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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology., 20 pages, 6 figures

The last missing piece of puzzle for the full functionalization of group IV optoelectronic devices is the direct band gap semiconductor made by CMOS compatible technology. Here we report on the fabrication of GeSn alloys with a Sn concentration of up to 6 % using ion implantation followed by ms-range explosive solid phase epitaxy. The n-type single crystalline GeSn alloys are made by co-doping of Sn and P into Ge. Both the activation of P and the formation of GeSn are performed during a single-step flash lamp annealing for 3 ms. The band gap engineering in ultra-doped n-type Ge and GeSn alloys is theoretically predicted by density functional theory and experimentally verified using ellipsometric spectroscopy. We demonstrate that both the diffusion and the segregation of Sn and P atoms in Ge are fully supressed by ms-range non-equilibrium thermal processing.

Most of modern electronics manufacturing is based on silicon. But because of its indirect energy band gap silicon cannot be used as an efficient light source. Therefore from economical and technological points of view it is important to find light sources than can be integrated into Si technology. One of the possible solutions is to integrate AIII-BV semiconductor nanocrystals inside Si-based matrices. For synthesis of such structures sequential ion implantation and annealing techniques can be used.In this work As+ + In+and As+ + Ga+ions were implanted into SiO2(100nm)/Si. Flash Lamp Annealing (FLA) in the ms range with preheating was employed within a wide range of annealing parameters such as temperature and time. In that way different sizes of InAs and GaAs nanocrystals were obtained. To investigate optical properties of InAs and GaAs structures we used lowtemperature photoluminescence (PL) and micro-Raman spectroscopic techniques including 2D mapping. PL spectra were obtained in a temperature range from 10K up to RT. Raman spectroscopy was performed at room temperature. The Raman spectra confirms very good quality of InAs and GaAs crystals, and deconvoluted PL spectra give interesting information about expected quantum size effect - related blue shift and nanocrystals sizes.

The incorporation of different functional optoelectronic elements on a single chip enables performance progress, which can overcome the downsizing limit in silicon technology. For example, the use of Ge instead of silicon as a basic material in nanoelectronics would enable faster chips containing smaller transistors. In order to improve the device performance and fully exploit the unique properties of germanium, the germanium on insulator (GeOI) structure using the ultrathin body (UTB) GeOI architecture with an active doping concentration above 6×1019 cm-3 has to be explored. Here we present a new concept for the development, optimisation and fabrication of high-mobility channel materials based on Ge using plasma enhanced chemical vapour deposition of Ge and its recrystallization via millisecond range lateral explosive epitaxy. It is shown that the mechanism of explosive recrystallization (solid vs liquid) can be controlled by Sn co-doping and/or varying the annealing time. An influence of the explosive recrystallization and co-doping of Sn on the dopant activation efficiency and the carrier distribution in the ultra-thin GeOI and Ge NWs after millisecond range flash lamp annealing is discussed. Finally, the nanowire FETs will be presented. - See more at: http://www.european-mrs.com/2015-spring-symposium-z-european-materials-research-society#sthash.fI9UKy1b.dpuf

The downscaling and stressor technology of Si based devices are extending the performance of the silicon channel to its limits. One promising solution for the performance progress which can overcome those limits is the integration of different functional optoelectronic elements within one chip. We have developed a compact, CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. The III-V nanostructured semiconductors are synthesized in silicon based matrixes using the combination of ion beam implantation and millisecond flash lamp annealing (FLA) techniques via millisecond range liquid phase epitaxy [1, 2]. In this paper we will present investigations of the microstructural, optical and electrical properties of InAs and InP nanostructures formed in silicon and on SOI wafers. The growth evolution of the III-V nanostructures during FLA and the influence of the annealing parameters on their crystallographic orientation, shape and size will be explored. Conventional selective etching was used to form the n-III-V/p-Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation between n-type III-V quantum dots and p-type Si. The main advantage of our method is its integration with large-scale silicon technology, which also allows its application for the fabrication of Si-based optoelectronic devices.

In this work an enhancement of the blue and green electroluminescence (EL) related to silicon inclusions into SiO2 layer by gadolinium co-doping was investigated. The blue (460 nm) and green (550 nm) EL corresponds to the oxygen-deficient-centres (ODC) and Si nanoclusters with average diameter below 1 nm, respectively. After gadolinium co-doping a fourfold increase of the total EL intensity was observed. It was found that the increase of the blue and green EL is due to the energy transfer from Gd3+ ions to the ODC defects and amorphous silicon nanoclusters. Moreover, the gadolinium co-doping increases the concentration of the small silicon nanoclusters.

