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120 results on '"Pakulski, G."'

1. Narrow-Linewidth Semiconductor Laser With Highly Linear Frequency Modulation Response for Coherent Sensing

Author

Boudreau, S., primary, Rousseau, G., additional, Robin, D., additional, Riendeau, M-C V., additional, Larochelle, P., additional, Ayotte, S., additional, Costin, F., additional, Girard-Deschênes, É., additional, Chrétien, P., additional, Brochu, G., additional, Dufour, P., additional, Deschênes, S., additional, Dionne, P., additional, Rahim, M., additional, Pakulski, G., additional, Mohsin, M., additional, Goodchild, D., additional, Waldron, P., additional, Paquette, B., additional, and Einabad, O. Salehzadeh, additional

Published
2023
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2. Quantum dot multi-wavelength lasers for Tbit/s coherent communications and 5G wireless networks -INVITED

Author

Lu Z.G., Liu J.R., Mao Y.X., Zeb K., Liu G.C., Webber J., Rahim M., Pakulski G., Song C.Y., Vachon M., Barrios P., Poitras D., Wang S.R., Jiang W.H., and Poole P.

Subjects
Physics, QC1-999
Abstract

We will present the design, growth, fabrication, electronic control and packaging of the InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) developed by AEP of NRC in Canada. Their key technical specifications include L-I-V curves, optical and RF beating spectra, relative intensity noise (RIN), and optical phase noise of each individual wavelength channel, as well as timing jitter are investigated. Data bandwidth transmission capacity of 5.376 Tbit/s and 10.3 Tbit/s respectively in the PAM-4 and 16-QAM modulation formats are demonstrated by only using a single QD MWL chip. We have also developed a novel monolithic InAs/InP QD dual-wavelength (DW) DFB laser as a compact optical beat source to generate millimeter-wave (MMW) signals. Because of using a common cavity, highly coherent and correlated optical modes with optical linewidth as low as 15.83 kHz, spectrally pure MMW signals around 46.8 GHz with a linewidth down to 26.1 kHz were experimentally demonstrated. By using this QD DW-DFB laser, a 1Gbaud (2Gbps) MMW over-fiber transmission link is demonstrated with PAM-4 signals. The results show that the demonstrated device is suitable for high speed high capacity MMW fiber-wireless integrated fronthaul of 5G networks.

Published
2020
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4. Subwavelength silicon photonic structures for efficient light coupling from quantum dash buried heterostructure lasers and spectral filtering

Author

Schmid, J. H., primary, Cheben, P., additional, Rahim, M., additional, Janz, S., additional, Vachon, M., additional, Pakulski, G., additional, Poole, P. J., additional, Barrios, P., additional, Jiang, W., additional, Melati, D., additional, Xu, D. -X., additional, Lapointe, J., additional, Dezfouli, M. Kamandar, additional, Cheriton, R., additional, Wang, S., additional, Sanchez-Postigo, A., additional, Pereira-Martin, D., additional, Halir, R., additional, Ortega-Monux, A., additional, Wanguemert-Perez, G., additional, and Molina-Fernandez, I., additional

Published
2020
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8. Studies of high-speed metal-semiconductor-metal photodetector with a GaAs/AlGaAs/GaAs heterostructure

Author

Surridge, R., Lu, Jian, Pakulski, G., van Driel, H., and Xu, J.M.

Subjects
Photodetectors -- Innovations, Semiconductor-metal boundaries -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A fabricated GaAS/AlGaAs/GaAs heterostructure metal-semiconducor-metal photodetector (HMSM) is evaluated with respect to the conventional MSM in terms of response speed and sensitivity. Such devices have a rise and fall times of 30 ps and 23 ps, respectively, for an active region of 100 by 100 sq m. This is due to the lowersaturation capacitance, RC constant, carrier transit time and saturation velocity of the HMSM device.

Published
1993

12. Room-temperature continuous-wave opertation of GaInNAsSb laser diodes at 1.55μm

Author

Gupta, J. A., Barrios, P. J., Zhang, X., Lapointe, J., Poitras, D., Pakulski, G., Wu, X., and Delâge, A.

Abstract

The first 1.55 µm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3×589 µm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C.

Published
2005

13. 1.53µm GaInNAsSb laser diodes grown on GaAs(100)

Author

Gupta, J. A., Barrios, P. J., Zhang, X., Pakulski, G., and Wu, X.

Subjects
Physics::Optics
Abstract

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.

