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Your search keyword '"Page, Matthew R."' showing total 19 results
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19 results on '"Page, Matthew R."'

7. Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance.

Author

Nemeth, Bill, Harvey, Steve P., Young, David L., Page, Matthew R., LaSalvia, Vincenzo, Findley, Dawn, Kale, Abhijit, Theingi, San, and Stradins, Paul

Subjects
SOLAR cells, ENVIRONMENTAL exposure, POLYCRYSTALLINE silicon, POLLUTANTS, PASSIVATION, TUNNEL design & construction
Abstract

Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells. [ABSTRACT FROM AUTHOR]

Published
2019
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8. Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells.

Author

Li, Jian V., Crandall, Richard S., Young, David L., Page, Matthew R., Iwaniczko, Eugene, and Wang, Qi

Subjects
HETEROSTRUCTURES, SILICON solar cells, INTERFACE circuits, HOLES (Electron deficiencies), ENERGY level densities, CAPACITANCE-voltage characteristics
Abstract

We use capacitance techniques to directly measure the Fermi level at the crystalline/amorphous interface in n-type silicon heterojunction solar cells. The hole density calculated from the Fermi level position and the inferred band-bending picture show strong inversion of (n)crystalline silicon at the interface at equilibrium. Bias dependent experiments show that the Fermi level is not pinned at the interface. Instead, it moves farther from and closer to the crystalline silicon valence band under a reverse and forward bias, respectively. Under a forward bias or illumination, the Fermi level at the interface moves closer to the crystalline silicon valence band thus increases the excess hole density and band bending at the interface. This band bending further removes majority electrons away from the interface leading to lower interface recombination and higher open-circuit voltage. [ABSTRACT FROM AUTHOR]

Published
2011
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19. Efficient black silicon solar cell with a density-graded nanoporous surface: Optical properties, performance limitations, and design rules.

Author

Hao-Chih Yuan, Yost, Vernon E., Page, Matthew R., Stradins, Paul, Meier, Daniel L., and Branz, Howard M.

Subjects
SOLAR cells, SILICON, SOLAR energy, PHOTOVOLTAIC cells, SOLAR radiation, WAVELENGTHS
Abstract

We study optical effects and factors limiting performance of our confirmed 16.8% efficiency “black silicon” solar cells. The cells incorporate density-graded nanoporous surface layers made by a one-step nanoparticle-catalyzed etch and reflect less than 3% of the solar spectrum, with no conventional antireflection coating. The cells are limited by recombination in the nanoporous layer which decreases short-wavelength spectral response. The optimum density-graded layer depth is then a compromise between reflectance reduction and recombination loss. Finally, we propose universal design rules for high-efficiency solar cells based on density-graded surfaces. [ABSTRACT FROM AUTHOR]

Published
2009
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