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Among various intergranular microstructures, pore spaces in SEs play a critical role in Li-metal nucleation in SEs. To realize Li-metal nuclei-free inside the SE, removing pore spaces is essential and a commonly applicable design strategy to all SEs.

2D metallic materials offer a solution to the problem of poor scalability of elemental metals within ever-downscaling device interconnects. With the absence of surface scattering, they could be used for interconnects in future integrated circuits.

The advancement of ion transport applications will require the development of functional materials with a high ionic conductivity that is stable, scalable, and micro-patternable. We report unusually high ionic conductivity of Li+, Na+, and K+ in 2D MoS2 nanofilm exceeding 1 S/cm, which is more than 2 orders of magnitude higher when compared to that of conventional solid ionic materials. The high ion conductivity of different cations can be explained by the mitigated activation energy via percolative ion channels in 2H-MoS2, including the 1D ion channel at the grain boundary, as confirmed by modeling and analysis. We obtain field-effect modulation of ion transport with a high on/off ratio. The ion channel is large-scale patternable by conventional lithography, and the thickness can be tuned down to a single atomic layer. The findings yield insight into the ion transport mechanism of van der Waals solid materials and guide the development of future ionic devices owing to the facile and scalable device fabrication with superionic conductivity.

Pump it up Carbon nanotube yarns can be used as electrochemical actuators because infiltration with ions causes a contraction in length and an expansion in diameter. Either positive or negative ions can cause this effect. Chu et al. constructed an all-solid-state muscle that eliminated the need for an electrolyte bath, which may expand the potential for its use in applications. By infiltrating the yarns with charged polymers, the fibers start partially swollen, so the length can increase through the loss of ions. It is thus possible to increase the overall stroke of the muscle. Further, these composite materials show a surprising increase in stroke with scan rate. Science , this issue p. 494

Fluorine doping of a compositionally graded cathode, with an average concentration of Li[Ni0.80Co0.05Mn0.15]O2, yields a high discharge capacity of 216 mA h g−1 with unprecedented cycling stability by retaining 78% of its initial capacity after 8000 cycles. The cathode is cycled at 100% depth of discharge (DOD), unlike the currently deployed layered cathode whose DOD is limited to 60–80% to compensate for capacity fading and guarantee the required battery life. Additionally, the capacity and cycling stability of the cathode easily surpass those of the existing state-of-the-art batteries, while achieving the energy density goal of 800 W h kg−1cathode for electric vehicles (EV) with ultra-long cycle life. The structural and chemical stabilities of the cathode were provided by the compositional partitioning and unique microstructure of the compositionally graded cathode combined with the ordered site-intermixing of Li and transition metal (TM) ions discovered via transmission electron microscopy. F doping induced the formation of a 2ahex × 2ahex × chex superlattice from ordered Li occupation in TM slabs and vice versa, which has been proven to be essential for suppressing microcrack formation in deeply charged states, while maintaining the structural stability of the cathode during extended cycling. Furthermore, the proposed cathode allows for the recycling of used EV batteries in energy storage systems, thereby alleviating the negative environmental impact by reducing the CO2 emissions and cost associated with disposing of dead batteries.

Stretching a coiled carbon nanotube (CNT) yarn can provide large, reversible electrochemical capacitance changes, which convert mechanical energy to electricity. Here, it is shown that the performance of these "twistron" harvesters can be increased by optimizing the alignment of precursor CNT forests, plastically stretching the precursor twisted yarn, applying much higher tensile loads during precoiling twist than for coiling, using electrothermal pulse annealing under tension, and incorporating reduced graphene oxide nanoplates. The peak output power for a 1 and a 30 Hz sinusoidal deformation are 0.73 and 3.19 kW kg

The advancement of ion transport applications will require the development of functional materials with a high ionic conductivity that is stable, scalable, and micro-patternable. We report unusually high ionic conductivity of Li

The development of high-performance p-type oxides with high hole mobility and a wide bandgap is critical for the applications of metal oxide semiconductors in vertically integrated CMOS devices [Salahuddin et al., Nat. Electron. 1, 442 (2018)]. Sn2+-based oxides such as SnO and K2Sn2O3 have recently been proposed as high-mobility p-type oxides due to their relatively low effective hole masses, which result from delocalized Sn s-orbital character at the valence band edge. Here, we introduce a promising ternary Sn-O-X compound, Ta2SnO6, which exhibits strong valence band dispersion and a large bandgap. In order to evaluate the performance of this oxide as a p-type semiconductor, we perform first-principles calculations of the phonon-limited room-temperature carrier mobilities in SnO, SnO2, and Ta2SnO6. Electron relaxation time is evaluated, accounting for the scatterings from acoustic deformation potentials and polar optical phonons (POP), within the isotropic and dispersionless approximation. At room temperature, the electron/hole mobilities in a given material (SnO, SnO2, and Ta2SnO6) are found to be limited by POP scattering. SnO2 shows high room-temperature electron mobility of 192 cm2/(V s), while SnO and Ta2SnO6 exhibit impressive hole mobilities, with the upper limit at 60 and 33 cm2/(V s), respectively. We find that carrier effective mass largely accounts for the differences in mobility between these oxides with correspondingly different POP scattering rates. The theoretically predicted intrinsic mobilities of each material will provide the upper limit to the real mobilities for their device applications. Our findings also suggest a necessity of further investigation to identify even higher mobility p-type oxides with smaller hole effective masses.

Thin films of optimally doped(001)-oriented $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$ are epitaxially integrated on silicon(001) through growth on a single crystalline $$\hbox {SrTiO}_{3}$$ buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the $$\hbox {SrTiO}_{3}$$ buffer enables high quality $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$ films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick $$\hbox {SrTiO}_{3}$$ buffer, 50-nm thick $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }$$ films that exhibit a transition temperature of $$\sim $$ 93 K, and a narrow transition width (

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.