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229 results on '"Panda, Deepak Kumar"'

12. Critical Review on Machine Reading Comprehension (MRC) Developments: From High Resource to Low Resource Languages

Author

Lal, Bechoo, Shivakanth, G., Bhaskar, Arun, M. Bhaskar, Ashish, Panda, Deepak Kumar, Filipe, Joaquim, Editorial Board Member, Ghosh, Ashish, Editorial Board Member, Prates, Raquel Oliveira, Editorial Board Member, Zhou, Lizhu, Editorial Board Member, Garg, Deepak, editor, Narayana, V. A., editor, Suganthan, P. N., editor, Anguera, Jaume, editor, Koppula, Vijaya Kumar, editor, and Gupta, Suneet Kumar, editor

Published
2023
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13. Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis

Author

Dakua, Pratap Kumar, Panda, Deepak Kumar, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Lenka, Trupti Ranjan, editor, Misra, Durgamadhab, editor, and Fu, Lan, editor

Published
2023
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14. HEMT for Biosensing Applications

Author

Panda, Deepak Kumar, Lenka, Trupti Ranjan, Kaushik, Brajesh Kumar, Series Editor, Kolhe, Mohan Lal, Series Editor, Lenka, Trupti Ranjan, editor, and Nguyen, Hieu Pham Trung, editor

Published
2023
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23. Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity

Author

Teja, Pamulapati, Nagendra Reddy, N., Panda, Deepak Kumar, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Lenka, Trupti Ranjan, editor, Misra, Durgamadhab, editor, and Biswas, Arindam, editor

Published
2022
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24. Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT

Author

Hemaja, V., Panda, Deepak Kumar, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Lenka, Trupti Ranjan, editor, Misra, Durgamadhab, editor, and Biswas, Arindam, editor

Published
2022
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46. Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps.

Author

Kumar, Vydha Pradeep and Panda, Deepak Kumar

Subjects
*FIELD-effect transistors, *THERMAL noise, *CHARGE carrier mobility
Abstract

In this paper, an analytical drain current model of double gate MoS2 FET Transistor for low‐frequency noise (LFN) power spectral density is developed, and compared its response with the device simulation of the proposed device structure. The developed low‐frequency noise power spectral density (PSD) model is analyzed with respect to different Trap densities, Oxide thicknesses, and high K‐dielectric materials using the TCAD Device simulation tool. Low‐frequency noise is one of the most important noises in any device since it degrades the device's performance. So, in this paper, we used a unique charge‐control model for analyzing the low‐frequency noise by considering the mobility degradation, trapping, and de‐trapping effects caused by trap densities and device lattice structure. Usually, all the previous studies on drain currents with low frequency are based on fluctuations caused by mobility and carrier variations. In our paper, we even considered the charge density fluctuation to analyze the drain current equation. Using a Charge Control Model, we can compute the parameters like gate capacitance (Cgs, Cgd), channel length modulation, and body effect. While other LFN models like the DC model, small signal model, and hybrid model will focus mainly on the static characteristics of the device such as its DC current–voltage (I‐V) relationship, terminal resistances, and input/output conductance of the devices. All the analytical model results were calibrated with the device simulation and it is observed that both are matches each other. Further, it is observed that with an increase in Trap density, the low‐frequency noise increases and low‐frequency noise is dominant at lower frequencies only (1–10 Hz), and after this frequency range the thermal noise will be the dominant noise factor. [ABSTRACT FROM AUTHOR]

Published
2024
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47. Simulation and numerical modeling of high‐efficiency CZTS solar cells with a BSF layer.

Author

Dakua, Pratap Kumar, Panda, Deepak Kumar, Kashyap, Savita, Laidouci, Abdelmoumene, and Sadanand

Subjects
*SOLAR cells, *PHOTOVOLTAIC power systems, *COMPUTER simulation, *SIMULATION methods & models, *DOPING agents (Chemistry), *RESEARCH personnel
Abstract

The present paper deals with the photovoltaic performance‐based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces the recombination of the carriers at the back surface, thus increasing the overall current output of the solar cells. SCAPS 1D simulator is used to study the impact of several parameters on electrical properties like temperature, the thickness of the CZTS layer, acceptor doping concentration, and the impact of series and shunt resistances. Considering the optimized parameters in each layer of the solar cells, this work delivers 24.7% efficiency with the BSF layer, which is 8% more than that without the BSF layer. The results of this modeling will facilitate researchers to fabricate a highly efficient CZTS solar cell. [ABSTRACT FROM AUTHOR]

Published
2024
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48. Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET.

Author

Saha, Rajesh, Panda, Deepak Kumar, and Goswami, Rupam

Subjects
*ELECTRON density, *QUANTUM tunneling
Abstract

In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted using a TCAD simulator. Initially, a comparative study of input characteristics among conventional TFET (Device 1), intrinsic SiGe pocket TFET (Device 2), and doped SiGe pocket TFET (Device 3) is presented. It is seen that Device 2 shows an improved switching ratio (ION/IOFF) compared to other Devices. Furthermore, the RF/analog performance such as transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), cut-off frequency (fc), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) is reported for the variation in x of SiGe pocket from 0 to 1. The eBTBT rate and electron density are plotted for the variation in x of SiGe pocket Vertical TFET. The results reveal that the increase in x leads to an improvement in RF/analog performance and the tunneling rate in SiGe pocket Vertical TFET. [ABSTRACT FROM AUTHOR]

Published
2024
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