777 results on '"Palmetshofer, A."'
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2. Thermocapillary central lamella recess during droplet impacts onto a heated wall
3. Study on Preferred Duration and Reimbursement in Web-Based Experiments
4. Wetting behavior in the inertial phase of droplet impacts onto sub-millimeter microstructured surfaces
5. Reporting resource use in Germany
6. Promotionsrecht für HAWs — Sicht der Konferenz Biologischer Fachbereiche (KBF)
7. Cross-sectorial Requirements Analysis for Big Data Research
8. New Horizons for a Data-Driven Economy: Roadmaps and Action Plans for Technology, Businesses, Policy, and Society
9. Parameterization of the harmonic content of the complex MPI signal of magnetic tracers using a set of polynomial coefficients
10. Follow-up 2: Influence of Labels on Categorization
11. Behavioral Study on Preferred Duration and Reimbursement in Online Experiments
12. Ion Beam Devices for Material Processing and Analysis
13. Contactless vibration measurement for condition monitoring
14. Provenienzforschung an der Universitätsbibliothek Salzburg - ein Werkstattbericht
15. Implizite Determinierung von Plan-Belegungszeiten.
16. Buried K-Fullerides by Ion Implantation
17. KBF wieder in Präsenz unterwegs für die Biologie
18. Cry me a river
19. Fully coupled numerical simulation of a transpiration cooled rocket thrust chamber with combustion modeling
20. Epigenetic Changes and Suppression of the Nuclear Factor of Activated T Cell 1 ( NFATC1) Promoter in Human Lymphomas with Defects in Immunoreceptor Signaling
21. Hereditary Spastic paraplegia; prognostic value of evoked potential
22. Ultrafast Recombination in Ion-Damaged InP Studied by Femtosecond Luminescence
23. Reporting resource use in Germany
24. Digitale Transformation und Solidarität
25. Das richtige Signal – Besteuerung von Konzernen neu regeln
26. AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON
27. Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results
28. Implizite Determinierung von Plan-Belegungszeiten
29. Nonuniform-channel MOS device
30. Rutherford Backscattering Spectroscopy (RBS)
31. Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?
32. Autorinnen-Ratgeber
33. Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
34. Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon
35. NFATc1 autoregulation: a crucial step for cell-fate determination
36. Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements
37. Characterization of the Element Distribution Within TiN Coatings with SIMS
38. Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures
39. Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
40. Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon
41. A tumor-suppressor function for NFATc3 in T-cell lymphomagenesis by murine leukemia virus
42. Contact-dependent inhibition of angiogenesis by cardiac fibroblasts in three-dimensional fibrin gels in vitro: implications for microvascular network remodeling and coronary collateral formation
43. Range evaluation in SIMS depth profiles of Er-implantations in silicon
44. Pim-1 kinase enhances NFATc activity and neuroendocrine functions in PC12 cells
45. Multiscale approach for the analysis of channeling profile measurements of ion implantation damage
46. Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
47. Hydrogen implantation and diffusion in silicon and silicon dioxide
48. Vaccinations with T-helper type 1 directing adjuvants have different suppressive effects on the development of allergen-induced T-helper type 2 responses
49. NFAT and NF-κB factors—the distant relatives
50. Boron channeling implantations in silicon: modeling of electronic stopping and damage accumulation
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