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The Super Tau-Charm Facility (STCF) is a significant initiative for accelerator-based particle physics in China. Electromagnetic Calorimeter (ECAL) is one of the important detectors of STCF, which is tasked with the accurate measurement of photons. STCF ECAL employs pure Cesium iodide (pCsI) as its scintillation crystal and uses a large-area avalanche photodiode (APD) as a photoelectric conversion device. High luminosity of STCF results in significant background levels, leading to pileups challenging conventional signal processing. In this paper, a pile-up correction algorithm called “pipeline optimal filtering” is proposed, and a background simulation platform is built to verify the measurement effect of the algorithm on energy and time. [ABSTRACT FROM AUTHOR]

Electron beam lithography (EBL) involves the transfer of a pattern onto the surface of a substrate by first scanning a thin layer of organic film (called resist) on the surface by a tightly focused and precisely controlled electron beam (exposure) and then selectively removing the exposed or nonexposed regions of the resist in a solvent (developing). It is widely used for fabrication of integrated circuits, mask manufacturing, photoelectric device processing, and other fields. The key to drawing circular patterns by EBL is the graphics production and control. In an EBL system, an embedded processor calculates and generates the trajectory coordinates for movement of the electron beam, and outputs the corresponding voltage signal through a digital-to-analog converter (DAC) to control a deflector that changes the position of the electron beam. Through this procedure, it is possible to guarantee the accuracy and real-time control of electron beam scanning deflection. Existing EBL systems mostly use the method of polygonal approximation to expose circles. A circle is divided into several polygons, and the smaller the segmentation, the higher is the precision of the splicing circle. However, owing to the need to generate and scan each polygon separately, an increase in the number of segments will lead to a decrease in the overall lithography speed. In this paper, based on Bresenham's circle algorithm and exploiting the capabilities of a field-programmable gate array and DAC, an improved real-time circle-producing algorithm is designed for EBL. The algorithm can directly generate circular graphics coordinates such as those for a single circle, solid circle, solid ring, or concentric ring, and is able to effectively realizes deflection and scanning of the electron beam for circular graphics lithography. Compared with the polygonal approximation method, the improved algorithm exhibits improved precision and speed. At the same time, the point generation strategy is optimized to solve the blank pixel and pseudo-pixel problems that arise with Bresenham's circle algorithm. A complete electron beam deflection system is established to carry out lithography experiments, the results of which show that the error between the exposure results and the preset patterns is at the nanometer level, indicating that the improved algorithm meets the requirements for real-time control and high precision of EBL. HIGHLIGHTS: • To improve the accuracy and speed of production of circular patterns in electron beam lithography, a method of directly exposing circular patterns by controlling the electron beam is proposed, in which the trajectory coordinates of the beam are generated in real time without image stitching. • Bresenham's circle algorithm encounters two problems in circle production: blank pixels will appear when solid circles are generated, and pseudo-pixels occur when a circle of a specific radius is generated. In this paper, Bresenham's algorithm is optimized and improved to solve these two problems, and the effectiveness of the improved algorithm is demonstrated by simulation and experiment. • Experimental results show that the proposed method can effectively control electron beam photolithography of single-line-wide circles, solid circles, solid rings, concentric circles, etc. The error between the lithography results and the preset parameters is at the nanometer level. [ABSTRACT FROM AUTHOR]

The morphology of the photoactive layer plays an important role in both the photoelectric effect and device performance of solution‐processed organic solar cells (OSCs). Optimizing the morphology requires precise control over the complex film formation kinetics, which are influenced by a range of factors from the solution state to the solid‐film state. This review delves into the in situ characterization technologies employed to understand the active layer formation process and explores strategies for controlling film formation during key stages, including solution aggregation, nucleation, crystal growth, and phase separation. Special attention is given to the mechanism by which these strategies enable real‐time morphology control during the printing process and their potential to facilitate direct printing of active layers with optimized morphology. The goal is to offer valuable insights and guidance for managing film formation kinetics in solution‐processed OSCs, ultimately addressing the challenges of real‐time morphology control in scale‐up printing and paving the way for high‐throughput production of post‐processing‐free devices. [ABSTRACT FROM AUTHOR]

Indium‐based transparent conductive oxide (TCO) films are widely used in various photoelectric devices including silicon heterojunction (SHJ) solar cells. However, high cost of indium‐based TCO films is not conducive to mass production of the SHJ solar cells. A variety of indium‐free or indium‐less TCOs are explored and utilized presently. Here, SnOx films are deposited by reactive plasma deposition (RPD) with metal tin as the evaporation source. The metal‐reaction deposited SnOx films feature low resistivity (<2 × 10−3 Ω cm), high mobility (35.93 cm2 V−1 S−1), and wide optical bandgap (3.64 eV). A power conversion efficiency (PCE) of 25.33% is achieved on the champion SHJ solar cell using the metal‐reaction deposited SnOx as the back TCO layer, which indicates the application potential of the metal‐reaction‐deposited SnOx as a low‐cost substitute for In‐based TCOs in SHJ solar cells and other photoelectric devices. [ABSTRACT FROM AUTHOR]

Ferroelectric photoelectric devices show promising applications in artificial vision systems. However, this type of devices used in artificial vision systems exhibits low photoresponsivity and this limited cyclability of photocurrents, which hinders the progress of artificial vision systems. In this study, an artificial vision system is constructed with high photoresponsivity, fast photoresponse speed, and high read/write speed based on the Pd/PbZr0.4Ti0.6O3/La0.3Sr0.7MnO3/LaAlO3 ferroelectric photomemristor. The high optical response (18.86 nanoamperes) and read/write speeds (50 nanoseconds) of the device significantly improve the robustness and speed of the neuromorphic visual system while reducing power consumption for recognition. The artificial vision system developed in this study provides excellent real‐time image processing capabilities, including edge detection and classification with 100% accuracy for musical key patterns, and it is expected to offer great potential for the development of high‐performance self‐powered artificial vision systems. [ABSTRACT FROM AUTHOR]

