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2. 30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor.

Author

Lee, Bokyoung, Kim, Yongil, Bang, Jungho, Nam, Seung Hee, Noh, Ji Yong, Park, Kwon-Shik, and Yoon, Soo Young

Subjects
SILICON nitride films, THIN film transistors, THIN films, INDIUM gallium zinc oxide, HYDROGEN ions, HYDROGEN plasmas
Abstract

To achieve a highly reliable IGZO transistor, silicon nitride thin film, as a passivation layer, has been extensively investigated in recent years, mainly due to readily available fabrication, along with good barrier performance. Here, we found out that larger amount hydrogen residuals was observed in the PECVD deposited SiNx passivation layer, more stable the IGZO oxide device exhibited, which is abnormal behavior to that commonly known in the literatures. Given that FT‐IR and SIMS analysis with various controlled SiNx thin film upon different deposition conditions, the plasma parameters such as power, pressure, source gas ratio could affect hydrogen ion diffusivity into the IGZO layer during the deposition and the chemical composition of hydrogen residuals in the resulting SiNx layer, which is more dominant, rather than absolute hydrogen contents itself, to the initial electrical properties as well the stability of the IGZO transistor device. [ABSTRACT FROM AUTHOR]

Published
2024
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6. P‐252: Late‐News Poster: Deep Learning based Inverse Design Technology for White Organic Light‐emitting Diode Thin‐film Structure.

Author

Lee, In-Goo, Park, Sehong, Lee, Daeheung, Kim, Injue, Park, Kwon-Shik, Shin, Jeong Min, Park, Chanhyung, Jang, Min Seok, and Yoon, Sooyoung

Subjects
ARTIFICIAL neural networks, DESIGN techniques, ERROR rates, ARTIFICIAL intelligence, DIODES
Abstract

We propose a reverse design technique for WOLEDs using an artificial neural network. The inverse neural network is trained by combining forward and inverse neural networks and predicts the thin‐film structure from the out‐coupling spectrum. The predicted structures have a low error rate of less than 9 percent, demonstrating effectiveness of the inverse neural network. [ABSTRACT FROM AUTHOR]

Published
2024
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7. P‐88: Low reflection antistatic material design for improving ambient contrast ratio of LCD Panel.

Author

Kim, Chang Eun, Lee, Jinuk, Yoon, Sang Soon, Kim, Ju Hyuk, Hwang, Jae Chul, Kwak, Taehyoung, Park, Kwon-Shik, and Yoon, Soo-Young

Subjects
REFLECTANCE
Abstract

To enhance the ambient contrast ratio of LCD panel, the reduction of panel reflectance must be considered. A new antistatic material composition is designed to lower the refractive index, and the multilayer structure is derived based on optical simulation. By applying the new antistatic material and multilayer structure, the decrease of panel reflection and improvement of ambient contrast ratio are proven. [ABSTRACT FROM AUTHOR]

Published
2024
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10. 33‐1: Invited Paper: Development of Deuteration Technology to Improve Lifetime of OLED EX and Identification of Stability of Deuterated Materials

Author

Yu, Young-Jun, primary, Kim, Sang-Beom, additional, Lee, Kyung-Hoon, additional, Back, Ji-Ho, additional, Park, Kwon-Shik, additional, Yoon, Soo-Young, additional, Hong, Jayeon, additional, You, Youngmin, additional, Lee, Dong Gyu, additional, Park, Jeehong, additional, and Yi, Yeonjin, additional

Published
2023
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11. P‐252: Late‐News Poster:Deep Learning based Inverse Design Technology for White Organic Light‐emitting Diode Thin‐film Structure

Author

Lee, In-Goo, Park, Sehong, Lee, Daeheung, Kim, Injue, Park, Kwon-Shik, Shin, Jeong Min, Park, Chanhyung, Jang, Min Seok, and Yoon, Sooyoung

Abstract

We propose a reverse design technique for WOLEDs using an artificial neural network. The inverse neural network is trained by combining forward and inverse neural networks and predicts the thin‐film structure from the out‐coupling spectrum. The predicted structures have a low error rate of less than 9 percent, demonstrating effectiveness of the inverse neural network.

