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Low-temperature luminescence spectra reveal the presence of two independant populations of GaN excitons within a $\mathrm{GaN/AlGaN/GaN/Al_2O_3}$ heterostructure in which a thick (1.5 $\mathrm{\mu m}$) AlGaN layer separates a thin (150 nm) top GaN layer and a thick (3.5 $\mathrm{\mu m}$) bottom GaN layer grown on sapphire. The presence of these two spectrally-distinct families of excitons in each GaN layer of the heterostructure is demonstrated using three different experimental methods: (i) low-power $\mathrm{\mu}$-photoluminescence ($\mathrm{\mu PL}$) using laser excitation sources with wavelengths above and below the AlGaN bandgap, (ii) $\mathrm{\mu PL}$ as a function of optically injected free carrier density, and (iii) quantitative numerical simulation of the $\mathrm{\mu}$-Reflectivity ($\mathrm{\mu R}$). One major impact of the built-in electric field is the reduction of the excitonic lifetime in the GaN surface layer, which transitions from less than 10 ps in the presence of the built-in electric field to the bulk lifetime (90 ps) when the field is screened. This increase in the excitonic lifetime is related to the modification of the band structure in the presence of optically injected free carriers. The effect of these lifetime variations on the luminescence spectra is analyzed. Lastly, we provide an estimate of the Mott density in GaN as $n_{\mathrm{Mott}} = 4\times 10^{17}\, \mathrm{cm^{-3}}$ at 130 K, consistent with values reported in the literature and accounting for the free carrier density required to screen the electric field.

We investigate formal power series ideals and their relationship to topological rewriting theory. Since commutative formal power series algebras are Zariski rings, their ideals are closed for the adic topology defined by the maximal ideal generated by the indeterminates. We provide a constructive proof of this result which, given a formal power series in the topological closure of an ideal, consists in computing a cofactor representation of the series with respect to a standard basis of the ideal. We apply this result in the context of topological rewriting theory, where two natural notions of confluence arise: topological confluence and infinitary confluence. We give explicit examples illustrating that in general, infinitary confluence is a strictly stronger notion than topological confluence. Using topological closure of ideals, we finally show that in the context of rewriting theory on commutative formal power series, infinitary and topological confluences are equivalent when the monomial order considered is compatible with the degree.

The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schr\"odinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.

Anick introduced a resolution, that now bears his name, of a field using an augmented algebra over that field. We present here what one could call a dictionary between Anick's original paper and the other resources on the matter, most of which use the language of non-commutative Groebner bases.

Improved miniaturization capabilities for complex fisheye camera systems have recently led to the introduction of many compact 360-degree cameras on the consumer technology market. Designed primarily for recreational photography, several manufacturers have decided to allow users access to raw imagery for further editing flexibility, thereby offering data at sensor level that can be directly exploited for absolute-light quantification. In this study, we demonstrate methodologies to carefully calibrate a consumer-grade 360-degree camera for radiometry use. The methods include linearity analysis, geometric calibration, assessment of the illumination fall-off across the image plane, spectral-response determination, absolute spectral-radiance calibration, immersion factor determination and dark-frame analysis. Accuracy of the calibration was validated by a real-world experiment comparing sky radiance measurements with a co-localized Compact Optical Profiling System (C-OPS, Biospherical Instruments Inc.), which gave mean unbiased percentage differences of less than 21.1 %. Using the photon-transfer technique, we calculated that this camera consisting of two fisheyes with a 182$^\circ$ field of view in air (152$^\circ$ in water) has a limit of detection of at least $4.6 \times 10^{-7}$ $\mathrm{W \cdot sr^{-1} \cdot m^{-2} \cdot nm^{-1}}$ in its three spectral channels. This technology, with properly stored calibration data, may benefit researchers from multiple scientific areas interested in radiometric geometric light-field study. While some of these radiometric calibration methods are complex or costly, this work opens up possibilities for easy-to-use, inexpensive, and accessible radiance cameras.

The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature.