Lead‐free halide perovskites possess excellent photoelectric properties, making them widely used in the photoelectric fields. Herein, lead‐free double perovskite crystals (PCs) doped with manganese (Cs2NaInCl6:Mn2+) are successfully prepared by the more energy‐efficient crystallization method. The crystals emit bright orange‐red light under the ultraviolet (UV) lamp, showing unique optical properties. They have the highest photoluminescence quantum yield of 42.91%. The white light‐emitting diodes (LEDs) are fabricated using these perovskite crystals, which show a color rendering index of 92 and external quantum efficiency (EQE) as high as 16.3%. Furtherly, perovskite‐modified fiber paper made of aramid chopped fibers (ACFs) and polyphenylene sulfide (PPS) exhibited fluorescent properties under different conditions. This paper combines fiber composite technology with PPS fiber filter bags, which are widely used in environmental protection, for the first time and demonstrates functional fiber filter bags with fluorescent characteristics. This filter bag provides an idea for the automatic detection of industrial filtration. Meanwhile, after being exposed to industrial waste gas for 60 h, the filter bag can maintain superior fluorescence performance. In this study, lead‐free double perovskites are synthesized using an efficient method for preparing high‐performance LEDs and high‐stability fluorescent fibers. Concurrently, the application of perovskites in environmental protection is expanded. [ABSTRACT FROM AUTHOR]

Organic solar cells (OSCs) achieved performance booming benefiting from the emerging of non‐fullerene acceptors, while inadequate device stability hampers their further application. At present, the prevalent belief attributes the inevitable thermal degradation of OSC device to morphological instability caused by excessive phase separation and crystallization in the active layer during device operation. However, it is inapplicable for state‐of‐art Y6‐based devices which strongly degrade before large‐scale morphology change. Herein, an alternative degradation mechanism is elucidated wherein molecular orientation change and demixing induced performance degradation in Y6‐based devices. Distinct from IT‐4F‐based counterpart, Y6‐based devices suffer severe thermal degradation dominated by open‐circuit voltage (VOC) and fill factor (FF) losses. The VOC loss is attributed to molecular orientation transition of polymer donors from edge‐on to face‐on, leading to a strong built‐in potential reduction and increase in non‐radiative loss due to energy level shifting. As for FF decay, discontinuous acceptor phases result in electron mobility decrease by over orders of magnitude, originating from the increased molecular stacking and phase separation. This work reveals the thermal degradation mechanism for Y6‐based devices and correlates the photoelectric properties with morphology instability, which will offer guidance for improving the stability of high‐performance OSCs. [ABSTRACT FROM AUTHOR]

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3 heterojunction improves the energy level arrangement, and CsPbBr3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3 heterojunction PD is 11.98 A W−1, the specific detectivity (D *) is 6.98 × 1011 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices. [ABSTRACT FROM AUTHOR]

Two‐dimensional (2D) intrinsic vacancy semiconductors possess great application prospects in optoelectronics fields, originating from abundant intrinsic vacancy structures and exceptional physical properties. Understanding the structure‐activity relationship between vacancies and physical/photoelectric properties is significant for building advanced photoelectric devices. However, limited by the increasing instability of 2D structure induced by intrinsic vacancies, the precise synthesis of 2D intrinsic vacancy semiconductors faces great challenges. Here, high‐quality 2D intrinsic vacancy semiconductor α‐Ga2Se3 is synthesized via low‐pressure and space‐confined physical vapor deposition. The vacancy structures induce an intermediate energy level and a super‐bandgap photoluminescence (PL) peak, which are verified by temperature‐dependent PL spectra. Furthermore, the vacancy energy level favorably endows 2D α‐Ga2Se3‐based photodetector with a UV‐vis‐NIR super‐bandgap photoresponse, excellent ultraviolet detection ability (photoresponsivity (41.86 A W−1), epitaxial quantum efficiency (1.42 × 104%), and detectivity (6.69 × 1011 Jones) @365 nm), fast photoresponse (20 ms), and superior photocurrent‐light power‐fitting factors. In addition, 2D α‐Ga2Se3‐based phototransistor displays p‐type transport behavior with a responsivity of 105 A W−1@365 nm at a gate voltage of −40 V. This work suggests a bright future of 2D intrinsic vacancy semiconductors in tailoring physical properties and enabling sophisticated device functionality. [ABSTRACT FROM AUTHOR]

New energy sources such as solar energy have been developed and utilized due to the shortage of non-renewable energy, and photoelectric materials have attracted more attention, accordingly. Moreover, flexible optoelectronic devices are crucial in the fields of wearable artificial intelligence, portable energy, and smart medical care. At present, photoelectric devices based on traditional perovskite cobalt oxide rigid films have problems such as inability to bend and deformation, which limits their application environment. Here, natural mica with atomically flat surface, high thermal stability, high transparency and good mechanical flexibility was selected as the substrate for preparing a series of LaCoO 3 flexible photoelectric films. These films exhibit excellent photoelectric properties and flexible properties. More importantly, the flexible film still has fast response speed and reproducible light response after 500 bending cycles. It reveals that all-inorganic perovskite LaCoO 3 is a promising candidate for designing high-performance, flexible and wearable optoelectronic devices. [Display omitted] [ABSTRACT FROM AUTHOR]

The widespread use of tin dioxide (SnO2) thin films as electron transport layer (ETL) of perovskite solar cells (PSCs) has been facilitated by commercial SnO2 nanocolloid dispersion. Nevertheless, challenges such as nanoparticle agglomeration have emerged, impacting film quality and interface properties critical for PSC performance. Herein, the efficacy of sequential, multistep spin‐coating of repeatedly diluted SnO2 aqueous suspension as a simple and effective approach to enhance ETL properties is explored. Through systematic experiments using dynamic light scattering, cyclic voltammetry, optical spectroscopy, and photoconductivity, it is demonstrated that the sequential deposition significantly improves the flatness and coverage of SnO2, leading to improved electron transport and transfer from a perovskite layer. Such a synergetic effect enables to fabricate lead iodide PSC (FAPbI3, FA: formamidinium) with a power conversion efficiency of 22.99% compared to 20.48% for the conventional 1‐step SnO2 layer. The findings underscore the potential of sequential SnO2 deposition as a promising technique for robust SnO2 films of photoelectric conversion devices. [ABSTRACT FROM AUTHOR]

In this paper, a physics-based ANN assisting method for extracting transient properties of extrinsically triggering photoconductive semiconductor switches (ET-PCSSs) is proposed. It exploits the nonlinear mapping of ANN between transient current (input) and doping concentration (output). According to the basic laws of photoelectric device operating, two types of ANN models are constructed by gaussian and polynomial fitting. The mean absolute error (MAE) of forecasting transient photocurrent can be less than 10 A under low triggering optical powers, which verifies the feasibility of ANN assisting TCAD applied to PCSSs. The results are comparable to computation by Mixed-Mode simulation, yet even thousands of seconds of CPU runtime cost are saved in every period. To improve the robustness of the Poly-ANN predictor, Bayesian optimization (BO) is implemented for minimizing the curl deviation of photocurrent-time curves. [ABSTRACT FROM AUTHOR]

