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Synthetic porogens provide an easy way to create porous structures, but their usage is limited due to synthetic difficulties, process complexities and prohibitive costs. Here we investigate the use of bacteria, sustainable and naturally abundant materials, as a pore template. The bacteria require no chemical synthesis, come in variable sizes and shapes, degrade easier and are approximately a million times cheaper than conventional porogens. We fabricate free standing porous multiwalled carbon nanotube (MWCNT) films using cultured, harmless bacteria as porogens, and demonstrate substantial Li-oxygen battery performance improvement by porosity control. Pore volume as well as shape in the cathodes were easily tuned to improve oxygen evolution efficiency by 30% and double the full discharge capacity in repeated cycles compared to the compact MWCNT electrode films. The interconnected pores produced by the templates greatly improve the accessibility of reactants allowing the achievement of 4,942 W/kg (8,649 Wh/kg) at 2 A/g

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency. (C) 2016 Author(s).

Herein, we report on atomic layer deposition of ternary InxGa1-xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 degrees C using organometallic Ga and In precursors along with N-2/H-2 and N-2 plasma, respectively. The effect of In content on structural, optical, and morphological properties of InxGa1-xN thin films was investigated. Grazing incidence X-ray diffraction showed that all InxGa1-xN thin films were polycrystalline with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy depicted the peaks of In, Ga, and N in bulk of the film and revealed the presence of relatively low impurity contents. In contents of different InxGa1-xN thin films were determined by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Transmission electron microscopy also confirmed the polycrystalline structure of InxGa1-xN thin films, and elemental mapping further revealed the uniform distribution of In and Ga within the bulk of InxGa1-xN films. Higher In concentrations resulted in an increase of refractive indices of ternary alloys from 2.28 to 2.42 at a wavelength of 650 nm. The optical band edge of InxGa1-xN films red-shifted with increasing In content, confirming the tunability of the band edge with alloy composition. Photoluminescence measurements exhibited broad spectral features with an In concentration dependent wavelength shift and atomic force microscopy revealed low surface roughness of InxGa1-xN films with a slight increase proportional to In content.

Here we demonstrate the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) processes by fabricating flexible polymer-GaN organic-inorganic core-shell nano-fibers at a processing temperature much lower than that needed for the preparation of conventional GaN ceramic nanofibers. Polymer-GaN organic-inorganic core-shell nanofibers fabricated by the HCPA-ALD of GaN on electrospun polymeric (nylon 6,6) nanofibers at 200 degrees C were characterized in detail using electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence measurements, and dynamic mechanical analysis. Although transmission electron microscopy studies indicated that the process parameters should be further optimized for obtaining ultimate uniformity and conformality on these high surface area 3D substrates, the HCPA-ALD process resulted in a similar to 28 nm thick polycrystalline wurtzite GaN layer on polymeric nanofibers of an average fiber diameter of similar to 70 nm. Having a flexible polymeric core and low processing temperature, these core-shell semiconducting nanofibers might have the potential to substitute brittle ceramic GaN nanofibers, which have already been shown to be high performance materials for various electronic and optoelectronic applications.