Search

Recent advancements in the development of memristive devices has opened new opportunities for hardware implementation of non-Boolean computing. To this end, the suitability of memristive devices for swarm intelligence algorithms has enabled researchers to solve a maze in hardware. In this paper, we utilize swarm intelligence of memristive networks to perform image edge detection. First, we propose a hardware-friendly algorithm for image edge detection based on ant colony. Second, we implement the image edge detection algorithm using memristive networks. Furthermore, we explain the impact of various parameters of the memristors on the efficacy of the implementation. Our results show 28% improvement in the energy compared to a low power CMOS hardware implementation based on stochastic circuits. Furthermore, our design occupies up to 5x less area., Comment: This paper was submitted to IEEE Transactions on Computer Aided design

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data retention and write-ability (both related to the energy barrier height of the magnet) makes design more challenging. Furthermore, the energy barrier height depends on the physical dimensions of the free layer. Any variations in the dimensions of the free layer lead to variations in the energy barrier height. In order to address poor reliability of STT-MRAMs, usage of Error Correcting Codes (ECC) have been proposed. Unlike traditional CMOS memory technologies, ECC is expected to correct both soft and hard errors in STT_MRAMs. To achieve acceptable yield with low write power, stronger ECC is required, resulting in increased number of encoded bits and degraded memory efficiency. In this paper, we propose Failure aware ECC (FaECC), which masks permanent faults while maintaining the same correction capability for soft errors without increased encoded bits. Furthermore, we investigate the impact of process variations on run-time reliability of STT-MRAMs. We provide an analysis on the impact of process variations on the life-time of the free layer and retention failures. In order to analyze the effectiveness of our methodology, we developed a cross-layer simulation framework that consists of device, circuit and array level analysis of STT-MRAM memory arrays. Our results show that using FaECC relaxes the requirements on the energy barrier height, which reduces the write energy and results in smaller access transistor size and memory array area. Keywords: STT-MRAM, reliability, Error Correcting Codes, ECC, magnetic memory, Comment: This paper will be published in ACM JETC journal

As CMOS nears the end of the projected scaling roadmap, significant effort has been devoted to the search for new materials and devices that can realize memory and logic. Spintronics, is one of the promising directions for the Post-CMOS era. While the potential of spintronic memories is relatively well known, realizing logic remains an open and critical challenge. All Spin Logic (ASL) is a recently proposed logic style that realizes Boolean logic using spin-transfer-torque (STT) devices based on the principle of non-local spin torque. ASL has advantages such as density, non-volatility, and low operating voltage. However, it also suffers from drawbacks such as low speed and static power dissipation. Recent work has shown that, in the context of simple arithmetic circuits (adders, multipliers), the efficiency of ASL can be greatly improved using techniques that utilize its unique characteristics. An evaluation of ASL across a broad range of circuits, considering the known optimization techniques, is an important next step in determining its viability. In this work, we propose a systematic methodology for the synthesis of ASL circuits. Our methodology performs various optimizations that benefit ASL, such as intra-cycle power gating, stacking of ASL nanomagnets, and fine-grained logic pipelining. We utilize the proposed methodology to evaluate the suitability of ASL implementations for a wide range of benchmarks viz. random combinational and sequential logic, digital signal processing circuits, and the Leon SPARC3 general-purpose processor. Based on our evaluation, we identify (i) the large current requirement of nanomagnets at fast switching speeds, (ii) the static power dissipation in the all-metallic devices, and (iii) the short spin flip length in interconnects as key bottlenecks that limit the competitiveness of ASL., Comment: This work has been accepted by the IEEE Transactions on Computer Aided Design