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The RF-sputtered β-Ga2O3 films prepared on sapphire substrates were treated by rapid thermal annealing (RTA) with an ultrafast processing time of 30 s. The effects of RTA at different process temperatures from 600 to 800 °C on the β-Ga2O3 films were researched. Meanwhile, the schematic diagram for the RTA-induced lattice expansion of films was proposed. The experimental results showed that the variation of Ga oxidation states and lattice oxygen was demonstrated, revealing a greater value of lattice oxygen at 700 °C. The (-201) orientation of Ga2O3 films is observed at 700 °C and 800 °C, where the (111) orientation additionally appeared at 800 °C. The larger grain size and interplanar distance of 4.71 Å for the (−201) orientation were also obtained at 700 °C, accounting for the high-quality β-Ga2O3 films and their lattice expansion. As a result, this RF-sputtered β-Ga2O3 films via the RTA process not only provide a new reference condition but also suitable for optoelectronic devices requiring control of crystallizing temperature and lattice variation.

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

THz-time domain spectroscopy is an effective method of label-free molecular detection, but it is limited by the size of the measured samples. Traditional detection approaches will have to overcome challenges when the analyte are in trace amounts. Here, we propose an enhanced mechanism for terahertz molecular fingerprint sensing, involving an all-dielectric metasurface. Based on incident wave angle scanning under light polarization, the broadband light–matter interaction is effectively enhanced, significantly improving the fingerprint signal of the molecule to be detected. The results demonstrate a new method for trace molecular detection in the terahertz region and large-scale molecular screening.

General hot-plate heating is used to form a crystal structure of films; however, how to achieve a homogeneous and regulated crystal formation will be a crucial challenge in the future. In this study, based on perovskite-series materials, organic methylamine lead trioxide (MAPbI3) films doped with inorganic lead iodide (CsPbI3) quantum dots (QDs) are treated using the rapid thermal annealing (RTA) process in argon gas to break the crystallization barrier. These RTA-treated perovskite quantum dot (PQD) films at various temperatures of 100–160 °C are detected using X-ray diffraction, X-ray spectroscopy, and absorbance measurements to investigate their structural and optical properties as well as their binding states. The experimental results demonstrate that the PQD film annealed at 120 °C has optimized characteristics, revealing better crystallinity and the lowest content of oxygen atoms (31.4%) and C-O-C bonding (20.1%). A too-high RTA temperature, more than 140 °C, causes severe degradation with the existence of PbI2. A proper RTA process, an alternative to normal heating and annealing, can effectively inhibit the occurrence of degradation and even usefully improve the performance of PQD films.

In this study, titanium dioxide (TiO2) films are prepared using spatial atomic layer deposition (sALD) as an additional compact layer of tin oxide (SnO2) electronic transport layer-based perovskite solar cells. The experimental results show that the deposition of sALD TiO2 films on the fluorine-doped tin oxide substrate improves the haze at mid-long wavelengths, compensating the optical loss caused by the absorption of the TiO2 layer in short-wavelengths. Compared to conventional cells, the insertion of the sALD TiO2 compact layer regardless the thickness shows significantly improved open-circuit voltage, indicating the enhanced hole blocking ability as evidenced by the reduced reverse saturation current. In addition, the change in TiO2 thickness is found to have impacts on short-circuit current, fill factor and hysteresis of the devices. The optimal sALD TiO2 thickness of 10 nm leads to the best cell conversion efficiency of 20.1%, approximately improved by 6% compared to that of the conventional cells. Compared to conventional ALD techniques and other methods, the sALD which does not require vacuum system has the pinhole-free, low-cost, very fast and simple processes, demonstrating the great potential of sALD films for applications in perovskite solar cells.

In this study, nanostructured pyramidal black silicon is prepared by metal assisted chemical etching method, in which the silver nitrate (AgNO3) is used as the metal catalyst. Effects of the concentration of AgNO3 on passivation and optical properties of the black silicon are investigated. The experimental results show that at the AgNO3 concentration of 0.03 M, the nanostructure length is about 300 nm, and the reflectance of the black silicon with a stack of silicon nitride (SiNx) and aluminum oxide (Al2O3) is 0.8%, which is comparable to that of the conventional black silicon with micrometer-long nanowires. In addition, an acceptably low surface recombination rate of 42 cm/s can be obtained. Plasma chemical vapor deposited SiNx is deposited well on the top of nanostructures of black silicon, but shows poor coverage at the bottom region. Spatial atomic layer deposited Al2O3 can conformally cover the nanostructures with high passivation quality. Simulation result indicates an improvement of 5.5% of conversion efficiency for the nanostructured pyramidal black silicon solar cell compared to industrial silicon solar cell. The short nanostructured pyramidal surface with low reflectance and high passivation is expected to be helpful for black silicon technology applied to photovoltaic applications.

