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Over the past decade, Ag 2 Se has attracted increasing attention due to its potentially excellent thermoelectric (TE) performance as an n-type semiconductor. It has been considered a promising alternative to Bi-Te alloys and other commonly used yet toxic and/or expensive TE materials. To optimize the TE performance of Ag 2 Se, recent research has focused on fabricating nanosized Ag 2 Se. However, synthesizing Ag 2 Se nanoparticles involves energy-intensive and time-consuming techniques with poor yield of final product. In this work, we report a low-cost, solution-processed approach that enables the formation of Ag 2 Se thin films from Cu 2- x Se template films via cation exchange at room temperature. Our simple two-step method involves fabricating Cu 2- x Se thin films by the thiol-amine dissolution of bulk Cu 2 Se, followed by soaking Cu 2- x Se films in AgNO 3 solution and annealing to form Ag 2 Se. We report an average power factor (PF) of 617 ± 82 μW m -1 K -2 and a corresponding ZT value of 0.35 at room temperature. We obtained a maximum PF of 825 μW m -1 K -2 and a ZT value of 0.46 at room temperature for our best-performing Ag 2 Se thin-film after soaking for 5 minutes. These high PFs have been achieved via full solution processing without hot-pressing., Competing Interests: The authors declare no conflicts of interest., (This journal is © The Royal Society of Chemistry.)