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2. Poster abstracts

3. High-performance 15-V novel LDMOS transistor architecture in a 0.25-[micro]m BiCMOS process for RF-power applications

4. A transmitter architecture for nonconstant envelope modulation

6. 59-71GHz Wideband MMIC Balanced Power Amplifier in a 0.13um SiGe Technology

8. High Performance 15-V Novel LDMOS Transistor Architecture in a 0.25µm BiCMOS Process for RF Power Applications

9. The locus of points of constant output VSWR around the load optimal impedance: evaluation of power transistors robustness

10. New transmitter architecture for nonconstant envelope modulation

11. Power Transistor Electrical Behavior

38. High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25-µm BiCMOS Process for RF-Power Applications.

45. 79GHz BiCMOS single-ended and differential power amplifiers

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