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Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped) cuprate, La$_2$CuO$_4$ (LCO), by means of first-principles calculations. Leveraging parameter-free Hubbard-corrected density functional theory, we obtain a ground state with band gap and Cu magnetic moment in nearly exact agreement with experiments. This enables a quantitative characterization of $e$-ph interactions. Our calculations reveal two classes of longitudinal optical (LO) phonons with strong $e$-ph coupling to hole states. These modes consist of Cu-O plane bond-stretching and bond-bending as well as vibrations of apical O atoms. The hole spectral functions, obtained with a cumulant method that can capture strong $e$-ph coupling, exhibit broad quasiparticle peaks with a small spectral weight ($Z\approx0.25$) and pronounced LO-phonon sidebands characteristic of polaron effects. Our calculations predict features observed in photoemission spectra, including a 40-meV peak in the $e$-ph coupling distribution function not explained by existing models. These results show that the universal strong $e$-ph coupling found experimentally in lanthanum cuprates is an intrinsic feature of the parent compound, and elucidates its microscopic origin., Comment: 6 pages, 4 figures

First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e-ph interactions based on singular value decomposition (SVD), a widely used matrix / image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e-ph interactions - including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature - while using only a small fraction (1-2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e-ph interactions. Furthermore, they accelerate state-of-the-art first-principles e-ph calculations by about two orders of magnitudes without sacrificing accuracy. Our Pareto-optimal parametrization of e-ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter., Comment: 12 pages, 3 figures

Bulk Dirac semimetals (DSMs) exhibit unconventional transport properties and phase transitions due to their peculiar low-energy band structure. Yet the electronic interactions governing nonequilibrium phenomena in DSMs are not fully understood. Here we show that electron-phonon (e-ph) interactions in a prototypical bulk DSM, Na3Bi, are predominantly two-dimensional (2D). Our first-principles calculations discover a 2D optical phonon with strong e-ph interactions associated with in-plane vibrations of Na atoms. We show that this 2D mode governs e-ph scattering and charge transport in Na3Bi, and induces a dynamical phase transition to a Weyl semimetal. Our work advances quantitative analysis of electron interactions in topological semimetals and reveals dominant low-dimensional interactions in bulk quantum materials., Comment: Single column, 22 pages, 5 figures

First-principles calculations enable accurate predictions of electronic interactions and dynamics. However, computing the electron spin dynamics remains challenging. The spin-orbit interaction causes various dynamical phenomena that couple with phonons, such as spin precession and spin-flip e-ph scattering, which are difficult to describe with current first-principles calculations. In this work, we show a rigorous framework to study phonon-induced spin relaxation and decoherence, by computing the spin-spin correlation function and its vertex corrections due to e-ph interactions. We apply this approach to a model system and develop corresponding first-principles calculations of spin relaxation in GaAs. Our vertex-correction formalism is shown to capture the Elliott-Yafet, Dyakonov-Perel, and strong-precession mechanisms - three independent spin decoherence regimes with distinct physical origins - thereby unifying their theoretical treatment and calculation. Our method is general and enables quantitative studies of spin relaxation, decoherence, and transport in a wide range of materials and devices., Comment: 13 pages, 4 figures

Despite the rich observational results on interstellar magnetic fields in star-forming regions, it is still unclear how dynamically significant the magnetic fields are at varying physical scales, because direct measurement of the field strength is observationally difficult. The Davis-Chandrasekhar-Fermi (DCF) method has been the most commonly used method to estimate the magnetic field strength from polarization data. It is based on the assumption that gas turbulent motion is the driving source of field distortion via linear Alfv\'en waves. In this work, using MHD simulations of star-forming clouds, we test the validity of the assumption underlying the DCF method by examining its accuracy in the real 3D space. Our results suggest that the DCF relation between turbulent kinetic energy and magnetic energy fluctuation should be treated as a statistical result instead of a local property. We then develop and investigate several modifications to the original DCF method using synthetic observations, and propose new recipes to improve the accuracy of DCF-derived magnetic field strength. We further note that the biggest uncertainty in the DCF analysis may come from the linewidth measurement instead of the polarization observation, especially since the line-of-sight gas velocity can be used to estimate the gas volume density, another critical parameter in the DCF method., Comment: 20 pages, 17 figures, accepted for publication in MNRAS

Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of spin-based quantum devices. Two main sources of phonon-induced spin decoherence - the Elliott-Yafet (EY) and Dyakonov-Perel (DP) mechanisms - have distinct physical origins and theoretical treatments. Here we show calculations that unify their modeling and enable accurate predictions of spin relaxation and precession in semiconductors. We compute the phonon-dressed vertex of the spin-spin correlation function, with a treatment analogous to the calculation of the anomalous electron magnetic moment in QED. We find that the vertex correction provides a giant renormalization of the electron spin dynamics in solids, greater by many orders of magnitude than the corresponding correction in vacuum. Our work demonstrates a general approach for quantitative analysis of spin decoherence in materials, advancing the quest for spin-based quantum technologies., Comment: 6 pages, 3 figures

Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or other charged defects. It includes the short- and long-range electron-defect (e-d) interactions on equal footing, and allows for efficient interpolation of the e-d matrix elements. We combine the e-d and electron-phonon interactions in the Boltzmann transport equation to compute the carrier mobilities in doped silicon over a wide range of temperature and doping concentrations, spanning seamlessly the defect- and phonon-limited transport regimes. The individual contributions of the defect- and phonon-scattering mechanisms to the carrier relaxation times and mean-free paths are analyzed. Our method provides a powerful tool to study electronic interactions in doped materials. It broadens the scope of first-principles transport calculations, enabling studies of a wide range of doped semiconductors and oxides with application to electronics, energy and quantum technologies.

Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. Here we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (>10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low-to-high electric fields, with broad application to power- and micro-electronics, optoelectronics, and sensing., Comment: 7 pages, 4 figures

Electron-phonon ($e$-ph) interactions are pervasive in condensed matter, governing phenomena such as transport, superconductivity, charge-density waves, polarons and metal-insulator transitions. First-principles approaches enable accurate calculations of $e$-ph interactions in a wide range of solids. However, they remain an open challenge in correlated electron systems (CES), where density functional theory often fails to describe the ground state. Therefore reliable $e$-ph calculations remain out of reach for many transition metal oxides, high-temperature superconductors, Mott insulators, planetary materials and multiferroics. Here we show first-principles calculations of $e$-ph interactions in CES, using the framework of Hubbard-corrected density functional theory (DFT+$U$ ) and its linear response extension (DFPT+$U$), which can describe the electronic structure and lattice dynamics of many CES. We showcase the accuracy of this approach for a prototypical Mott system, CoO, carrying out a detailed investigation of its $e$-ph interactions and electron spectral functions. While standard DFPT gives unphysically divergent and short-ranged $e$-ph interactions, DFPT+$U$ is shown to remove the divergences and properly account for the long-range Fr\"ohlich interaction, allowing us to model polaron effects in a Mott insulator. Our work establishes a broadly applicable and affordable approach for quantitative studies of e-ph interactions in CES, a novel theoretical tool to interpret experiments in this broad class of materials., Comment: 6 pages, 4 figures

Lattice vibrations in materials induce perturbations on the electron dynamics in the form of long-range (dipole and quadrupole) and short-range (octopole and higher) potentials. The dipole Fr\"ohlich term can be included in current first-principles electron-phonon ($e$-ph) calculations and is present only in polar materials. The quadrupole $e$-ph interaction is present in both polar and nonpolar materials, but currently it cannot be computed from first principles. Here we show an approach to compute the quadrupole $e$-ph interaction and include it in ab initio calculations of $e$-ph matrix elements. The accuracy of the approach is demonstrated by comparing with direct density functional perturbation theory calculations. We apply our method to silicon as a case of a nonpolar semiconductor and tetragonal PbTiO$_3$ as a case of a polar piezoelectric material. In both materials we find that the quadrupole term strongly impacts the $e$-ph matrix elements. Analysis of $e$-ph interactions for different phonon modes reveals that the quadrupole term mainly affects optical modes in silicon and acoustic modes in PbTiO$_3$, although the quadrupole term is needed for all modes to achieve quantitative accuracy. The effect of the quadrupole $e$-ph interaction on electron scattering processes and transport is shown to be important. Our approach enables accurate studies of $e$-ph interactions in broad classes of nonpolar, polar and piezoelectric materials., Comment: 9 pages, 5 figures, submitted

First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtained by interpolation) and the dipole-like Fr\"ohlich long-range coupling in polar materials, but lack important quadrupole effects for acoustic modes and PE materials. Here we derive and compute the long-range $e$-ph interaction due to dynamical quadrupoles, and apply this framework to investigate $e$-ph interactions and the carrier mobility in the PE material wurtzite GaN. We show that the quadrupole contribution is essential to obtain accurate $e$-ph matrix elements for acoustic modes and to compute PE scattering. Our work resolves the outstanding problem of correctly computing $e$-ph interactions for acoustic modes from first principles, and enables studies of $e$-ph coupling and charge transport in PE materials.