High-performance alloy thin films and large-sized thin film wafers for infrared applications are the focus of international researchers. In this study, doped Ge1−xSnx and Ge1−yBiy semiconductor alloy films were grown on a 5-in. silicon (Si) wafer using high-quality Ge films as buffer layers. An efficient technique is presented to reduce the dark current density of near-infrared photoelectric devices. By using boron for p-type doping in Ge1−xSnx films and bismuth (Bi) for n-type doping in Ge1−yBiy films, an all-thin film planar nano-p-i-n optoelectronic device with the structure n-Ge1−yBiy/i-GeSn/p-Ge1−xSnx/Ge buffer/Si substrate has been successfully fabricated. The photoelectric performance of the device was tested, and it was found that the insertion of p-Ge1−xSnx/Ge films reduced the dark current density by 1–2 orders of magnitude. The maximum photoresponsivity reached up to 0.8 A/W, and the infrared photocurrent density ranged from 904 to 935 μA/cm2 under a +1 V bias voltage. Furthermore, the device is capable of modulating a terahertz wave using a voltage signal with a modulation bandwidth of 1.2 THz and a modulation depth of ∼83%, while the modulation rate is 0.5 MHz. This not only provides a clear demonstration of how doped alloy films and the development of nano-p-i-n heterojunctions will improve photoelectric devices' performance in the near-infrared and terahertz bands, but it also raises the possibility of optoelectronic interconnection applications being achieved through a single device. [ABSTRACT FROM AUTHOR]

Gallium oxide (β-Ga2O3) is a well-known extra-wide bandgap semiconductor and one of the promising materials used for power photoelectric devices, gas sensors, catalytic agents, etc. This work presents the suppression of self-trapped holes (STHs) and increase of oxygen vacancies (VO) in β-Ga2O3 microspindles by doping of Zn ions as well as the electrocatalytic activity of these microspindles. Undoped and Zn-doped β-Ga2O3 microspindles were prepared by a hydrothermal method followed by high-temperature calcination. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) results show that the morphology and structure of the samples did not change after low dose of Zn doping. The analyses of temperature-dependent photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) indicate that incorporation of divalent Zn ions as deep acceptors can increase VO concentration and effectively suppress the formation of STHs. Enhanced electrocatalytic activity was observed in Zn-doped β-Ga2O3 microspindles compared with undoped β-Ga2O3 microspindles. The new active sites introduced by Zn doping, higher VO concentration, and suppressed STHs are believed to be responsible for the enhanced electrocatalytic performance of Zn-doped β-Ga2O3 microspindles. This work is expected to expand the application of β-Ga2O3 based microstructures in electrocatalysis and provide innovative ideas for energy and environmental issues. [ABSTRACT FROM AUTHOR]

The polycrystalline perovskite films treated with solutions inevitably are subjected to high‐density crystal defects, significantly affecting the performance and stability of perovskite‐based photodetectors. In this research, a reasonably designed organic small molecule using piperazine iodide (PI) as an additive is employed to modify the perovskite films. The results indicate that this designed molecule not only improves the crystallinity of the perovskite film but also effectively passivates defects by modifying the local electron density. Consequently, recombination of non‐radiation charges is inhibited, improving the optoelectronic performance and stability of the device. The modified flexible photoelectric device exhibits a responsivity of 3.07 mA W−1 under 405 nm laser illumination. Notably, it maintains a high responsivity even after 7000 bending cycles. Furthermore, generality of the strategy is verified by applying it to various types of two‐dimensional organic–inorganic hybrid perovskite. Additionally, another small molecular amine phthalimide (PTM) is selected as an additive to further verify the universality of this strategy, which reveals that it demonstrates the same passivation as PI. This strategy provides a novel idea for defect passivation of two‐dimensional organic–inorganic hybrid perovskite, signifying a practical application significance for developing flexible wearable devices with optimized performance, perovskite light‐emitting diodes, and solar cells. [ABSTRACT FROM AUTHOR]

AbstractIn this study, Ti2O3 thin films were successfully produced using magnetron sputtering. Through orthogonal gradient experiments, the impact of substrate temperature, sputtering vacuum, RF power, and sputtering duration on surface morphology, roughness, physical structure, and resistivity was investigated. Various analytical techniques were employed, including AFM and SEM for surface morphology observation, XRD and Raman for qualitative physical structure analysis, XPS for elemental valence examination, and the four‐probe method for resistivity measurements. The study identified optimal growth conditions for Ti2O3 films, demonstrating a low resistivity of 2.66 × 10−3 Ω cm under the following conditions: RF power of 200 W, sputtering vacuum of .6 Pa, substrate temperature of 600°C, and sputtering duration of 60 min. Additionally, the sensor arrays were efficiently fabricated using the Lift‐off method to evaluate the photoelectric performance of the films. A light responsiveness of approximately 6 µA/W was observed in the device when illuminated with 950 nm light for 10 s. This finding carries important implications for the use of Ti2O3 thin films in future photoelectric devices. [ABSTRACT FROM AUTHOR]

We experimentally demonstrated that composites, being effective in optimizing the thermoelectric performance, can also enhance photothermoelectric effects in this work. In detail, we employed an alternating-growth in chemical-vapor-transport to grow the SnSe–SnSe2 composite crystals. The photo-responsivities of SnSe–SnSe2 (atomic-weight-ratio as 44%–56%) composite are comparable to SnSe crystals in the visible band (444 and 532 nm). However, the responsivities of SnSe–SnSe2 have remarkable 27.3% enhancement than those of SnSe crystal at the near-infrared band (1310 and 1550 nm). Supported by optical spectroscopy and theoretical electronic band structure, the enhanced optical responsivity of SnSe–SnSe2 composites is due to the formation of P–N junctions at interfaces between SnSe and SnSe2, leading to more optical transition channels and corresponding optical absorptions in near-infrared band. Our work verifies that hetero-junction formed among constituent compounds in composites is effective in optimizing the photothermoelectric response of thermoelectric materials in certain electromagnetic bands, paving the way to develop photoelectric detection devices. [ABSTRACT FROM AUTHOR]

