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The dispersion properties of the absorption coefficients [α(ν)] of different multi-component silicate oxide glasses have been studied in the frequency region below the boson peak by using THz-time-domain spectroscopy. The value of α(ν)/ν2 has been shown to exhibit a minimum level (R) at low frequency and subsequently a linear increase in the form of r(ν/νBP + E) with increasing frequency, where νBP is the boson peak frequency and R, r, and E are material-specific constants. It has also been found that R ∝ r and E is a constant common to most glasses. This α(ν)/ν2 behavior is ascribed to the dispersion property of the light-vibration coupling coefficient under the reasonable vibrational density of state function. The minimum (constant) and linear terms of the α(ν)/ν2 spectrum are originated from the physical/chemical disorder-induced charge fluctuations in the long-range scale (constant term) and short-range scale (linear term), respectively. The fluctuating charge (σ1) caused by uncorrelated, long-range disorders has primary significance for determining the sub-THz absorption dispersion properties, and its value has been determined for each glass material. [ABSTRACT FROM AUTHOR]

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 1014, 5 × 1014, and 1015 ions/cm2, respectively. The average values of real (n) and imaginary (κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices (n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range (Rp), straggle (Rs), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors. [ABSTRACT FROM AUTHOR]

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400 °C, 600 °C and 800 °C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~27% for as-deposited to ~10% and ~39% for ITO films heat-treated at different annealing temperatures (Ta's). Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude–Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10−3 to 10−4 Ω-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, μ = 47 cm2/V∙s, with carrier concentration, Nc = 1.31 × 1021 cm−3, was observed for ITO films annealed at Ta = 600 °C. The scattering times of the samples were in the range of 8–21 fs, with c-values of −0.63 to −0.87, indicating strong backscattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin films. For comparison, we have summarized the optical properties of ITO films sputtered onto fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400–800 nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra. [ABSTRACT FROM AUTHOR]

Terahertz (THz) time-domain spectroscopy was used to study the optical properties of two series of oxyfluorosilicate (OFS) glasses. The experimentally measured refractive indices are analyzed by using the Clausius–Mossotti equation to retrieve information about polarizability of the glass. Compared with previously studied oxide-based glasses and chalcogenides, OFS glasses exhibit a balance of relatively low absorption coefficients (6–9 cm−1) and high refractive indices (2.9–3.7) at 0.5 THz. The value of 3.7 is the highest among silicate glasses reported to date and are comparable to those of La3+:chalcogenide glasses. The relatively high values of refractive indices have been attributed to the great increase of the glass polarizability in OFS glasses, which offsets the effect of an increase in molecular volume caused by multicomponent modification of the glass structure. Comparatively low THz absorption of OFS glasses is explained by the structural relaxation effect of fluorine, which effectively suppress the charge fluctuation in the glass structure. The high refractive index and low absorption loss properties of the present OFS glasses should be useful for quasi-optic components such as lens and waveguide devices application in the sub-THz and millimeter wave region. [ABSTRACT FROM AUTHOR]

We report a first demonstration, to our knowledge, of a cw passively mode-locked Nd:GdV[O.sub.4] laser ([lambda] = 1063 nm). A relaxed saturable Bragg reflector was used. The laser generates pulses of 9.2 ps at a repetition rate of 119 MHz. As much as 5.4 W of average power was realized with a slope efficiency of 25.7%. OCIS codes: 140.3530, 140.3580, 140.4050, 140.7090, 160.6000.

We propose a piezoelectric transducer- (PZT-) based optoelectronic frequency synchronizer to control simultaneously changes in the repetition rate, the relative pulse delay, and the phase noise of a passively mode-locked femtosecond Ti:sapphire laser with an intracavity saturable Bragg reflector absorber with respect to an electronic frequency reference. An optoelectronic phase-locked-loop-based PZT feedback controller with a proportional, integral, and differential (PID) circuit and a tunable voltage regulator is designed to achieve frequency synchronization, phase-noise suppression, and delay-time tuning. When the controlling voltage is tuned from -2.6 to 2.6 V, the maximum pulse-delay range, tuning slope, and tuning resolution of the laser pulse-train are 11.3 ns, 2.3 ps/mV, and 1.2 ps, respectively. Setting the gain constant of the PID circuit at 10 or larger causes the delay-time tuning function to be linearly proportional to the controlling voltage. In the delay-time tuning mode the uncorrelated single-side-band phase-noise density of the frequency-synchronized laser is approximately -120 dBc/Hz at an offset frequency of 5 kHz, which is only 7 dBc/Hz higher than that of the electrical frequency reference. The proposed system also supports linear, continuous switching, and programmable control of the delay time of Ti:sapphire laser pulses when they are frequency synchronized to external reference clocks. OCIS codes: 120.0120, 120.5050, 320.7160.

The optical constants of a nematic liquid crystal, 4'-n-pentyl-4-cyanobiphenyl (5CB), in the frequency range 0.3-1.4 THz were determined by terahertz (THz) time-domain spectroscopy. The real parts of the extraordinary refractive index [n.sub.e] and the ordinary refractive index [n.sub.o] of 5CB varied from 1.74 to 2.04 and from 1.59 to 1.83, respectively. Liquid-crystal 5CB exhibits a relatively small absorption loss in this frequency range. The birefringence of 5CB was found to be as large as 0.21. The experimental results indicate that liquid-crystal 5CB is potentially useful for device applications in the THz frequency range. OCIS codes: 160.3710, 160.4760, 300.6270, 320.7150, 300.6530.

We demonstrate a new type of broad-band microwave phase shifter with superior performance at frequencies up to 20 GHz. This is implemented by simply adding an offset voltage prior to the loop filter (LF) in a laser-diode-based digital optoelectronic phase-locked loop (OEPLL). Accurate control of the phase of microwave signals with a continuously tunable range exceeding 640 [degrees] ([approximately]3.6[Pi]) is achieved. The phase fluctuation and long-term drift of any desired phase shift are as small as 5 [+ or -] 0.4 [degrees] and 0.08 [degrees], respectively, at 20 GHz. The relative phase instability can be maintained within 0.09 [degrees] while operating in a phase-shift-keying (PSK) scheme. We also demonstrate accurate control of relative phase difference between dual phase-locked microwave sources using the phase shifter. Our results indicate potential application of this broad-band optoelectronic phase shifter in a phased-array antenna system. Index Terms - Microwave, optoelectronic, phase shifter.

Research was conducted to examine the structural, electrical and ultrafast optical properties of furnace-annealed arsenic-ion-implanted GaAs for its applications in ultrafast optoelectronics. It was found that GaAs substrates implanted with 200-keV arsenic ions at 10 to the 16th power ions/cm2 and furnace-annealed at 500 degrees Cd-600 degrees C would have recovered its crystallinity, display picosecond photo-excited carrier lifetimes and be highly resistive.

As far as we know this is the first report on picosecond green-light generation from an actively mode-locked diode-pumped self-doubling neodymium yttrium aluminum borate (NYAB) laser. The pulse width is approximately 100 ps and is limited by imperfect antireflection coating and the intracavity doubling effect. The green average output power of this laser for mode-locked operation was more than 12 tunes higher than that for the continuous wave NYAB laser. The polarization state of the laser can be switched from ordinary to extraordinary rays by displacement of the pump spot. The polarization ratio can be better than 200 without any intracavity polarization element.