Semiconductors quantum dots of the size in the range of the exciton Bohr radius or smaller are very attractive objects, both for research and application, due to their special optical and electrical properties. In this paper we present investigations of microstructural, electrical and optical properties of GaAs quantum dots (QDs) formed in silicon. The GaAs QDs were obtained by means of sequential ion implantation and flash lamp annealing (FLA). It is shown that the crystallographic orientation of nanocrystals (NCs) and their size can be controlled by varying the annealing parameters. Besides the crystallographic orientation the conductivity type of the GaAs NCs can be controlled as well. The influence of the post implantation millisecond-range annealing on the evolution of the nanoparticles size, shape, crystallographic orientation and doping type of GaAs QDs is discussed.

Conventionally, the integration of III-V semiconductors with silicon is based on heteroepitaxial growth of multi-layered structures on silicon. But up to now the modification of the optoelectronic properties of silicon in the microelectronic industry is based on the ion implantation method and subsequent thermal annealing. An alternative technique to the epitaxial growth of III-V nanostructures is the high fluence ion implantation followed by milliseconds range annealing. Potentially, with this method any kind of compound semiconductors can be formed in any solid substrate. InP and GaAs with a bulk band gap of 1.34 and 1.42 eV at room temperature, respectively, are most suitable for near infrared light emitters, and InAs (0.35 eV) with an extremely high electron mobility (up to 40000 cm2/Vs) seems to be the most suitable candidate for better electronic devices performance. In this paper formation of the InAs, GaAs and InP nanocrystals in silicon are presented. The optoelectronic and microstructural properties of the compound semiconductors nanostructures were investigated by means of -Raman and temperature dependent photoluminescence spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectroscopy (EDS). It is show that conductivity type, size and crystallographic orientation of the III-V nanostructures can be fully controlled by varying implantation and annealing parameters. Finally the heterojunction devices consisting of III-V NCs on a silicon finger realized by selective etching of silicon will be presented.

The In(As, N) quantum structures were formed in silicon, SiO2 and Si3N4 films by sequential ion implantation and subsequent thermal annealing. Samples were characterized by -Raman spectroscopy, Rutherford backscattering spectrometry (RBS), low temperature photoluminescence (PL), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Two kinds of crystalline InAs nanostructures were successfully synthesized: quantum dots (QDs) and nanopyramides (NPs). The Raman spectrum shows two peaks at 215 and 235 cm-1 corresponding to the transverse optical (TO) and longitudinal optical (LO) InAs phonon modes, respectively. The narrow PL band at around 1.3 m from the InAs QDs with an average diameter 7.5 ± 0.5 nm was observed. The InAs NPs were found only in samples annealed for 20 ms at temperature range from 1000 up to 1200 oC. The crystallinity and pyramidal shape of InAs quantum structures were confirmed by high resolution transmission electron microscopy (HRTEM) (see Fig. 1) and X-ray diffraction (XRD). The average size of the NPs is 50 nm base and 50 nm high and they are oriented parallel to the Si (001) planes. The InAs nanopyramids grow in silicon due to liquid phase epitaxy. The InN crystals are formed on the top of silicon nitride layer due to outdiffusion of indium and in Si3N4 film. The PL measurements shows narrow band at around 1.35 m originated from hexagonal InN nanocrystals due to quantum confinement size effect. -Raman scattering study shows two peaks at 495 and 588 cm-1, which correspond to (TO) of E2h and (LO) of A1 phonon modes, respectively.

When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (peroxy radicals POR, oxygen deficient centres ODC, non-bridging oxygen hole centres NBOHC, E’-centres, etc.). The intensity of the electroluminescence from oxygen deficiency centres at 2.7 eV, non-bridging oxygen hole centres at 1.9 eV and defect centres with emission at 2.07 eV can be easily modified by the ion implantation of the different elements (H, N, O) into the full processed MOSLED structure. Nitrogen implanted into the SiO2:Gd layer reduces the concentration of the ODC and NBOHC while the doping of the oxygen increases the EL intensity observed from POR defect and NBOHC. Moreover, after oxygen or hydrogen implantation into the SiO2:Ge structure fourfold or fifth fold increase of the germanium related EL intensity was observed.