We present the development process of Bioblox2-5D, an educational biology game aimed at teenagers. The game content refers to protein docking and aims to improve learning about molecular shape complexity, the roles of charges in molecular docking and the scoring function to calculate binding affinity. We developed the game as part of a collaboration between the Computing Department at Goldsmiths, University of London, and the Structural Bioinformatics group at Imperial College London. The team at Imperial provided the content requirements and validated the technical solution adopted in the game. The team at Goldsmiths designed and implemented the content requirements into a fun and stimulating educational puzzle game that supports teaching and motivates students to engage with biology. We illustrate the game design choices, the compromises and solutions that we applied to accomplish the desired learning outcomes. This paper aims to illustrate useful insights and inspirations in the context of educational game development for biology students., Comment: 9 pages

In less than a year's time, March 2022 will mark the twentieth anniversary of the first documented game jam, the Indie Game Jam, which took place in Oakland, California in 2002. Initially, game jams were widely seen as frivolous activities. Since then, they have taken the world by storm. Game jams have not only become part of the day-to-day process of many game developers, but jams are also used for activist purposes, for learning and teaching, as part of the experience economy, for making commercial prototypes that gamers can vote on, and more. Beyond only surveying game jams and the relevant published scientific literature from the last two decades, this paper has several additional contributions. It builds a history of game jams, and proposes two different taxonomies of game jams - a historical and a categorical. In addition, it discusses the definition of game jam and identifies the most active research areas within the game jam community such as the interplay and development with local communities, the study and analysis of game jammers and organisers, and works that bring a critical look on game jams.

We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed circularly-polarized light and by monitoring the intensity and circular polarization spectrum as a function of distance from the excitation spot. The spin-polarized photoelectrons give rise to a well-defined feature in the nearbandgap spectrum, distinct from the main line due to recombination of the spin-unpolarized electrons of the Fermi sea with the same minority photoholes. At a distance of 2 (micro)m, only the main line remains, implying that photoelectrons have reached a charge thermodynamic equilibrium with the Fermi sea. However, although no line is present in the intensity spectrum at the corresponding energy, the circular polarization is still observed at the same energy in the spectrum, implying that photoelectrons have preserved their spin orientation and that the two spin reservoirs remain distinct. Investigations as a function of distance to the excitation spot show that, depending on excitation power, a photoelectron spin polarization of 20% can be transported over a record distance of more than 20 (micro)m. This finding has potential applications for long distance spin transport in n-type doped nanowires.

We introduce a new framework for manipulating and interacting with deep generative models that we call network bending. We present a comprehensive set of deterministic transformations that can be inserted as distinct layers into the computational graph of a trained generative neural network and applied during inference. In addition, we present a novel algorithm for analysing the deep generative model and clustering features based on their spatial activation maps. This allows features to be grouped together based on spatial similarity in an unsupervised fashion. This results in the meaningful manipulation of sets of features that correspond to the generation of a broad array of semantically significant features of the generated images. We outline this framework, demonstrating our results on state-of-the-art deep generative models trained on several image datasets. We show how it allows for the direct manipulation of semantically meaningful aspects of the generative process as well as allowing for a broad range of expressive outcomes.

While the games industry is moving towards procedural content generation (PCG) with tools available under popular platforms such as Unreal, Unity or Houdini, and video game titles like No Man's Sky and Horizon Zero Dawn taking advantage of PCG, the gap between academia and industry is as wide as it has ever been, in terms of communication and sharing methods. One of the authors, has worked on both sides of this gap and in an effort to shorten it and increase the synergy between the two sectors, has identified three design pillars for PCG using mixed-initiative interfaces. The three pillars are Respect Designer Control, Respect the Creative Process and Respect Existing Work Processes. Respecting designer control is about creating a tool that gives enough control to bring out the designer's vision. Respecting the creative process concerns itself with having a feedback loop that is short enough, that the creative process is not disturbed. Respecting existing work processes means that a PCG tool should plug in easily to existing asset pipelines. As academics and communicators, it is surprising that publications often do not describe ways for developers to use our work or lack considerations for how a piece of work might fit into existing content pipelines.

Deep neural networks have become remarkably good at producing realistic deepfakes, images of people that (to the untrained eye) are indistinguishable from real images. Deepfakes are produced by algorithms that learn to distinguish between real and fake images and are optimised to generate samples that the system deems realistic. This paper, and the resulting series of artworks Being Foiled explore the aesthetic outcome of inverting this process, instead optimising the system to generate images that it predicts as being fake. This maximises the unlikelihood of the data and in turn, amplifies the uncanny nature of these machine hallucinations.