Published
2024
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15. Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

Author

Yang, Tae Jun, primary, Kim, Je-Hyuk, additional, Ryoo, Chang II, additional, Myoung, Seung Joo, additional, Kim, Changwook, additional, Baeck, Ju Heyuck, additional, Bae, Jong-Uk, additional, Noh, Jiyong, additional, Lee, Seok-Woo, additional, Park, Kwon-Shik, additional, Kim, Jeom-Jae, additional, Yoon, Soo-Young, additional, Kim, Yoon, additional, and Kim, Dae Hwan, additional

Published
2023
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22. Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Author

Choi, Sungju, primary, Park, Jingyu, additional, Hwang, Seong‐Hyun, additional, Kim, Changwook, additional, Kim, Yong‐Sung, additional, Oh, Saeroonter, additional, Baeck, Ju Heyuck, additional, Bae, Jong Uk, additional, Noh, Jiyong, additional, Lee, Seok‐Woo, additional, Park, Kwon‐Shik, additional, Kim, Jeom‐Jae, additional, Yoon, Soo Young, additional, Kwon, Hyuck‐In, additional, and Kim, Dae Hwan, additional

Published
2022
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23. 33‐1: Invited Paper:Development of Deuteration Technology to Improve Lifetime of OLED EX and Identification of Stability of Deuterated Materials

Author

Yu, Young-Jun, Kim, Sang-Beom, Lee, Kyung-Hoon, Back, Ji-Ho, Park, Kwon-Shik, Yoon, Soo-Young, Hong, Jayeon, You, Youngmin, Lee, Dong Gyu, Park, Jeehong, and Yi, Yeonjin

Abstract

Recently, LG Display completed the "EX Technology" development and is prioritizing technological innovation. This technology includes deuterium technology and personalization algorithms, which increase screen brightness (luminance) by 30% compared to existing OLEDs while producing more accurate and natural colors. In this paper, we will describe how deuterium technology can improve the lifetime of OLED products and the degradation mechanism of deuterated materials. By replacing the C‐H bond with a C‐D bond, isotope species exhibit electrochemical stability, leading to a longer device lifetime.

Published
2023
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24. Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect

Author

Jang, Jun Tae, primary, Kim, Donguk, additional, Baeck, Ju Heyuck, additional, Bae, Jong Uk, additional, Noh, Jiyong, additional, Lee, Seok-Woo, additional, Park, Kwon-Shik, additional, Kim, Jeom Jae, additional, Yoon, Soo Young, additional, Kim, Changwook, additional, Kim, Yong-Sung, additional, Oh, Saeroonter, additional, and Kim, Dae Hwan, additional

Published
2022
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37. P‐11: Effects of Ar Dilution on N2O/SiH4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics.

Author

Kim, Aram, Lee, Bokyoung, Kim, Hyeona, Bang, Jungho, Nam, Seung Hee, Park, Kwon-Shik, Kim, Jeomjae, and Yoon, Soo Young

Subjects
INDIUM gallium zinc oxide, SILICON oxide films, BREAKDOWN voltage, DIELECTRIC thin films, THIN film deposition, CHEMICAL vapor deposition
Abstract

In order to obtain a robust gate dielectric, the nitrogen atom incorporation in the silicon oxide thin film has been investigated in much prior study in recent years. Silicon oxide thin film deposition is mainly performed using SiH4‐N2O plasma by the Plasma enhanced chemical vapor deposition (PECVD) system. Reducing the N2O/SiH4 gas flow ratio increases the nitrogen content in the film. However, the film uniformity dramatically deteriorates as the N2O/SiH4 ratio is decreased and this issue makes the low N2O/SiH4 ratio condition a challenging area for the process condition. In this study, to overcome this problem Argon (Ar) addition was employed to the low N2O/SiH4 ratio plasma and we found that Ar not only allows the thin film to be uniformly deposited by increasing the plasma density due to the penning effect, but also increases Si‐N bond especially under the ratio of 10:1 condition. Even though the silicon oxide thin film was deposited with low N2O/SiH4 gas flow rate, the film uniformity and breakdown voltage characteristics dramatically improved by Ar dilution. In addition, LTPS p‐channel TFT was fabricated by utilizing the improved silicon oxide thin film as a gate dielectric layer and it showed excellent electrical characteristics. This work would be one of the most practical solutions for robust gate dielectric deposition. [ABSTRACT FROM AUTHOR]

Published
2022
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43. Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications.

