer. This treatment results in improved device performance and increased shelf-life stability, demonstrating the importance of interdot spacing management in PbS quantum dot photovoltaics.

Silver bismuth sulfide (AgBiS$_2$) nanocrystals have emerged as a promising eco-friendly, low-cost solar cell absorber material. Their direct synthesis often relies on the hot-injection method, requiring the application of high temperatures and vacuum for prolonged times. Here, we demonstrate an alternative synthetic approach via a cation exchange reaction. In the first-step, bis(stearoyl)sulfide is used as an air-stable sulfur precursor for the synthesis of small, monodisperse Ag2S nanocrystals at room-temperature. In a second step, bismuth cations are incorporated into the nanocrystal lattice to form ternary AgBiS$_2$ nanocrystals, without altering their size and shape. When implemented into photovoltaic devices, AgBiS$_2$ nanocrystals obtained by cation exchange reach power conversion efficiencies of up to 7.35%, demonstrating the efficacy of the new synthetic approach for the formation of high-quality, ternary semiconducting nanocrystals.

The fabrication of metal halide perovskite films using the solvent-engineering method is increasingly common. In this method, the crystallisation of the perovskite layer is triggered by the application of an antisolvent during the spin-coating of a perovskite precursor solution. Herein, we introduce the current state of understanding of the processes involved in the crystallisation of perovskite layers formed by solvent engineering, focusing in particular on the role of antisolvent properties and solvent-antisolvent interactions. By considering the impact of the Hansen solubility parameters, we propose guidelines for selecting the appropriate antisolvent and outline open questions and future research directions for the fabrication of perovskite films by this method.

The synthesis of metal sulfide nanocrystals is a crucial step in the fabrication of quantum dot (QD) photovoltaics. Control over the quantum dot size during synthesis allows for precise tuning of their optical and electronic properties, making them an appealing choice for electronic applications. This flexibility has led to the implementation of quantum dots in both highly-efficient single junction solar cells and other optoelectronic devices including photodetectors and transistors. Most commonly, metal sulfide quantum dots are synthesized using the hot-injection method utilizing toxic, and air- and moisture sensitive sulfur source: bis(trimethylsilyl) sulfide (TMS)2S. Here, we present bis(stearoyl) sulfide (St2S) as a new type of air-stable sulfur precursor for the synthesis of sulfide-based QDs, which yields uniform, pure, and stable nanocrystals. Photovoltaic devices based on these QDs are equally efficient as those fabricated by (TMS)2S but exhibit an enhanced operational stability. These results highlight that St2S can be widely adopted for the synthesis of metal sulfide quantum dots for a range of optoelectronic applications.

Metal halide perovskites are an emerging class of crystalline semiconductors of great interest for application in optoelectronics. Their properties are dictated not only by their composition, but also by their crystalline structure and microstructure. While significant efforts were dedicated to the development of strategies for microstructural control, significantly less is known about the processes that govern the formation of their crystalline structure in thin films, in particular in the context of crystalline orientation. In this work, we investigate the formation of highly oriented triple cation perovskite films fabricated by utilizing a range of alcohols as an antisolvent. Examining the film formation by in-situ grazing-incidence wide-angle X-ray scattering reveals the presence of a short-lived highly oriented crystalline intermediate, which we identify as FAI-PbI2-xDMSO. The intermediate phase templates the crystallisation of the perovskite layer, resulting in highly oriented perovskite layers. The formation of this DMSO containing intermediate is triggered by the selective removal of DMF when alcohols are used as an antisolvent, consequently leading to differing degrees of orientation depending on the antisolvent properties. Finally, we demonstrate that photovoltaic devices fabricated from the highly oriented films, are superior to those with a random polycrystalline structure in terms of both performance and stability.

Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (e.g. donor/acceptor) or doping (e.g. PN Si junction) or even varying their dimensionality (e.g. 3D/2D). In this work we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming $\gamma$-CsPbI3/$\beta$-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the $\beta$-CsPbI3 by the larger bandgap $\gamma$-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.