[Display omitted] • Janus membrane based on CsPbBr 3 QDs is first prepared via a parallel electrospinning. • CsPbBr 3 QDs as fluorescent emitter are first used to build multifunctional membrane. • Janus microfiber as building element ensures strong luminescence of CsPbBr 3 QDs. • The membrane can stabilize CsPbBr 3 QDs to achieve intense and steady fluorescence. • Membrane has green fluorescence and tunable magnetism and aeolotropic conductivity. Lead halide perovskite quantum dots (QDs) are promising semiconductors for next-generation photoelectric devices. However, the development of perovskite QDs-based multifunctional materials still needs to be addressed in order to further advance the application of perovskite QDs. Herein, a successful synthesis of Janus microfibers array Janus membrane (JMAJM) with up-down structure and multifunction of luminescence, magnetism and electroconductivity is firstly achieved based on CsPbBr 3 QDs through a parallel electrospinning. JMAJM comprises up-down two layers tightly bonded together. The up-layer of JMAJM is luminescence/magnetism Janus microfibers array (L/M-JMAJM) constructed by [CsPbBr 3 /polymethyl methacrylate (PMMA)]//[CoFe 2 O 4 /PMMA] Janus microfibers as building elements. The down-layer of JMAJM is luminescence/electroconductivity Janus microfibers array (L/E-JMAJM) fabricated by [CsPbBr 3 /PMMA]//[polyaniline (PANI)/PMMA] Janus microfibers as building elements. Two independent microcosmic regions are designed and realized in a Janus microfiber, confining luminescence with magnetic or conductive substances into their respective regions, thus minimizing adverse effects of other dark-colored functional substances on the fluorescence of CsPbBr 3 QDs. This peculiar Janus microfiber enables the effective separation and high integration of CsPbBr 3 QDs with other functional substances. The up-down structure of JMAJM ensures a high integration of luminescence, magnetism and conductivity. Meanwhile, JMAJM addresses the environmental instability of CsPbBr 3 QDs while simultaneously endows perovskite QDs-based materials with additional functions to realize multifunction. Under ultraviolet excitation, fluorescence characteristics of the CsPbBr 3 QDs in JMAJM are maintained, exhibiting a vibrant green emission at 517 nm. Meanwhile, JMAJM achieves a maximum saturation magnetization of 20.32 emu·g−1, high conductance of 10-2 S and aeolotropic electroconductivity degree of 107. The combination of micro-partition with macro-partition in JMAJM receives superior concurrent luminescence-magnetic-conductive multifunction. This work provides a novel idea and strategy for advancing perovskite QDs-based multifunctional materials. [ABSTRACT FROM AUTHOR]

Metal halide perovskites (MHPs) have excellent characteristics and present great potential in a broad range of applications such as solar cells, light‐emitting diodes, and photodetectors. However, the light stability of devices remains an unresolved issue and has received great research attention. Under light illumination, MHPs exhibit various anomalous phenomena, such as photoluminescence (PL) enhancement, defect curing, PL blinking, and phase segregation. These phenomena are commonly considered intimately correlated with the performance and stability of MHP devices. In recent years, significant efforts have been made experimentally and theoretically toward understanding the physical origins of these anomalous effects. However, most research focuses on negative effects while the positive effects are mostly ignored. Herein, the positive effects and the negative effects of light soaking in MHPs are systematically discussed with a classification of the correlated physical mechanisms by specifically focusing on variation occurring in timescale from second to hour, corresponding to the unique ionic–electronic interaction. This intends to provide a new insight into ion effects on excellent properties of perovskites, and deep physical understanding of charge‐carrier and ion dynamics in perovskite, and theoretical guidelines for the fabrication of high‐quality and stability perovskite‐based photovoltaic and photoelectric devices. [ABSTRACT FROM AUTHOR]

The interface of perovskite solar cells (PSCs) plays an important role in transferring and collecting charges. Interface defects are important factors affecting the efficiency and stability of PSCs. Here, the buried interface between SnO2 and the perovskite layer is bridged by two‐dimensional (2D) MBene, which improves charge transfer. MBene can deposit additional electrons on the surface of SnO2, passivate its surface defects and facilitate the charge collection. Moreover, the dipole moment formed at the interface increases the electron transfer ability in the PSCs. MBene also regulates the growth of perovskite crystals, improves the quality of perovskite films, and reduces its grain boundary defects. As a result, PSCs based on FA0.2MA0.8PbI3 and (FAPbI3)0.95(MAPbBr3)0.05 get the enhanced efficiencies of 22.34 % and 24.32 % with negligible hysteresis. Furthermore, the optimized device exhibits better stability. This work opens up the application of MBene materials in PSCs, reveals a deeper understanding of the mechanism behind using 2D materials as an interface modification layer, and shows opportunities for using MBene as potential material in photoelectric devices. [ABSTRACT FROM AUTHOR]

Sn-doped Ga2O3 thin films and metal–semiconductor–metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm−3, 1.60 × 10−4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W. [ABSTRACT FROM AUTHOR]

Perovskite single crystals have garnered significant interest in photodetector applications due to their exceptional optoelectronic properties. The outstanding crystalline quality of these materials further enhances their potential for efficient charge transport, making them promising candidates for next-generation photodetector devices. This article reports the synthesis of methyl ammonium lead bromide (MAPbBr3) perovskite single crystal (SC) via the inverse-temperature crystallization method. To further improve the performance of the photodetector, Zn-porphyrin (Zn-PP) was used as a passivating agent during the growth of SC. The optical characterization confirmed the enhancement of optical properties with Zn-PP passivation. On single-crystal surfaces, integrated photodetectors are fabricated, and their photodetection performances are evaluated. The results show that the single-crystalline photodetector passivated with 0.05% Zn-PP enhanced photodetection properties and rapid response speed. The photoelectric performance of the device, including its responsivity (R), external quantum efficiency (EQE), detective nature (D), and noise-equivalent power (NEP), showed an enhancement of the un-passivated devices. This development introduces a new potential to employ high-quality perovskite single-crystal-based devices for more advanced optoelectronics. [ABSTRACT FROM AUTHOR]

Phosphate plays a crucial role in microbial proliferation, and the regulation of the phosphate concentration can modulate the fermentation efficiency. In this study, based on Lambert–Beer's Law and the selective absorption characteristics of substances under light, a dual-light-type photoelectric colorimetric device for phosphate determination was designed. The device's main components, such as the excitation light path and incubation stations, were modeled and simulated. The primary performance of the instrument was verified, and comparative experiments with a UV-1780 spectrophotometer were conducted to validate its performance. The experimental results demonstrate that this device exhibits a high degree of linearity with an R2 value of 0.9956 and a repeatability of ≤1.72%. The average temperature rise rate at the incubation stations was measured at 0.44 °C/s, with a temperature uniformity ≤ ±0.1 °C (temperature set at 37.3 °C). Consistently observed trends in the measurement of 23 CHO cell suspensions using the UV-1780 spectrophotometer further validated the accuracy and reliability of the device's detection results. [ABSTRACT FROM AUTHOR]