In this study, we develop a facile and feasible synthetic technique for producing denser porous titanium dioxide (TiO2) films. The porous TiO2 films are effectively prepared using a sol–gel process with dimethylformamide (DMF). The TiO2 solution is synthesized by adjusting DMF doses ranging from 0 to 10 wt%, and the as-grown TiO2 films are further annealed at different temperatures from 300 to 500 °C. The TiO2 films exhibit an asymmetry anatase TiO2 phase as annealing temperatures increase, and a denser structure as DMF doses increase. The optical properties of all samples are studied, and the porous TiO2 obtained by 7.5 wt% DMF dose demonstrates a remarkable transmittance and reflectance of 51.87% and 27.55%, respectively, in the visible region from 350 to 850 nm when compared to the pure TiO2 films. The calculated band gap values range from 3.15 to 3.25 eV. Furthermore, the resistivity of 350 °C-annealed porous TiO2 thin film is determined by the Hall effect, revealing an increase from 4.46 to an of average 4.79 ohm · cm after injecting DMF solvent. These findings have the potential to assist a growing number of optoelectronic applications.

In this study, a composite perovskite film composed of lead cesium triiodide (CsPbI3) quantum dots (QDs) and methylammonium lead iodide (CH3NH3PbI3; MAPbI3) was proposed. The CsPbI3 QDs prepared by hot-injecting were used as an anti-solvent in precursors to passivate the surface of this composite perovskite film. The further argon (Ar) plasma treatment improves the surface of the film. The effects of the powers from 100 to 200 W on the composite perovskite film structure, chemical element composition, and optical properties were studied. The experimental results demonstrate that the CsPbI3 QDs passivation boosts the ultraviolet light absorption (350–450 nm) and inhibits the formation of the PbI2 phase. Furthermore, Ar plasma treatment effectively improved CsPbI3 QDs passivation on MAPbI3 film. The powers lower than 140 W cause C=O bonds to dissolve and coordination bonds to form between OA carboxyl moieties and undercoordinated Pb2+ ions. At 160 and 140 W, the obvious crystal phase segregation and a decrease in light absorption are observed, respectively. Meanwhile, the strong bombardment of Ar ions at higher than 160 W causes the severe degradation of MAPbI3 film.

The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The SnO2 and oxygen-deficient Sn3O4 phases coexisting in PEALD SnOx films were found. The PEALD SnOx films are composed of intrinsic oxygen vacancies with O-Sn4+ bonds and then transformed into a crystalline SnO2 phase with increased substrate temperature, revealing a direct 3.5–4.0 eV band gap and 1.9–2.1 refractive index. Lower (300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD SnOx films near an estimated 1.74 suggests the highest mobility of 12.89 cm2 V−1 s−1 at 300 °C.

Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors. The experimental results show that the Ta incorporation introduces oxygen vacancies defects, accompanied by the reduced crystallinity and optical band gap. The PEALD Ta-doped films show a resistivity three orders of magnitude lower than undoped TiO2, even at a low Ta content (0.8–0.95 at.%). The ultraviolet photoelectron spectroscopy spectra reveal that Ta incorporation leads to a down shift of valance band and conduction positions, and this is helpful for the applications involving band alignment engineering. Finally, the perovskite solar cell with Ta-doped TiO2 electron transport layer demonstrates significantly improved fill factor and conversion efficiency as compared to that with the undoped TiO2 layer.

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI3) quantum dots (QDs) into methylammonium lead iodide (MAPbI3). CsPbI3 QDs and MAPbI3 were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI3.

In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10−3 cm−1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2−9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

The effect of conventional Perovskite solar cells (PSCs) by using different concentration and spin-coating speeds of titanium dioxide (TiO2) as an electron transport layer (ETL) was studied. The influence of TiO2 based on device structure: fluorine-doped tin oxide substrate/TiO2/Perovskite (CH3NH3PbI3)/2,2′,7,7′-Tetrakis[N,N-di(4-methoxyp phenyl)amino]-9,9′-spirobifluorene/silver, is also studied. The spin-coating speed is varied in a range from 1000 to 3000 rpm to get optimal performance of device. The optimized power conversion efficiency (PCE) of PSCs with original concentration (OC) and double concentration (DC) TiO2 is 8.74 and 9.93%, respectively. The reason is attributed to excellent absorption in shorter wavelength, compact characteristic, and suitable thickness of TiO2, leading to perfect short-circuit current density (Jsc), lower series resistance (Rs), and higher fill factor (FF) of 0.75. Besides, recombination of electron and hole is also decreased due to the compact feature, leading to higher open-circuit voltage (VOC) of 0.91 V.