Published
2005

16. Single-mode 1.52 μm InAs/InP quantum dot DFB lasers

Author

Lu, Z. G., primary, Poole, P., additional, Barrios, P., additional, Jiao, Z. J., additional, Liu, J. R., additional, Pakulski, G., additional, Goodchild, D., additional, Rioux, B., additional, Springthorpe, A. J., additional, and Poitras, D., additional

Published
2011
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20. Quantum-dot semiconductor waveguide devices

Author

Lu, Z. G., primary, Liu, J. R., additional, Raymond, S., additional, Poole, P. J., additional, Barrios, P. J., additional, Haffouz, S., additional, Poitras, D., additional, Pakulski, G., additional, Taebi, S., additional, Song, Y., additional, Zhang, X. P., additional, and Hall, T., additional

Published
2007
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28. Pressure tuning of GaInNAs laser diodes in external cavity

Author

Bercha, A., primary, Dybala, F., additional, Komorowska, K., additional, Adamiec, P., additional, Bohdan, R., additional, Trzeciakowski, W., additional, Gupta, J. A., additional, Barrios, P. J., additional, Pakulski, G. J., additional, Delage, A., additional, and Wasilewski, Z. R., additional

Published
2005
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34. Quantum dot multi-wavelength lasers for Tbit/s coherent communications and 5G wireless networks -INVITED.

Author

Michinel, H., Costa, M.F., Frazao, O., Lu, Z.G., Liu, J.R., Mao, Y.X., Zeb, K., Liu, G.C., Webber, J., Rahim, M., Pakulski, G., Song, C.Y., Vachon, M., Barrios, P., Poitras, D., Wang, S.R., Jiang, W.H., and Poole, P.

Subjects
QUANTUM dots, ELECTRONIC control, BANDWIDTHS, PHOTONICS, OPTICAL properties
Abstract

We will present the design, growth, fabrication, electronic control and packaging of the InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) developed by AEP of NRC in Canada. Their key technical specifications include L-I-V curves, optical and RF beating spectra, relative intensity noise (RIN), and optical phase noise of each individual wavelength channel, as well as timing jitter are investigated. Data bandwidth transmission capacity of 5.376 Tbit/s and 10.3 Tbit/s respectively in the PAM-4 and 16-QAM modulation formats are demonstrated by only using a single QD MWL chip. We have also developed a novel monolithic InAs/InP QD dual-wavelength (DW) DFB laser as a compact optical beat source to generate millimeter-wave (MMW) signals. Because of using a common cavity, highly coherent and correlated optical modes with optical linewidth as low as 15.83 kHz, spectrally pure MMW signals around 46.8 GHz with a linewidth down to 26.1 kHz were experimentally demonstrated. By using this QD DW-DFB laser, a 1Gbaud (2Gbps) MMW over-fiber transmission link is demonstrated with PAM-4 signals. The results show that the demonstrated device is suitable for high speed high capacity MMW fiber-wireless integrated fronthaul of 5G networks. [ABSTRACT FROM AUTHOR]

Published
2020
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46. Gain spectra of 1.3 μm GaInNAs laser diodes.

Author

Zhang, X., Gupta, J. A., Barrios, P. J., Pakulski, G., Wu, X., and Delâge, A.

Subjects
DIODES, LASERS, WAVEGUIDES, WAVELENGTHS, OPTICS, ELECTRONIC modulation
Abstract

We present an experimental investigation of the optical gain properties of 1.3 μm GaInNAs double quantum well ridge waveguide laser diodes. High-resolution gain spectra versus injection current and temperature were obtained by measuring the modulation depth introduced into the spontaneous emission spectrum by the Fabry-Pérot resonances. As the injection current increases, the modal gain spectral peak experiences a small blueshift over the photon energy, and the magnitude increases asymptotically, saturating at the lasing threshold level of 24.4 cm-1. The peak of the modal gain spectra exhibits a redshift with an average rate of 0.58 nm/°C as the temperature increases from 30 to 50 °C. For wavelengths corresponding to photon energy below the band gap, the modal gain spectra converge to the internal loss of 7 cm-1. The full width at half maximum of the gain spectrum is 41.1 meV at 30 °C, 40 mA and increases with injection current at a rate of 0.42 meV/mA. The high optical gain and low internal loss indicate that GaInNAs is a promising active material for long wavelength laser diodes. [ABSTRACT FROM AUTHOR]

Published
2006
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