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The utilization of perovskite quantum dots (PQDs) in photoelectric devices is indeed an area of intense research due to their advantageous properties such as tunability of visible light and efficient light emission. In this study, mixed CsPbI 3 and FAPbI 3 PQD dispersions were successfully employed for cation exchange to prepare red-color Cs 1−x FA x PbI 3 PQD with the photoluminescence (PL) wavelength from 689 nm (x = 0) to 778 nm (x = 1). It is also found that the aggregation of Cs 1−x FA x PbI 3 PQD films were strongly dependent on x. When x from 0 to 0.6, the holes in PQD thin films were gradually improved. On the opposite, when x > 0.6, the PQDs thin films returned more and more holes due to an excess of FA + cations. The resulting Cs 1-x FA x PbI 3 PQD based light-emitting diodes (LEDs) also demonstrated tunable emission wavelengths, and it is worth mentioning that the maximum external quantum efficiency (EQE) of 11.22 % was achieved with an emission wavelength of 758 nm when x = 0.6. [ABSTRACT FROM AUTHOR]

A novel polarization‐sensitive artificial optoelectronic synapse based on β‐Ga2O3 single‐crystal is proposed in this work, featuring reconfigurable anisotropic vision. A series of polarization‐sensitive synaptic activities and polarization‐sensitive image recognition functions are successfully simulated using this device. The intriguing performance of this device, stems from the crystal anisotropy in β‐Ga2O3, which is confirmed through polarization Raman measurements and first‐principles theoretical calculations. Furthermore, a comprehensive analysis of the persistent photoelectric properties of the device unveils that the adaptability of the optoelectronic synapse device stems from the ionization and dissociation of oxygen vacancies. Ultimately, the device is utilized in the fields of image recognition and information encryption. A four‐layer artificial neural network with two hidden layers is constructed for recognizing handwritten digits. After training, the recognition accuracy reaches over 91.5% for both unpolarized and polarized light. Information encryption is achieved by controlling polarization states. The device enables data generation and encryption to be conducted on the same platform, mitigating exposure risks during transmission and significantly enhancing data security and confidentiality. This work presents new opportunities for future applications of polarization‐based perception systems. [ABSTRACT FROM AUTHOR]

Comprehensive Summary: Stability against oxygen is an important factor affecting the performance of organic semiconductor devices. Improving photooxidation stability can prolong the service life of the device and maintain the mechanical and photoelectric properties of the device. Generally, various encapsulation methods from molecular structure to macroscopic device level are used to improve photooxidation stability. Here, we adopted a crystallization strategy to allow 14H‐spiro[dibenzo[c,h]acridine‐7,9′‐fluorene] (SFDBA) to pack tightly to resist fluorescence decay caused by oxidation. In this case, the inert group of SFDBA acts as a "steric armor", protecting the photosensitive group from being attacked by oxygen. Therefore, compared with the fluorescence quenching of SFDBA powder under 2 h of sunlight, SFDBA crystal can maintain its fluorescence emission for more than 8 h under the same conditions. Furthermore, the photoluminescence quantum yields (PLQYs) of the crystalline film is 327% higher than that of the amorphous film. It shows that the crystallization strategy is an effective method to resist oxidation. [ABSTRACT FROM AUTHOR]

Due to the limitations of traditional geometric error measurement, the measurement accuracy of long-stroke geometric errors is generally not high and the operation is complicated. In response to the above situation, in this study, a geometric error measurement system is built with a laser beam as the reference line and 2D position sensitive detector as the photoelectric conversion device. The single measurement range is 40 m, and the measurement range is further expanded through the principle of segmented splicing. Using an ultra-long guide rail as the measurement object for straightness measurement, the experimental results are similar to those of a laser interferometer. The uncertainty analysis model was obtained through the analysis of quantity characteristics, and based on this, the variance synthesis theorem and probability distribution propagation principle were studied to form two uncertainty synthesis methods. The measurement evaluation results showed that the two methods were basically consistent. The work provided a reference method for the uncertainty evaluation of position-sensitive detector measurement systems in the future. [ABSTRACT FROM AUTHOR]

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In recent years, with the improvement of people's living standards, lamps have played an irreplaceable role as an essential part of daily life. As an important indicator, the lifetime of lamps directly affects their reliability and performance stability. In order to quickly and reliably determine the conventional lifetime of light-emitting diode (LED) lamps, four sets of constant-stress accelerated degradation tests have been performed on LED lamps. The luminance degradation test data were fitted using the three-parameter Weibull right approximation method (TPWRAM), and each sample's pseudo-failure time was calculated by combining with the failure criteria. Ultimately, the life prediction of LED lamps was achieved by using the least square method (LSM) and the probabilistic life prediction model under Weibull distribution. The results indicate that the overall average mean absolute percentage error (MAPE) of the fitting curve of luminance degradation data for LED lamps by TPWRAM is only 5.024%, the determination coefficient of the fitting line from the pseudo-failure time based on Weibull distribution and LSM is close to 1, as well as the adjusted determination coefficient, and the residual standard deviation is close to 0, proving that the probabilistic model established by Weibull distribution has high accuracy in predicting conventional life. The luminance degradation experiment and the life prediction model of LED lamps can provide important guidance for life prediction of other photoelectric devices. [ABSTRACT FROM AUTHOR]

Two-dimensional electron gas (2DEG) has drawn significant attention due to its intriguing properties. Recent advances have encouraged the use of one-dimensional electron gas for high-performance functional devices. Here, we develop a universal method of atomic force microscope tip etching to construct a quasi-one-dimensional (Q1D) channel on the STO surface. Ar+ ion beam is used to bombard the SrTiO3 surface for inducing the Q1D electron gas (Q1DEG). Compared with 2DEG, Q1DEG exhibits a significant enhancement in terms of photoconductivity. At room temperature, it exhibits ultrahigh sensitivity to ambient light with increase in photocurrent by over five orders of magnitude. A slow response to the ON/OFF light indicates persistent photoconductivity (PPC), originating from the defect levels. Furthermore, we investigate the wavelength dependence of PPC in Q1DEG. It is found that decreasing wavelength favors photoresponsivity and prolongs the response time. Based on the electron diffusion process in the oxygen-deficient region, a mechanism has been proposed to explain the advantages of Q1DEG over 2DEG in regard to photoelectric response. This work paves a path for the development of high-performance photoelectric devices based on Q1D electronic systems. [ABSTRACT FROM AUTHOR]

