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CuInS2 quantum dots have been studied in a broad range of applications, but despite this, the fine details of their charge carrier dynamics remain a subject of intense debate. Two of the most relevant points of discussion are the hole dynamics and the influence of Cu:In synthesis stoichiometry on them. It has been proposed that Cu-deficiency leads to the formation of Cu2+, affecting the localization of holes into Cu defects. Importantly, it is precisely these confined hole states which are used to explain the interesting photoluminescence properties of CuInS2 quantum dots. We use static X-ray spectroscopy to reveal no evidence for a measurable amount of native Cu2+ states in Cu-deficient samples. Instead, the improved properties of these samples are explained by an increase of crystallinity, reducing the concentration of mid gap states. Furthermore, to understand the charge carrier dynamics, herein we employ ultrafast optical transient absorption, and fluorescence up-conversion spectroscopies in combination with ultrafast X-ray absorption spectroscopy using a hard X-ray free electron laser. We demonstrate that in non-passivated samples, holes are transferred from Cu atoms in sub-picosecond timescales. We assign this transfer to occur towards the thiol-based ligands. Finally, we observe that Cu-deficient samples are more robust against the photothermal heating effects of using higher laser fluences. This is not the case for the stoichiometric sample, where heating effects on the structure are directly observed.

In its 60 years of existence, the field of nonlinear optics has gained momentum especially over the past two decades thanks to major breakthroughs in material science and technology. In this article, we present a new set of data tables listing nonlinear-optical properties for different material categories as reported in the literature since 2000. The papers included in the data tables are representative experimental works on bulk materials, solvents, 0D-1D-2D materials, metamaterials, fiber waveguiding materials, on-chip waveguiding materials, hybrid waveguiding systems, and materials suitable for nonlinear optics at THz frequencies. In addition to the data tables, we also provide best practices for performing and reporting nonlinear-optical experiments. These best practices underpin the selection process that was used for including papers in the tables. While the tables indeed show strong advancements in the field over the past two decades, we encourage the nonlinear-optics community to implement the identified best practices in future works. This will allow a more adequate comparison, interpretation and use of the published parameters, and as such further stimulate the overall progress in nonlinear-optical science and applications., Comment: 209 pages, 8 figures, 14 tables. Journal of Physics:Photonics (2023)

We present the design, implementation, and illustrative results of a light collection/injection strategy based on an off-axis parabolic mirror collector for a low-temperature Scanning Tunneling Microscope (STM). This device allows us to perform STM induced Light Emission (STM-LE) and Cathodoluminescence (STM-CL) experiments and in situ Photoluminescence (PL) and Raman spectroscopy as complementary techniques. Considering the \'Etendue conservation and using an off-axis parabolic mirror, it is possible to design a light collection and injection system that displays 72% of collection efficiency (considering the hemisphere above the sample surface) while maintaining high spectral resolution and minimizing signal loss. The performance of the STM is tested by atomically resolved images and scanning tunneling spectroscopy results on standard sample surfaces. The capabilities of our system are demonstrated by performing STM-LE on metallic surfaces and two-dimensional semiconducting samples, observing both plasmonic and excitonic emissions. In addition, we carried out in situ PL measurements on semiconducting monolayers and quantum dots and in situ Raman on graphite and hexagonal boron nitride (h-BN) samples. Additionally, STM-CL and PL were obtained on monolayer h-BN gathering luminescence spectra that are typically associated with intragap states related to carbon defects. The results show that the flexible and efficient light injection and collection device based on an off-axis parabolic mirror is a powerful tool to study several types of nanostructures with multiple spectroscopic techniques in correlation with their morphology at the atomic scale and electronic structure., Comment: 19 pages, 14 Figures

Perovskite nanoplatelets possess extremely narrow absorption and emission linewidths, which are crucial characteristics for many optical applications. However, their underlying intrinsic and extrinsic line-broadening mechanisms are poorly understood. Here, we apply multi-dimensional coherent spectroscopy to determine the homogeneous line-broadening of colloidal perovskite nanoplatelet ensembles. We demonstrate control of not only their intrinsic linewidths, but also control of various broadening mechanisms by tuning the platelet geometry. Remarkably, we find that decreasing nanoplatelet thickness by a single polyhedral layer results in a 2-fold reduction of the inhomogeneous linewidth and a 3-fold reduction of the intrinsic homogeneous linewidth to the sub-meV regime. In addition, our measurements suggest homogeneously broadened exciton resonances in 3-layer (but not necessarily 4-layer) nanoplatelets at room-temperature.

This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors., Comment: 20 pages

Advances in opto-electronics require the development of materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was discovered recently that, for cesium lead-halide perovskite NCs, their unusually efficient light-emission may be due to a unique excitonic fine-structure composed of three bright triplet states that minimally interact with a proximal dark singlet state. To study this fine-structure without isolating single NCs, we use multi-dimensional coherent spectroscopy at cryogenic temperatures to reveal coherences involving triplet states of a CsPbI$_3$ NC ensemble. Picosecond timescale dephasing times are measured for both triplet and inter-triplet coherences, from which we infer a unique exciton fine-structure level-ordering comprised of a dark state energetically positioned within the bright triplet manifold.

