1. Compton scattering of the silicon clathrate Ba8Si46: experiment and theory
- Author
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Itou, M., Sakurai, Y., Usuda, M., Cros, Christian, Fukuoka, H., Yamanaka, S., Japan Synchrotron Radiation Research Institute [Hyogo] (JASRI), Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute, Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), Department of Applied Chemistry (Faculty of Engineering, Hiroshima University), and Hiroshima University
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PACS : 78.70.Ck, 71.15.Ap, 74.25.Jb, 74.70.Wz ,[CHIM.MATE]Chemical Sciences/Material chemistry - Abstract
Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.) ; Critical currents ; Fullerenes and related materials ; X-ray scattering; Compton scattering technique. The Compton profile is sensitive to the change of wave functions, and the good agreement between experiment and theory validates a theoretical prediction. A difference Compton profile between the Ba doped and nondoped clathrates (Si136) has been experimentally obtained and compared with that of a first-principles band structure calculation. The experiment and calculation show excellent agreement with respect to the overall shape in the profile. Analyses of partial density of the states (DOS) predict that, by doping Ba atoms into the Si cages, Ba 6s electrons are transferred into Ba 5d orbitals that are strongly hybridized with Si 3p orbitals. The hybridized states form a sharp peak of the DOS in close vicinity of the Fermi level, which plays an important role for the occurrence of superconductivity in Ba8Si46.
- Published
- 2005
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