The existing deficiencies in traditional hole‐transporting layer (HTL) materials poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and molybdenum oxide restrict the further advance in the photoelectric conversion efficiency of organic photoelectric devices. Although conjugated polyelectrolytes (CPEs) display great advantage in serving as HTLs, the low work function (WF) and poor conductivity lead to the inferior performances of CPE‐modified devices. Herein, the important influence of electrostatic potential on p‐doping property of CPEs is revealed, and hence a series of CPEs with obvious p‐type self‐doping property based on simple chemical structures of benzene and thiophene derivatives are designed and synthesized. With a higher electron density of conjugated backbone, the CPE PB3T shows an improved doping effect. Moreover, a simultaneous enhancement of WF and conductivity can be achieved by doping the CPE with polyoxometalate (POM). The resulting CPE composite PB3T:POM exhibits good hole injection/collection ability and is compatible with large‐area production technique. The organic solar cells with active areas of 0.04 and 1.00 cm2 exhibit power conversion efficiency values of 18.1% and 15.6%, respectively. PB3T:POM is also used as HTL to fabricate organic light‐emitting diode (OLED) device, and the OLED exhibits a superior luminous efficiency to the PEDOT:PSS device but with a significantly reduced turn‐on voltage from 4.2 to 3.4 V. [ABSTRACT FROM AUTHOR]

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices. [ABSTRACT FROM AUTHOR]

Organic photoelectric neuromorphic devices that mimic the brain are widely explored for advanced perceptual computing. However, current individual neuromorphic synaptic devices mainly focus on utilizing linear models to process optoelectronic signals, which means that there is a lack of effective response to nonlinear structural information from the real world, severely limiting the computational efficiency and adaptability of networks to static and dynamic information. Here, a feedforward photoadaptive organic neuromorphic transistor with mixed‐weight plasticity is reported. By introducing the potential of the space charge to couple gate potential, photoexcitation, and photoinhibition occur successively in the channel under the interference of constant light intensity, which enables the device to transform from a linear model to a nonlinear model. As a result, the device exhibits a dynamic range of over 100 dB, exceeding the currently reported similar neuromorphic synaptic devices. Further, the device achieves adaptive tone mapping within 5 s for static information and achieves over 90% robustness recognition accuracy for dynamic information. Therefore, this work provides a new strategy for developing advanced neuromorphic devices and has great potential in the fields of intelligent driving and brain‐like computing. [ABSTRACT FROM AUTHOR]

Pulsed laser deposition (PLD) is a simple and extremely versatile technique to grow thin films and nanomaterials from a wide variety of materials. Compared to traditional fabrication methods, PLD is a clean physical vapour deposition approach that avoids complicated chemical reactions and by-products, achieving a precise stochiometric transfer of the target material onto the substrate and providing control over the film thickness. Halide perovskite materials have attracted extensive attention due to their excellent photoelectric and photovoltaic properties. In this paper, we present an overview of the fundamental and practical aspects of PLD. The properties and preparation methods of the halide perovskite materials are briefly discussed. Finally, we will elaborate on recent research on the preparation of perovskite solar cells by PLD, summarize the advantages and disadvantages of the PLD preparation, and prospect the all-vacuum PLD-grown solar cells in a full solar cell structure. [ABSTRACT FROM AUTHOR]

Near-infrared organic small molecule luminescent materials have the advantages of easy modification, high quantum efficiency, good biological affinity, and color adjustability; thus, have promising application prospects in the fields of photoelectric devices, sensitive detection, photodynamic therapy, and biomedical imaging. However, traditional organic luminescent molecules have the problems of short emission wavelength, aggregation-causing emission quenching, and low quantum yield. Herein, we successfully synthesized four D-π-A-D light-emitting molecules based on electron-withdrawing malonitrile group and different electron-donating arylamine groups. These compounds showed satisfactory solvatochromism, aggregation-induced emission, red and near-infrared fluorescence, high photoluminescence quantum efficiency and temperature response properties. This successful example of molecular engineering provides a valuable reference for the development of advanced NIR materials with AIE and temperature-sensitive properties. [ABSTRACT FROM AUTHOR]

Photoelectric synaptic devices with optical sensing capability are of great importance in simulating human vision systems. Especially realizing all‐in‐one vision neuristor on silicon based new materials and principles is being pursued. 2D van der Waals (vdW) materials have the unique advantage of arbitrary stacking on demand. Herein, a full‐vdW two‐terminal 2D ferroelectric α‐In2Se3/SnSe p–n heterojunction is proposed to construct an optoelectronic neuristor to simulate visual synaptic functions. Implementation of these simulations is attributed to the co‐modulation of the electrical polarization reconfigurable built‐in electric field caused by p–n junction and photo‐inducing ferroelectric polarization switching. These functions include ultra‐high paired‐pulse facilitation index (457%), short synaptic plasticity, long synaptic plasticity, and retina‐like optical adaptations. The high PPF is crucial for high‐precision decoding and processing of visual information. Meanwhile, the classical Pavlovian conditioned reflexes associated with associative learning are also emulated showing the ability of the device to handle complex electrical and optical inputs. This study demonstrates that two‐terminal ferroelectric p–n heterojunctions have great potential in high‐precision multifunctional optoelectronic visual synaptic devices. [ABSTRACT FROM AUTHOR]

The Rashba effect appears in the semiconductors with an inversion–asymmetric structure and strong spin-orbit coupling, which splits the spin-degenerated band into two sub-bands with opposite spin states. The Rashba effect can not only be used to regulate carrier relaxations, thereby improving the performance of photoelectric devices, but also used to expand the applications of semiconductors in spintronics. In this mini-review, recent research progress on the Rashba effect of two-dimensional (2D) organic–inorganic hybrid perovskites is summarized. The origin and magnitude of Rashba spin splitting, layer-dependent Rashba band splitting of 2D perovskites, the Rashba effect in 2D perovskite quantum dots, a 2D/3D perovskite composite, and 2D-perovskites-based van der Waals heterostructures are discussed. Moreover, applications of the 2D Rashba effect in circularly polarized light detection are reviewed. Finally, future research to modulate the Rashba strength in 2D perovskites is prospected, which is conceived to promote the optoelectronic and spintronic applications of 2D perovskites. [ABSTRACT FROM AUTHOR]