In this paper, we demonstrate that the inverted CH3NH3PbI3 (perovskite) solar cells (PSCs) based on fullerene (C60) as an acceptor is fabricated by applying an improved poly(3,4-ethlyenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution as a hole transport layer (HTL). The power conversion efficiency (PCE) of inverted PSCs is increased by 37.5% with stable values of open-circuit voltage (VOC) and fill factor (FF) because we enhance the viscosity of the PEDOT:PSS solution, indicating the perfect effect on both external quantum efficiency (EQE) and surface grain size. The characteristics of the PEDOT:PSS solution, which is being improved through facile methods of obtaining excellent growth of PEDOT:PSS thin film, have a considerable impact on carrier transport. A series of further processing fabrications, including reliable and feasible heating and stirring techniques before the formation of the PEDOT:PSS thin film via spin-coating, not only evaporate the excess moisture but also obviously increase the conductivity. The raised collection of holes become the reason for the enhanced PCE of 3.0%—therefore, the stable performance of FF and VOC are attributed to lower series resistance of devices and the high-quality film crystallization of perovskite and organic acceptors, respectively.

The properties of perovskite solar cells (PSCs) fabricated using various solvents was studied. The devices had an indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/CH3NH3PbI3 (fabricated by using various solvents)/fullerene (C60)/bathocuproine (BCP)/silver (Ag) structure. The solvents used were dimethylformamide (DMF), γ-butyrolactone (GBL), dimethyl sulfoxide (DMSO), a mixture of DMSO and DMF (1:1 v/v), and a mixture of DMSO and GBL (DMSO: GBL, 1:1 v/v), respectively. The power conversion efficiency (PCE) of the device fabricated using DMF is zero, which is attributed to the poor coverage of CH3NH3PbI3 film on the substrate. In addition, the PCE of the device made using GBL is only 1.74% due to the low solubility of PbI2 and CH3NH3I. In contrast, the PCE of the device fabricated using the solvents containing DMSO showed better performance. This is ascribed to the high solubilization properties and strong coordination of DMSO. As a result, a PCE of 9.77% was obtained using a mixed DMSO:GBL solvent due to the smooth surface, uniform film coverage on the substrate and the high crystallization of the perovskite structure. Finally, a mixed DMSO: DMF:GBL (5:2:3 v/v/v) solvent that combined the advantages of each solvent was used to fabricate a device, leading to a further improvement of the PCE of the resulting PSC to 10.84%.

The small molecule organic solar cells based on boron subphthalocyanine chloride (SubPc) and C60 by varying the SubPc layer thickness from 3 nm to 21 nm were fabricated. The maximum power conversion efficiency (PCE) of 1.47% was obtained at the 9 nm SubPc layer under 100 mW/cm2 AM1.5G illumination, which is attributed to reach the optimal balance between the light absorption efficiency and the carrier collection efficiency in the device. To increase the open-circuit voltage (Voc) of device, the molybdenum oxide (MoO3) and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) were inserted between the indium tin oxide and the SubPc layer, respectively. Finally, the Voc of device increased from 0.46 V to 1 V by using MoO3 buffer layer, resulting in the fact that the PCE of device increased from 1.47% to 2.52%.

The theoretical mechanism of open-circuit voltages (VOC) in OSCs based on various small molecule organic materials is studied. The structure under investigation is simple planar heterojunction (PHJ) by thermal vacuum evaporation deposition. The various wide band gaps of small molecule organic materials are used to enhance the power conversion efficiency (PCE). The donor materials used in the device include: Alpha-sexithiophene (α-6T), Copper(II) phthalocyanine (CuPc), boron subnaphthalocyanine chloride (SubNc) and boron Subphthalocyanine chloride (SubPc). It is combined with fullerene or SubPc acceptor material to obtain a comprehensive understanding of the charge transport behavior. It is found that the VOC of the device is largely limited by charge transport. This was associated with the space charge effects and hole accumulation. These results are attributed to the improvement of surface roughness and work function after molybdenum trioxide (MoO3) is inserted as an anode buffer layer.