Author

Kim, Jeong Oh, Hur, Jae Seok, Kim, Daesik, Lee, Byeongmoon, Jung, Jae Min, Kim, Hyeon A., Chung, Ui Jin, Nam, Seung Hee, Hong, Yongtaek, Park, Kwon‐Shik, and Jeong, Jae Kyeong

Subjects
INDIUM gallium zinc oxide, DIELECTRIC films, POLYMER films, TRANSISTORS, CONSTRUCTION materials, SMART materials
Abstract

Stretchable electronic devices should be enabled by the smart design of materials and architectures because their commercialization is limited by the tradeoff between stretchability and electrical performance limits. In this study, thin‐film transistors are fabricated using strategies that combine the unit process of a novel hybrid gate insulator and low‐temperature indium gallium tin oxide (IGTO) channel layer and a stress‐relief substrate structure. Novel hybrid dielectric films are synthesized and their molecular structural configurations are analyzed. These films consist of a polymer [poly(4‐vinylphenol‐co‐methylmethacrylate)], cross‐linkers having different binding structures [1,6‐bis(trimethoxysilyl)hexane (BTMSH), dodecyltrimethoxysilane, and poly(melamine‐co‐formaldehyde)], and an inorganic zirconia component (ZrOx). The hybrid film with BTMSH cross‐linker and 0.2 M ZrOx exhibits excellent insulating properties as well as mechanical stretchability. IGTO transistors fabricated on polyimide‐coated glass substrates are transferred to the rubber substrate to offer stretchability of the transistor pixelated thin‐film transistors. IGTO transistors fabricated on stretchable substrates using these strategies show promising electrical performance and mechanical durability. After 200 stretchability test cycles under uniaxial elongation of approximately 300%, the IGTO transistor still retains a high carrier mobility of 21.7 cm2 V−1 s−1, a low sub‐threshold gate swing of 0.68 V decade−1 and a high ION/OFF ratio of 2.0 × 107. [ABSTRACT FROM AUTHOR]

Published
2020
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44. P‐11: Effects of Ar Dilution on N2O/SiH4PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics

Author

Kim, Aram, Lee, Bokyoung, Kim, Hyeona, Bang, Jungho, Nam, Seung Hee, Park, Kwon-Shik, Kim, Jeomjae, and Yoon, Soo Young

Abstract

In order to obtain a robust gate dielectric, the nitrogen atom incorporation in the silicon oxide thin film has been investigated in much prior study in recent years. Silicon oxide thin film deposition is mainly performed using SiH4‐N2O plasma by the Plasma enhanced chemical vapor deposition (PECVD) system. Reducing the N2O/SiH4gas flow ratio increases the nitrogen content in the film. However, the film uniformity dramatically deteriorates as the N2O/SiH4ratio is decreased and this issue makes the low N2O/SiH4 ratio condition a challenging area for the process condition. In this study, to overcome this problem Argon (Ar) addition was employed to the low N2O/SiH4 ratio plasma and we found that Ar not only allows the thin film to be uniformly deposited by increasing the plasma density due to the penning effect, but also increases Si‐N bond especially under the ratio of 10:1 condition. Even though the silicon oxide thin film was deposited with low N2O/SiH4 gas flow rate, the film uniformity and breakdown voltage characteristics dramatically improved by Ar dilution. In addition, LTPS p‐channel TFT was fabricated by utilizing the improved silicon oxide thin film as a gate dielectric layer and it showed excellent electrical characteristics. This work would be one of the most practical solutions for robust gate dielectric deposition.

Published
2022
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46. 5-2: Gate Driver Circuits for Internal Compensation Type OLED Display with High Mobility Oxide TFT

Author

Kim, Dae Hwan, primary, Koo, Hyung Joon, additional, Kang, Min-Gu, additional, Chun, Kwang Il, additional, Choi, Uyhyun, additional, Ko, Younghyun, additional, Jeon, Jeyong, additional, Jeong, ChanYong, additional, Jang, Yong Ho, additional, Bae, Jong Uk, additional, Park, Kwon-shik, additional, Yoon, Soo Young, additional, and Kang, In Byeong, additional

Published
2018
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47. 19-3: Late-News Paper: Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors

Author

Jang, Jun Tae, primary, Yu, Hye Ri, additional, Ahn, Geumho, additional, Choi, Sung-Jin, additional, Kim, Dong Myong, additional, Kim, Yong-Sung, additional, Oh, Saeroonter, additional, Baeck, Ju Heyuck, additional, Bae, Jong Uk, additional, Park, Kwon-Shik, additional, Yoon, Soo Young, additional, Kang, In Byeong, additional, and Kim, Dae Hwan, additional

Published
2018
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