A van der Waals (vdW) heterostructure is formed by combining multiple materials through vdW bonds. It can combine the advantages of electronic, optical, thermal, and magnetic properties of different 2D materials and has the potential to develop into the next generation of high‐performance functional devices. Herein, the current research advances of vdW heterostructures are reviewed. First, current fabrication methods and physical structures of vdW heterostructures are summarized. The 2D/nD (n = 0,1,2,3) mixed‐dimensional heterostructures are discussed in detail. Second, a new type of vdW heterostructure is introduced based on two‐dimensional electron gas with a nanoscale junction interface. Finally, the application prospects of vdW heterostructures in photoelectric and memory devices are further outlined by combing new applications in the neural networks. This review shows that vdW heterostructures have great advantages in high integration, energy harvesting, and logical operations, and it provides directions and suggestions for the future research and application of environmentally friendly, high‐performance, and smart functional devices. [ABSTRACT FROM AUTHOR]

Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memristor with a Bi2FeCrO6/Al-doped ZnO (BFCO/AZO) heterostructure is fabricated that can respond to both electrical and optical signals and successfully simulate a variety of synaptic behaviors, such as STP, LTP, and PPF. In addition, the photomemory mechanism was identified by analyzing the energy band structures of AZO and BFCO. A convolutional neural network (CNN) architecture for pattern classification at the Mixed National Institute of Standards and Technology (MNIST) was used and improved the recognition accuracy of the MNIST and Fashion-MNIST datasets to 95.21% and 74.19%, respectively, by implementing an improved stochastic adaptive algorithm. These results provide a feasible approach for future implementation of optoelectronic synapses. [ABSTRACT FROM AUTHOR]

In recent years, organic-inorganic hybrid lead halide perovskite materials have attracted much attention in the world because of their excellent photoelectric properties, and have been successfully applied in many fields such as solar photovoltaic, photoelectric detection, electroluminescence and so on. At present, most of the device research focuses on perovskite polycrystalline materials, but perovskite single crystal materials have excellent properties such as lower defect state density, higher carrier mobility, longer carrier recombination lifetime, wider light absorption range and higher stability, which can effectively reduce the scattering loss during carrier transport and non-radiative recombination at the grain boundary, and inhibit the hysteresis effect caused by ion migration. Using perovskite single crystal thin film as the active layer of the device is expected to produce more efficient and stable perovskite photoelectric devices. At present, many preparation methods of perovskite single crystal films have been reported, mainly including solution-processed space-confined method, chemical vapor deposition method, top-down processing method, etc. Among them, solution-processed space-confined method is the most widely developed and applied. This paper focuses on the preparation of high-quality perovskite single crystal thin films by solution-processed space-confined method, and the research progress of perovskite single crystal thin films in photodetectors, solar cells, field effect transistors, light-emitting diodes and other related devices, and prospects the future development trend of perovskite single crystal thin films and photoelectric devices. [ABSTRACT FROM AUTHOR]

The development of perovskite photoelectric devices with excellent performance is largely dependent on the defects in the perovskite films. To address this issue, a specific drug, leflunomide (LF, C12H9F3N2O2), was incorporated into the perovskite to reduce defects and improve its photoelectric properties. It is believed that the C=O bond on LF molecule can interact with the uncoordinated Pb2+ of the perovskite, thereby reducing non-radiative recombination. This novel approach of incorporating LF into perovskite films has the potential to revolutionize the development of high-performance perovskite photoelectric devices. The trifluoromethyl functional (-CF3) group on LF can form a protective layer on the surface of the perovskite film, shielding it from water erosion. Moreover, LF can be utilized to alter the nucleation position of perovskite, thus minimizing the number of defects and optimizing the film quality. Consequently, the LF-doped perovskite film displays low trap density and high photoelectric performance. The LF-doped perovskite film showed a trap density of 8.28 × 1011, which is notably lower than the 2.04 × 1012 of the perovskite film without LF. The responsivity and detectivity of the LF-doped perovskite photodetector were 0.771 A/W and 2.81 × 1011 Jones, respectively, which are much higher than the 0.23 A/W and 1.06 × 1010 Jones of the LF-undoped perovskite photodetector. Meanwhile, the LF-doped photodetector maintained an initial photocurrent of 86% after 30 days of storage in air, indicating drastically increased environmental stability. This strongly suggests that LF is an effective additive for perovskites utilized in optoelectronic devices with high performance. [ABSTRACT FROM AUTHOR]

This document provides an overview of advances in photoelectric tracking systems. The photoelectric tracking system is used in various fields such as quantum communication, laser communication, aerospace, and space observation. The system's performance is measured by tracking accuracy and stabilization accuracy, which are influenced by factors like mechanical attributes, sensor capabilities, and control algorithms. The document also highlights research papers on optical and mechanical design, image processing, and motion control planning for photoelectric tracking systems. The goal of this special issue is to present the latest findings and solutions in the field and inspire further research in photoelectric tracking systems. [Extracted from the article]

Photoelectric synaptic devices as a combination of electronic synapse and photodetector are considered as emerging bio-inspired device technologies. These devices have immense potential to conquer the bottleneck of von Neumann architecture based traditional computing systems. In this Letter, we propose an all-oxide based photoelectric neuro-synaptic resistive random access memory device with the structure of ITO/Ga2O3/ZnO/ITO/Glass, in which the conductance states are reversibly tuned by two different wavelengths (405/522 nm) of visible light spectrum. The strength of light pulse is altered to investigate the learning and forgetting phases of the photoelectric response of the device. A basic biomimetic function "learning-forgetting-rehearsal" behavior is imitated up to 20 cycles. Moreover, emulation of some typical synaptic functions such as associative learning and switching between short and long term plasticities indicate the wavelength awareness of the device. Based on the pure optically induced potentiation/depression characteristics, convolutional neural network simulation achieves an overall test accuracy of 82.5% for the classification of Zalando's article images. The noise tolerance capability of neural network is also examined by applying "salt and pepper" noise in high proportion (75%) to corrupt the images. This work may provide a promising step toward the development of transparent electronics in optogenetics-inspired neuromorphic computing. [ABSTRACT FROM AUTHOR]

The photoelectric synaptic devices with the bidirectional optical response and multilevel nonvolatile all‐optical pulse control are the basis for constructing the sensing‐memory‐computing hardware network. However, the current all‐optical‐pulse‐regulated photoelectric synaptic devices cannot realize the bidirectional and multistage nonvolatile regulation of photocurrent responsivity under the detection light excitation. Here, p‐Si/n‐ZnO heterojunction synaptic devices are constructed, and the bidirectional, nonvolatile control of the synaptic device under visible light excitation is realized with up to 60 states of photocurrent responsivity by ultraviolet (UV) and near‐infrared (NIR) irradiation. Based on the performance of the synaptic device, the artificial feedback network can be built to realize the classification and recognition of colored handwritten digits. The recognition accuracy for optical handwritten digits at 415, 530, and 970 nm is 78.1 ± 1.2%, 79.4 ± 1.9% and 79.0 ± 1.6%, respectively. Additionally, the 3 × 3 convolution kernel constructed by the synaptic device can realize image‐processing functions like mean filtering, Gaussian filtering, and edge enhancement. The development of sensing‐storage‐computing all‐optical control artificial vision hardware networks can be greatly aided by the new approach to bidirectional and multistage nonvolatile all‐optical pulse regulation of photoelectric synaptic devices that is proposed in this paper. [ABSTRACT FROM AUTHOR]