Perturbo is a software package for first-principles calculations of charge transport and ultrafast carrier dynamics in materials. The current version focuses on electron-phonon interactions and can compute phonon-limited transport properties such as the conductivity, carrier mobility and Seebeck coefficient. It can also simulate the ultrafast nonequilibrium electron dynamics in the presence of electron-phonon scattering. Perturbo uses results from density functional theory and density functional perturbation theory calculations as input, and employs Wannier interpolation to reduce the computational cost. It supports norm-conserving and ultrasoft pseudopotentials, spin-orbit coupling, and polar electron-phonon corrections for bulk and 2D materials. Hybrid MPI plus OpenMP parallelization is implemented to enable efficient calculations on large systems (up to at least 50 atoms) using high-performance computing. Taken together, Perturbo provides efficient and broadly applicable ab initio tools to investigate electron-phonon interactions and carrier dynamics quantitatively in metals, semiconductors, insulators, and 2D materials., Comment: 17 pages, 8 figures, submitted

Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can significantly speed up calculations of e-d relaxation times and defect-limited charge transport. We show example calculations of vacancy defects in silicon and copper, for which we compute the e-d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface) as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects.

Tardigrades are microscopic animals widely known for their survival capabilities under extreme conditions. They are the focus of current research in the fields of taxonomy, biogeography, genomics, proteomics, development, space biology, evolution, and ecology. Tardigrades, such as Hypsibius exemplaris, are being advocated as a next-generation model organism for genomic and developmental studies. The raw culture of H. exemplaris usually contains tardigrades themselves, their eggs, and algal food and feces. Experimentation with tardigrades often requires the demanding and laborious separation of tardigrades from raw samples to prepare pure and contamination-free tardigrade samples. In this paper, we propose a two-step acousto-microfluidic separation method to isolate tardigrades from raw samples. In the first step, a passive microfluidic filter composed of an array of traps is used to remove large algal clusters in the raw sample. In the second step, a surface acoustic wave-based active microfluidic separation device is used to continuously deflect tardigrades from their original streamlines inside the microchannel and thus selectively isolate them from algae and eggs. The experimental results demonstrated the efficient tardigrade separation with a recovery rate of 96% and an algae impurity of 4% on average in a continuous, contactless, automated, rapid, biocompatible manner.

We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature dependence of the spin relaxation times and analyze the contributions to spin relaxation from different phonons and valley processes. The computed spin relaxation times in silicon are in excellent agreement with experiment in the 50$-$300 K temperature range. In diamond, we predict intrinsic spin relaxation times of 540 $\mu$s at 77 K and 2.3 $\mu$s at 300 K. Our work enables precise predictions of spin-phonon relaxation times in a wide range of materials, providing microscopic insight into spin relaxation and guiding the development of spin-based quantum technologies., Comment: 6 pages, 3 figures, submitted

We present an acoustofluidic method based on travelling surface acoustic waves (TSAWs) for the induction of the self-assembly of microparticles inside a microfluidic channel. The particles are trapped above an interdigitated transducer, placed directly beneath the microchannel, by the TSAW-based direct acoustic radiation force (ARF). This approach was applied to 10 {\mu}m polystyrene particles, which were pushed towards the ceiling of the microchannel by 72 MHz TSAWs to form single- and multiple-layer colloidal structures. The repair of cracks and defects within the crystal lattice occurs as part of the self-assembly process. The sample flow through the first inlet can be switched with a buffer flow through a second inlet to control the number of particles in the crystalline structure. The constant flow-induced Stokes drag force on the parti-cles is balanced by the opposing TSAW-based ARF. This force balance is essential for the acoustics-based self-assembly of microparticles inside the microchannel. Moreover, we studied the effects of varying the input voltage and fluid flow rate on the position and shape of the colloidal structure. The active self-assembly of microparticles into crystals with multiple layers can be used in the bottom-up fabrication of colloidal structures with dimensions greater than 500 {\mu}m x 500 {\mu}m, which is expected to have important applications in various fields.