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This report presents testing of a prototype cantilevered liquid-nitrogen-cooled silicon mirror. This mirror was designed to be the first mirror for the new soft X-ray beamlines to be built as part of the Advanced Light Source Upgrade. Test activities focused on fracture, heat transfer, modal response and distortion, and indicated that the mirror functions as intended.

K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method have been found to have excellent quantum efficiency (QE) and outstanding near-atomic surface smoothness and have been employed in the VHF gun in the Advanced Photoinjector Experiment (APEX), however, their robustness in terms of their lifetime at elevated photocathode temperature has not yet been investigated. In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathode temperature has been investigated. The origin of the significant QE degradation at photocathode temperatures over 70 °C has been identified as the loss of cesium atoms from the K-Cs-Sb photocathode, based on the in situ x-ray analysis on the photocathode film during the decay process. The findings from this work will not only further the understanding of the behavior of K-Cs-Sb photocathodes at elevated temperature and help develop more temperature-robust cathodes, but also will become an important guide to the design and operation of the future high-field rf guns employing the use of such photocathodes.

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. In this paper, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K2CsSb sputter target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K2CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ∼40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s-1. The final K2CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K3Sb and finally to K2CsSb.

We demonstrate a method for obtaining increased spatial resolution and specificity in nanoscale chemical composition maps through the use of full refractive reference spectra in soft x-ray spectro-microscopy. Using soft x-ray ptychography, we measure both the absorption and refraction of x-rays through pristine reference materials as a function of photon energy and use these reference spectra as the basis for decomposing spatially resolved spectra from a heterogeneous sample, thereby quantifying the composition at high resolution. While conventional instruments are limited to absorption contrast, our novel refraction based method takes advantage of the strongly energy dependent scattering cross-section and can see nearly five-fold improved spatial resolution on resonance.

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. We calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K2CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

Improvements in brightness and coherent flux of about two orders of magnitude over operational storage ring based light sources are possible using multi bend achromat lattice designs [1]. These improvements can be implemented as upgrades of existing facilities, like the proposed upgrade of the Advanced Light Source, making use of the existing infrastructure, thereby reducing cost and time needed to reach full scientific productivity on a large number of beamlines. An R&D program was started at LBNL to further develop the technologies necessary for diffraction-limited storage rings. It involves many areas, and focuses on the specific needs of soft x-ray facilities [2]: NEG coating of small chambers, swap-out injection, bunch lengthening, magnets/radiation production, x-ray optics, and beam physics design optimization. Hardware prototypes have been built and concepts and equipment was tested in beam tests on the existing ALS.

The fabrication and installation at the Lawrence Berkeley National Laboratory of a high-brightness high-repetition rate photo-gun, based on a normal conducting 187 MHz (VHF) RF cavity operating in CW mode, is in an advanced phase. The cavity will generate an electric field at the cathode plane of ∼ 20 MV/m to accelerate the electron bunches up to ∼ 750 keV, with peak current, energy spread and transverse emittance suitable for FEL and ERL applications. The gun vacuum system has been designed for achieving pressures compatible with the use of "delicate" high quantum efficiency semiconductor cathodes to generate up to a nC bunches at MHz repetition rate with present laser technology. Several photo-cathode/laser systems are under consideration, and in particular photo-cathodes based on K2CsSb are being developed for the gun and have already achieved a QE of 8% at 532 nm wavelength, or close to 20% including the Schottky barrier lowering. The cathode will be operated by a μJ fiber laser in conjunction with refractive transverse beam shaping to create a flat top transverse profile, as well as a birefringent pulse stacker to create a flat top temporal profile. The present status and the plan for future activities are presented.

Stress/Strain fields associated with thin film buckling induced by compressive stresses orblistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

We present an initial feasibility summary of a femtosecond synchrotron radiation x-ray source based on a flat-beam rf gun and a recirculating superconducting linac that provides beam to an array of undulators and bend magnets. Optical pulse durations of

We describe a proposed femtosecond synchrotron radiation x-ray source based on a flat-beam RF gun and a recirculating superconducting linac that provides beam to an array of undulators and bend magnets. X-ray pulse durations of

Detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on the properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data. [ABSTRACT FROM AUTHOR]

We investigated the growth of Mo/Si multilayers (ML) deposited using a highly collimated flux of ion-beam sputtered particles for a wide range of deposition angles. Growth of the multilayers at normal and moderately inclined deposition is dominated by surface relaxation resulting in smooth interfaces of the multilayer stack. The first signs of interface roughening are observed at a deposition angle of 45° with respect to the normal to the substrate surface. At an oblique angle of 55°, the ML interfaces undergo fast progressive roughening from the substrate to the top of the ML stack, leading to the formation of ripples which are perpendicular to the deposition flux direction. Deposition of the multilayer at an angle of 65° results in a highly periodic lateral ripple structure with a period of 10 nm. The mature ripple pattern forms during growth of only the first few layers and then stabilizes. The ripples propagate through the whole ML stack with almost no changes in frequency and amplitude, resulting in a highly periodic bulk array composed of silicon and molybdenum nano-rods closely packed in a 6-fold symmetric lattice. We present a simple model for the ripple growth, which gives results that are in good agreement with experimental data. [ABSTRACT FROM AUTHOR]

Background spectrum coming from the photoelectron bremsstrahlung was computed using the Monte Carlo technique. The doubly differential electron bremsstrahlung cross sections obtained from the Born approximation modified by the Elwert factor and with the use of the form factor approach for screening were employed instead of empirical formulas. In addition to the bremstrahlung spectrum from the silicon wafer, the bremsstrahlung intensity that photoelectrons, which escape from the silicon wafer, produced in the filter attached to the detector was also computed based on the usual synchrotron radiation excited total reflection x-ray fluorescence experimental conditions.

A smart pixel detector is being developed for Time Resolved Crystallography for biological and material science applications. Using the Pixel Detector presented here, the Laue method will enable the study of the evolution of structural changes that occur within the protein as a function of time. The x-ray pixellated detector is assembled to the integrated circuit through a bump bonding process. Within a pixel size of 150x150[[[micro]meter].sup.2], a low noise preamplifier-shaper, a discriminator, a 3 bit counter and the readout logic are integrated. The read out, based on the Column Architecture principle, will accept hit rates above 5x[10.sup.8]/[cm.sup.2]/s with a maximum hit rate per pixel of 1MHz. This detector will allow time resolved Laue crystallography to be performed in a frameless operation mode, without dead time. Target specifications, architecture and preliminary results on the 8x8 front-end prototype and the column readout are presented.