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility., Comment: 145 pages, 8 figures

Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing mediated by polariton stimulated scattering can occur concomitantly in both types of modes in a microcavity. By adjusting the detuning between the exciton and the radiative photon mode one can favor polariton lasing either in the radiative or in the guided modes. Our results suggest that the competition between these two types of polariton lasing modes may have played a role in many previous observations of polariton lasing and polariton Bose Einstein condensation.

We propose a computational framework to learn stylisation patterns from example drawings or writings, and then generate new trajectories that possess similar stylistic qualities. We particularly focus on the generation and stylisation of trajectories that are similar to the ones that can be seen in calligraphy and graffiti art. Our system is able to extract and learn dynamic and visual qualities from a small number of user defined examples which can be recorded with a digitiser device, such as a tablet, mouse or motion capture sensors. Our system is then able to transform new user drawn traces to be kinematically and stylistically similar to the training examples. We implement the system using a Recurrent Mixture Density Network (RMDN) combined with a representation given by the parameters of the Sigma Lognormal model, a physiologically plausible model of movement that has been shown to closely reproduce the velocity and trace of human handwriting gestures., Comment: 8 Pages, Accepted for publication at MOCO '17, 4th International Conference on Movement Computing 28-30 June 2017, London, United Kingdom

We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons.

GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental condition. Experimental results are well reproduced by simulation using Boltzmann equations. Lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity as expected due to a larger Rabi splitting. However the threshold is strongly impacted by LO phonons through phonon-assisted polariton relaxation. We observe and discuss this effect as a function of temperature and detuning. Finally the polariton lasing threshold at room temperature is quite similar in both microcavities. This study highlights polariton relaxation mechanism and their importance for threshold optimization.

A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.

A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the best choice for a blue/UV-emitting polariton laser device. We report on the fabrication of a new family of fully hybrid microcavities that combine the best-quality ZnO material available (bulk substrate) and two dielectric distributed Bragg reflectors, demonstrating large quality factors (>2500) and Rabi splittings (~200 meV). Low threshold polariton lasing is achieved between 4 and 300 K and for excitonic fractions ranging between 12% and 96 %. A phase diagram highlighting the role of LO phonon-assisted relaxation in this polar semiconductor is established, and a remarkable switching between polariton modes is demonstrated.

Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations.

In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence ({\mu}-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to {\mu}-PL, revealing an efficient polaritonic relaxation even at low excitation power., Comment: 12 pages, 3 figures

We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as other spectra, shows that a homogeneous width of the order of 10 \mu eV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively., Comment: 12 pages, 2 figures

Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal., Comment: 4 pages, 4 figures

The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode polariton branch. It is partly broken under strong excitation density, so that the emission from this branch dominates the one from cavity-mode polaritons.

We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulk-like behavior to be observed even in the strong coupling regime, is illustrated both experimentally and theoretically by considering cavities with increasing thickness.

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions., Comment: 4 pages, 6 figures

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions., Comment: 4 pages, 6 figures, mistakenly uploaded duplicated source files with the slightly different title

The optical properties of bulk $\lambda/2$ GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence at 5 K and 300 K. The structures have an Al$_{0.2}$Ga$_{0.8}$N/AlN distributed Bragg reflector as the bottom mirror and either an aluminium mirror or a dielectric Bragg mirror as the top one. First, the influence of the number of pairs of the bottom mirror on the Rabi splitting is studied. The increase of the mirror penetration depth is correlated with a reduction of the Rabi splitting. Second, the emission of the lower polariton branch is observed at low temperature in a microcavity containing two Bragg mirrors and exibiting a quality factor of 190. Our simulations using the transfer-matrix formalism, taking into account the real structure of the samples investigated are in good agreement with experimental results., Comment: published version

We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation., Comment: 4 pages, 4 figures

We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands., Comment: 4 pages, 6 figures, submitted to PRB

Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces., Comment: 4 pages, 5 figures, submitted to PRL