Annealing can usually inhibit the formation of an unstable brookite mesophase in the crystal structure, enhancing the growth of an anatase titanium dioxide (TiO2) thin film. In this study, after a TiO2 solution was prepared with and without a small amount (1 wt%) of the organic solvent dimethylformamide (DMF), TiO2 films were obtained by dynamic spin-coating and were annealed at temperatures of 300, 500, and 700 °C. The structural and optical properties as well as the surface morphologies of the films were studied. The experimental results show that the TiO2 film annealed at 500 °C exhibits a polycrystalline anatase and brookite multiphase and usefully inhibits the formation of the brookite mesophase when annealed at 700 °C. Moreover, adding the DMF effectively contributes to the formation of the polycrystalline phase at 300 °C. The compactness of the annealed TiO2 film was improved by adding 1 wt% DMF, as shown by topographic images obtained by atomic force microscopy, leading to decreased transmittance and increased absorbance. The band gap (Eg) values of all the samples were also estimated. The variation of Eg was evidenced by the structural change and the redshift of the absorption edge. [ABSTRACT FROM AUTHOR]

In this research, the gold nanoparticles (GNPs) obtained by sono-electrochemical fabrication were prepared via the addition of a base solution, sodium hydroxide (NaOH), into the growth solution. The effect of the amount of NaOH on the growth of GNPs was investigated. The growth solution was improved to blend collocated acetone, cetyltrimethylammonium bromide (CTAB), and NaOH for the evenness control of GNPs. The excessive condensation reaction resulting from acetone was inhibited by adding 70 µl of NaOH to the growth solution to build a micelle template. Uniform and spherical GNPs with an average diameter of 25.5 nm and an absorption peak at 527 nm were obtained because the interaction between free electrons and hydroxyl groups loosened the micelle template. The cluster agglomeration and size distribution of GNPs were also improved according to transmission electron microscopy (TEM) observation. The results of this study can be applied to sensors to improve their sensitivity by adding more nanoparticles or enhancing the sensor signal. [ABSTRACT FROM AUTHOR]

The properties of perovskite solar cells (PSCs) fabricated using various solvents was studied. The devices had an indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/CH3NH3PbI3 (fabricated by using various solvents)/fullerene (C60)/bathocuproine (BCP)/silver (Ag) structure. The solvents used were dimethylformamide (DMF), γ-butyrolactone (GBL), dimethyl sulfoxide (DMSO), a mixture of DMSO and DMF (1:1 v/v), and a mixture of DMSO and GBL (DMSO: GBL, 1:1 v/v), respectively. The power conversion efficiency (PCE) of the device fabricated using DMF is zero, which is attributed to the poor coverage of CH3NH3PbI3 film on the substrate. In addition, the PCE of the device made using GBL is only 1.74% due to the low solubility of PbI2 and CH3NH3I. In contrast, the PCE of the device fabricated using the solvents containing DMSO showed better performance. This is ascribed to the high solubilization properties and strong coordination of DMSO. As a result, a PCE of 9.77% was obtained using a mixed DMSO:GBL solvent due to the smooth surface, uniform film coverage on the substrate and the high crystallization of the perovskite structure. Finally, a mixed DMSO: DMF:GBL (5:2:3 v/v/v) solvent that combined the advantages of each solvent was used to fabricate a device, leading to a further improvement of the PCE of the resulting PSC to 10.84%. [ABSTRACT FROM AUTHOR]

An optimized hybrid planar heterojunction (PHJ) of smallmolecule organic solar cells (SM-OSCs) based on copper phthalocyanine (CuPc) as donor and fullerene (C60) as acceptorwas fabricated,which obviously enhanced the performance of device by sequentially using both MoO3 and pentacene as double anode buffer layers (ABL), also known as hole extraction layer (HEL). A series of the vacuum-deposited ABL, acting as an electron and exciton blocking layer, were examined for their characteristics in SM-OSCs. The performance and reliability were compared between conventional ITO/ABL/CuPc/C60/BCP/Ag cells and the new ITO/double ABL/CuPc/C60/BCP/Ag cells.The effect on the electrical properties of these materials was also investigated to obtain the optimal thickness of ABL. The comparison shows that the modified cell has an enhanced reliability compared to traditional cells. The improvement of lifetime was attributed to the idea of double layers to prevent humidity and oxygen from diffusing into the active layer. We demonstrated that the interfacial extraction layers are necessary to avoid degradation of device. That is to say, in normal temperature and pressure, a new avenue for the device within double buffer layers has exhibited the highest values of open circuit voltage (Voc), fill factor (FF), and lifetime in this work compared to monolayer of ABL. [ABSTRACT FROM AUTHOR]