The band-gaps of CsPbI$_3$ perovskite nanocrystals are measured by absorption spectroscopy at cryogenic temperatures. Anomalous band-gap shifts are observed in CsPbI$_3$ nanocubes and nanoplatelets, which are modeled accurately by band-gap renormalization due to lattice vibrational modes. We find that decreasing dimensionality of the CsPbI$_3$ lattice in nanoplatelets greatly reduces electron-phonon coupling, and dominant out-of-plane quantum confinement results in a homogeneously broadened absorption lineshape down to cryogenic temperatures. An absorption tail forms at low-temperatures in CsPbI$_3$ nanocubes, which we attribute to shallow defect states positioned near the valence band-edge.

Coupling to phonon modes is a primary mechanism of excitonic dephasing and energy loss in semiconductors. However, low-energy phonons in colloidal quantum dots and their coupling to excitons are poorly understood, since their experimental signatures are weak and usually obscured by unavoidable inhomogeneous broadening of colloidal dot ensembles. We use multi-dimensional coherent spectroscopy at cryogenic temperatures to extract the homogeneous nonlinear optical response of excitons in a CdSe/CdZnS core/shell colloidal quantum dot ensemble. Comparison to simulation provides evidence that the observed lineshapes arise from the co-existence of confined and delocalized vibrational modes, both of which couple strongly to excitons in CdSe/CdZnS colloidal quantum dots.

Previous single-particle spectroscopic studies of colloidal quantum dots have indicated a significant spread in biexciton lifetimes across an ensemble of nominally identical nanocrystals. It has been speculated that in addition to dot-to-dot variation in physical dimensions, this spread is contributed to by variations in the structure of the quantum dot interface, which controls the shape of the confinement potential. Here we directly evaluate the effect of the composition of the core-shell interface on single- and multi-exciton dynamics via side-by-side measurements of individual core-shell CdSe-CdS nanocrystals with a sharp vs. smooth (graded) interface. To realize the latter type of structures, we incorporate a CdSexS1-x alloy layer of controlled composition and thickness between the CdSe core and the CdS shell. We observe that while having essentially no effect on single-exciton decay, the interfacial alloy layer leads to a systematic increase in biexciton lifetimes. This observation provides direct experimental evidence that in addition to the size of the quantum dot, its interfacial properties also significantly affect the rate of Auger recombination, which governs biexciton decay. These findings help rationalize previous observations of a significant heterogeneity in the biexciton lifetimes across similarly sized quantum dots and should facilitate the development of Auger-recombination-free colloidal nanostructures for a range of applications from lasers and light-emitting diodes to photodetectors and solar cells., Comment: This paper has been withdrawn by the author due to insufficient experimental data

A growing interest in colloidal quantum dot (QD) based light-emitting diodes (QD-LEDs) has been motivated by the exceptional color purity and spectral tunability of QD emission as well as the amenability of QD materials to highly scalable and inexpensive solution processing. One current challenge in the QD-LED field has been a still incomplete understanding of the role of extrinsic factors (e.g., recombination via QD surface defects) versus intrinsic processes such as multicarrier Auger recombination or electron-hole separation due to applied electric field in defining device efficiency. Here, we address this problem with a study of excited-state dynamics in a series of structurally engineered QDs, which is performed in parallel with characterization of their performance upon incorporation into LEDs. The results of this study indicate that under both zero and forward bias, a significant fraction of the QDs within the active emitting layer is negatively charged and therefore, Auger recombination represents an important factor limiting the efficiency of these devices. We further observe that the onset of the LED efficiency roll-off is also controlled by Auger recombination and can be shifted to higher currents by using newly developed QDs with an intermediate alloy layer at the core-shell interface introduced for suppression of Auger decay. Our findings suggest that further improvement in the performance of QD-LEDs can be achieved by developing effective approaches for controlling Auger recombination and/or minimizing the effects of QD charging via improved balancing of electron and hole injection currents., Comment: This paper has been withdrawn by the author due to a crucial sign error in equation 1

Using an analytical expression for an integral involving Bessel and Legendre functions we succeeded to obtain the partial wave decomposition of a general optical beam at an arbitrary location from the origin. We also showed that the solid angle integration will eliminate the radial dependence of the expansion coefficients. The beam shape coefficients obtained are given by an exact expression in terms of single or double integrals. These integrals can be evaluated numerically in a short time scale. We presented the results for the case of linear polarized Gaussian beam., Comment: 11 pages, 4 figures

When treating problems of vector diffraction in electromagnetic theory, the evaluation of the integral involving Bessel and associated Legendre functions is necessary. Here we present the analytical result for this integral that will make unnecessary numerical quadrature techniques or localized approximations. The solution is presented using the properties of the Bessel and associated Legendre functions., Comment: 4 pages