The development of neuromorphic visual systems has recently gained momentum due to their potential in areas such as autonomous vehicles and robotics. However, current machine visual systems based on silicon technology usually contain photosensor arrays, format conversion, memory and processing modules. As a result, the redundant data shuttling between each unit, resulting in large latency and high-power consumption, seriously limits the performance of neuromorphic vision chips. Here, we demonstrate an artificial neural network (ANN) architecture based on an integrated 2D MoS2/Ag nanograting phototransistor array, which can simultaneously sense, pre-process and recognize optical images without latency. The pre-processing function of the device under photoelectric synergy ensures considerable improvement of efficiency and accuracy of subsequent image recognition. The comprehensive performance of the proof-of-concept device demonstrates great potential for machine vision applications in terms of large dynamic range (180 dB), high speed (500 ns) and low energy consumption per spike (2.4 × 10−17 J). Here, the authors demonstrate a low-power neuromorphic visual architecture based on a plasmon-enhanced 2D semiconductor phototransistor array, showing high-speed sensing, preprocessing and image recognition functionalities. [ABSTRACT FROM AUTHOR]

Zinc oxide nanorods have broad application prospects in the field of photoelectric devices. However, the application as photodetectors in the visible light band is limited by their narrow luminescent spectrum and poor electrical conductivity. In this work, three different zinc oxide nanorod films respectively with Cu, Al and double-doping have been prepared for investigating the modifying effect of their defect luminescence and electric performance. In this paper, Cu doped zinc oxide with rod structure and Al doped zinc oxide with flaky structure are fabricated by hydrothermal method and sol-gel method, respectively. As for the double-doping, Al doped zinc oxide films are grown on the surface of Si by sol-gel method, and Cu doped zinc oxide nanorods are grown on the surface of Al doped zinc oxide films by hydrothermal method. The results show that the Cu doping can improve the number of defects, leading to the electrons transport from V Zn to Zn i and then releasing the photons. Alternatively, the trivalent aluminum ions exist in zinc oxide nanorods in the form of replacement or gap, increasing the carrier concentration, turn-on voltage and rectification ratio of zinc oxides. As for the Cu–Al double-doping, Al doped zinc oxide films are located between Cu doped zinc oxide nanorods and Si substrate and work as an intermediate layer of current. Trivalent aluminum ions can change the semiconductor properties of zinc oxide and make it have the performance of p-type semiconductor which can improve the electrical properties of zinc oxide semiconductor. Besides, the carrier concentration of Cu–Al double-doping zinc oxide is nearly 3 times higher than that of pure one. Increasing the carrier concentration can increase the current of ZnO–Si heterojunction in the dark, thus improving the photoelectric properties of ZnO nanorods. [ABSTRACT FROM AUTHOR]

Random media pose limitations on the imaging capability of photoelectric detection devices. Currently, imaging techniques employed through random media primarily operate within the laser wavelength range, leaving the imaging potential of terahertz waves unexplored. In this study, we present an approach for terahertz bistatic three-dimensional imaging (TBTCI) of hidden objects through random media. By deducing the field distribution of bistatic terahertz time-domain spectroscopy system, and proposing an explicit point spread function of the random media, we conducted three-dimensional imaging of hidden objects obscured by the random media. Our proposed method exhibits promising applications in imaging scenarios with millimeter-wave radar, including non-invasive testing and biological imaging. [ABSTRACT FROM AUTHOR]

Exploiting narrow-bandwidth-emission fluorescent materials is crucial for next-generation wide-color gamut displays. Inspired by the narrow-bandwidth-emission characteristic of chlorophyll derivates, the present work develops a facile strategy to synthesize a series of red-emitting chlorophyll-structured CDs (CHL-CDs) with ultra-high color purity and good carrier mobility from different traditional Chinese medicine leaves through a simple cross-linking polymerization and carbonization process. The obtained CHL-CDs exhibit bright photoluminescence centered at 671 nm, ultra-high color purity with an FWHM of 23 nm, and a high photoluminescence quantum yield of up to 62%. More importantly, based on in-depth experimental and theoretical studies on the macroscopic host–guest interactions and microscopic interfacial interactions between the CHL-CDs and charge transporting materials, high-performance red electroluminescent light-emitting diodes are successfully prepared, with FWHM of only 28 nm, turn-on voltage of 3.7 V, maximum luminance of 623 cd m−2, and maximum current efficiency of 0.26 cd A−1. This study provides a universal platform for fabricating narrow-bandwidth-emission CDs with significant applications in photoelectric devices. [ABSTRACT FROM AUTHOR]

The application of organic crystal in different photoelectric device has different demand on the crystal structure and morphology, while the self‐assembly of different materials into crystals with a desired morphology remains a challenge. Herein, using three binary halogen‐bonded cocrystals involving a nonplanar halogen accepter molecule tetra(4‐pyridyl)‐tetrathiafulvalene (TTF(py)4), co‐crystallized with halogen donor aryl iodides C6F6‐xIx (x = 2,3, 1,3,5‐trifluoro‐2,4,6‐triiodobenzene (IFB), meta‐1,3‐diiodotetrafluorobenzene (mdIFB) or para‐1,3‐diiodotetrafluorobenzene (pdIFB)), are reported. TTF(py)4‐IFB cocrystals are formed primarily via N···I halogen bonds and F···H hydrogen bonds, while TTF(py)4‐mdIFB cocrystals and TTF(py)4‐pdIFB cocrystals are formed primarily via π–π Interactions, N···I halogen bonds and F···H hydrogen bonds, homogeneous π–π interactions are dominant in TTF(py)4‐mdIFB, while heterogeneous π–π interactions are dominant in TTF(py)4‐pdIFB. Through predicted morphology based on the attachment energy (Eatt) theory, especially π–π interaction, the influence of intermolecular interactions on crystal morphology is analyzed. The study demonstrates that the π–π interaction plays an important role in regulating the crystal structure and morphology, the work provides a deeper understanding of π–π interactions in nonplanar binary halogen‐bonded cocrystals. [ABSTRACT FROM AUTHOR]