The use of antisolvents during the fabrication of solution-processed lead halide perovskite layers is increasingly common. Usually, the antisolvent is applied by pipetting during the spin-coating process, which often irreversibly alters the composition of the perovskite layer, resulting in the formation of PbI2 at the surface and bulk of the perovskite layer. Here, we demonstrate that by applying the antisolvent via carrier-gas free spraying, the stoichiometry of the perovskite layer is far better preserved. Consequently, the photovoltaic performance of triple cation photovoltaic devices fabricated in an inverted architecture is enhanced, mainly due to an increase in the open-circuit voltage. By exploring different volumes of antisolvent, we show that spraying as little as 60 uL results in devices with power conversion efficiencies as high as 21%. Moreover, solar cells with sprayed antisolvent are more stable than those fabricated by pipetting the antisolvent.

Deposition of perovskite thin films by antisolvent engineering is one of the most common methods employed in perovskite photovoltaics research. Herein, we report on a general method that allows the fabrication of highly efficient perovskite solar cells by any antisolvent via the manipulation of the antisolvent application rate. Through a detailed structural, compositional and microstructural characterization of perovskite layers fabricated by 14 different antisolvents, we identify two key factors that influence the quality of the perovskite active layer: the solubility of the organic precursors in the antisolvent and its miscibility with the host solvent(s) of the perovskite precursor solution. Depending on these two factors, each antisolvent can be utilized to produce high performance devices reaching power conversion efficiencies (PCEs) that exceed 21%. Moreover, we demonstrate that by employing the optimal antisolvent application procedure, highly efficient solar cells can be fabricated from a broad range of precursor stoichiometries, with either a significant excess or deficiency of organic iodides.

Lead halide perovskites are a remarkable class of materials that have emerged over the past decade as being suitable for application in a broad range of devices, such as solar cells, light-emitting diodes, lasers, transistors, and memory devices, among others. While they are often solution-processed semiconductors deposited at low temperatures, perovskites exhibit properties one would only expect from highly pure inorganic crystals that are grown at high temperatures. This unique phenomenon has resulted in fast-paced progress toward record device performance; unfortunately, the basic science behind the remarkable nature of these materials is still not well understood. This review assesses the current understanding of the photoluminescence (PL) properties of metal halide perovskite materials and highlights key areas that require further research. Furthermore, the need to standardize the methods for characterization of PL in order to improve comparability, reliability and reproducibility of results is emphasized.

Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device, without altering any of the other device layers. As a result the VOC of the devices is enhanced by up to 130 mV with larger dipoles resulting in higher VOCs. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the VOC stemming from the built-in potential of the device.

Herein, we report on the synthesis and investigation of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in methylammonium triiodide perovskite photovoltaic devices with fullerene electron extraction layer. We find that increasing the thickness of the dipolar hole-blocking layer results in a gradual increase in the open-circuit voltage suggesting that aggregation of the molecules can enhance the dipole induced by the layer. This finding is confirmed by theoretical calculations demonstrating that while both molecules exhibit a similar dipole moment in their isolated state, this dipole is significantly enhanced when they aggregate. Ultra-violet photoemission spectroscopy measurements show that both derivatives exhibit a high ionisation potential of 7 eV, in agreement with their effective hole-blocking nature demonstrated by the devices. However, each of the molecules shows a different electron affinity due to the increased conjugation of one of the derivatives. While the change in electron transport level between the two derivatives is as high as 0.3 eV, the difference in the open-circuit voltage of both types of devices is negligible, suggesting that the electron transport level plays only a minor role in determining the open-circuit voltage of the device. Numerical device simulations confirm that the increase in built-in potential, arising from the high dipole of the electrolyte layer, compensates for the non-ideal energetic alignment of the charge transport levels, resulting in high VOC for a range of electron transport levels. Our study demonstrates that the application of small molecule electrolytes as hole-blocking layer in inverted architecture perovskite solar cells is a powerful tool to enhance the open-circuit voltage of the devices and provides useful guidelines for designing future generations of such compounds.

Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental instability remains the Achilles heel of this technology. In this work, we demonstrate that the degradation processes in PbS QDs which are exposed to oxygenated environments are tightly related to the choice of ligands, rather than their intrinsic properties. In particular, we demonstrate that while 1,2-ethanedithiol (EDT) ligands result in significant oxidation of PbS, lead iodide/lead bromide (PbX2) coated PbS QDs show no signs of oxidation or degradation. Consequently, since the former is ubiquitously used as a hole extraction layer in QD solar cells, it is predominantly responsible for the device performance evolution. The oxidation of EDT-PbS QDs results in a significantly reduced effective QD size, which triggers two competing processes: improved energetic alignment that enhances electron blocking, but reduced charge transport through the layer. At early times, the former process dominates, resulting in the commonly reported, but so far not fully explained initial increase in performance, while the latter governs the onset of degradation and deterioration of the photovoltaic performance. Our work highlights that the stability of PbS quantum dot solar cells can be significantly enhanced by an appropriate choice of ligands for all device components.

Solution-processed quantum dots (QDs) have a high potential for fabricating low cost, flexible and large-scale solar energy harvesting devices. It has recently been demonstrated that hybrid devices employing a single monovalent cation perovskite solution for PbS QD surface passivation exhibit enhanced photovoltaic performance when compared to standard ligand passivation. Herein we demonstrate that the use of a triple cation Cs0.05(MA0.17FA0.83)0.95Pb(I0.9Br0.1)3 perovskite composition for surface passivation of the quantum dots results in highly efficient solar cells, which maintain 96 % of their initial performance after 1200h shelf storage. We confirm perovskite shell formation around the PbS nanocrystals by a range of spectroscopic techniques as well as high-resolution transmission electron microscopy. We find that the triple cation shell results in a favorable energetic alignment to the core of the dot, resulting in reduced recombination due to charge confinement without limiting transport in the active layer. Consequently, photovoltaic devices fabricated via a single-step film deposition reached a maximum AM1.5G power conversion efficiency of 11.3 % surpassing most previous reports of PbS solar cells employing perovskite passivation.

Despite many advances towards improving the stability of organic photovoltaic devices, environmental degradation under ambient conditions remains a challenging obstacle for future application. Particularly conventional systems employing fullerene derivatives are prone to oxidise under illumination, limiting their applicability. Herein, we report on the environmental stability of the small molecule donor DRCN5T together with the fullerene acceptor PC70BM. We find that this system exhibits exceptional device stability, mainly due to almost constant short-circuit current. By employing ultrafast femtosecond transient absorption spectroscopy we attribute this remarkable stability to two separate mechanisms: 1) DRCN5T exhibits high intrinsic resistance towards external factors, showing no signs of deterioration. 2) The highly sensitive PC70BM is stabilised against degradation by the presence of DRCN5T through ultrafast long-range energy transfer to the donor, rapidly quenching the fullerene excited states which are otherwise precursors for chemical oxidation. We propose that this photoprotective mechanism be utilised to improve the device stability of other systems, including non-fullerene acceptors and ternary blends.

The wide band gap methylammonium lead bromide perovskite is promising for applications in tandem solar cells and light-emitting diodes. Despite its utility, there is only a limited understanding of its reproducibility and stability. Herein, the dependence of the properties, performance, and shelf storage of thin films and devices on minute changes to the precursor solution stoichiometry is examined in detail. Although photovoltaic cells based on these solution changes exhibit similar initial performance, the shelf-storage depends strongly on the precursor solution stoichiometry. While all devices exhibit some degree of healing, the bromide-deficient films show a remarkable improvement, more than doubling in their photoconversion efficiency. Photoluminescence spectroscopy experiments performed under different atmospheres suggest that this increase is due in part to a trap healing mechanism that occurs upon exposure to the environment. Our results highlight the importance of understanding and manipulating defects in lead halide perovskites to produce long-lasting, stable devices.

Four {\pi}-extended phosphoniumfluorene electrolytes ({\pi}-PFEs) are introduced as hole-blocking layers (HBL) in inverted architecture planar perovskite solar cells (PVSCs) with the structure of ITO/PEDOT:PSS/MAPbI3/PCBM/HBL/Ag. The deep-lying highest occupied molecular orbital (HOMO) energy level of the {\pi}-PFEs effectively blocks holes, decreasing contact recombination. We demonstrate that the incorporation of {\pi}-PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in a significant enhancement of the built-in potential of the device. This enhancement results in an increase in the open-circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. Our work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress non-radiative recombination in perovskite devices and compensate for a non-ideal energetic alignment at the hole-transport layer/perovskite interface.