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Achieving high conversion efficiencies in second-order nonlinear optical processes is a key challenge in integrated photonics for both classical and quantum applications. This paper presents the first demonstration of Transverse Orientation-Patterned gallium phosphide (TOP-GaP) waveguides showing high-efficiency second harmonic generation. In such devices, first order modal phase matching is unlocked and optimized through the inversion of the nonlinear susceptibility along the vertical direction. We discuss here the theory behind modal phase matching in TOP structures, describe the fabrication process, and present linear and nonlinear characterizations of the TOP-GaP waveguides.

Interband Cascade Lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3-6 {\mu}m) and can operate as frequency combs (FCs). These demonstrations are based on double section cavities that can reduce dispersion and/or are adapted for radio-frequency operation. Here we show that ICLs FCs at long wavelengths, where the refractive index dispersion reduces, can be realized in a single long section cavity. We show FC generation for ICLs operating at {\lambda} ~ 4.2 {\mu}m, demonstrating narrow electrical beatnotes over a large current range. We also reconstruct the ultrafast temporal response through a modified SWIFT spectroscopy setup with two fast MWIR detectors, which shows a frequency modulated response in free-running operation. Further, we show that, through active modelocking, the ICL can be forced to generate short pulses on the order of 3 ps. This temporal response is in agreement with Maxwell Bloch simulations, highlighting that these devices possess long dynamics (~100ps) and potentially makes them appropriate for the generation of large peak powers in the MWIR., Comment: 11 pages, 6 figures

Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional points (EPs) with coupled resonators have become widespread. The on-chip realization of these functionalities is highly significant for integrated nanophotonics, but requires fine control techniques of the nanodevice properties. Here, we demonstrate pump-controlled directional emission of two coupled nanolasers that distantly interact via an integrated waveguide. This coupling scheme unusually enables both frequency- and loss-couplings between two cavities, which can be advantageously exploited to reach EPs by either detuning the cavities or controlling the gain of nanolasers. The system can be readily reconfigured from bidirectional to unidirectional emission by adjusting the pump power.

Excitability, encountered in numerous fields from biology to neurosciences and optics, is a general phenomenon characterized by an all-or-none response of a system to an external perturbation. When subject to delayed feedback, excitable systems can sustain multistable pulsing regimes, which are either regular or irregular time sequences of pulses reappearing every delay time. Here, we investigate an excitable microlaser subject to delayed optical feedback and study the emergence of complex pulsing dynamics, including periodic, quasiperiodic and irregular pulsing regimes. This work is motivated by experimental observations showing these different types of pulsing dynamics. A suitable mathematical model, written as a system of delay differential equations, is investigated through an in-depth bifurcation analysis. We demonstrate that resonance tongues play a key role in the emergence of complex dynamics, including non-equidistant periodic pulsing solutions and chaotic pulsing. The structure of resonance tongues is shown to depend very sensitively on the pump parameter. Successive saddle transitions of bounding saddle-node bifurcations constitute a merging process that results in unexpectedly large locking regions, which subsequently disconnect from the relevant torus bifurcation curve; the existence of such unconnected regions of periodic pulsing is in excellent agreement with experimental observations. As we show, the transition to unconnected resonance regions is due to a general mechanism: the interaction of resonance tongues locally at an extremum of the rotation number on a torus bifurcation curve. We present and illustrate the two generic cases of disconnecting and of disappearing resonance tongues. Moreover, we show how a maximum and a minimum of the rotation number appears naturally when two torus bifurcation curves undergo a saddle transition (where they connect differently)., Comment: 11 figures

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide., Comment: 21 pages, 6 figures

The realization of high-frequency unipolar quantum optoelectronic devices enables the demonstration of high bitrate free space data transmission in the second atmospheric window. Data-bits are written onto the laser emission using a large bandwidth amplitude modulator that operates by shifting the absorption of an optical transition in and out of the laser frequency.

Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling and the suppression of two-photon absorption in the material allows us to operate the device at optomechanical cooperativities greatly exceeding one. Alternatively, when using a pulsed upconversion pump, we demonstrate that we induce less than one thermal noise phonon. We include a high-impedance on-chip matching resonator to mediate the mechanical load with the 50-Ohm source. Our results establish gallium phosphide as a versatile platform for ultra-low-noise conversion of photons between microwave and optical frequencies.

The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template., Comment: 6 figures

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources., Comment: 30 pages, 9 figures

Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides unique insights into the growth of InGaN: the transitionfrom GaN to InGaN and vice versa occurs in discreet increments of composition; each incrementcorresponds to one monolayer of the interface, indicating that nucleation takes longer than thelateral growth of the step. Strain-state analysis is also performed by applying Peak-Pair Analysisto the positions of the atomic columns identified the quantification of the contrast. The strainmappings yield an estimate of the composition in good agreement with the one obtained fromquantified HAADF-STEM, albeit with a lower precision. Possible improvements to increase theprecision of the strain mappings are discussed, opening potential pathways for the quantification ofarbitrary quaternary alloys at atomic scales., Comment: 9 pages, 4 figures

Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here, we design and characterize such a piezoelectric optomechanical device fabricated from gallium phosphide in which a 2.9~GHz mechanical mode is coupled to a high quality factor optical resonator in the telecom band. The large electronic bandgap and the resulting low optical absorption of this new material, on par with devices fabricated from silicon, allows us to demonstrate quantum behavior of the structure. This not only opens the way for realizing noise-free quantum transduction between microwaves and optics, but in principle also from various color centers with optical transitions in the near visible to the telecom band., Comment: 8 pages, 5 figures