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A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit parameters of a GaN high electron-mobility transistor device is presented. Elements of the extrinsic equivalent-circuit topology are evaluated using a modified 'cold field-effect transistor' approach whereby the undesirable need to forward bias the device's gate terminal is avoided. Intrinsic elements are determined based on a circuit topology, which identifies, for the first time, a time delay in the output conductance of GaN-based devices. The validity of the proposed algorithm has been thoroughly verified with excellent correlation between the measured and modeled S-parameters up to 50 GHz. Index Terms--Gallium nitride (GaN), heterojunction field-effect transistor (HFET), high electron-mobility transistor (HEMT), parameter extraction, small-signal modeling.

Infrared (IR) and Raman thermography were used for examining the temperature on and around the transit region of GaAs Gunn diodes. A temperature maximum within the transient region and a large temperature gradient toward the heatsink was observed.

A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit parameters of a GaN high electron-mobility transistor device is presented. Elements of the extrinsic equivalent-circuit topology are evaluated using a modified "cold field-effect transistor" approach whereby the undesirable need to forward bias the device's gate terminal is avoided. Intrinsic elements are determined based on a circuit topology, which identifies, for the first time, a time delay in the output conductance of GaN-based devices. The validity of the proposed algorithm has been thoroughly verified with excellent correlation between the measured and modeled S-parameters up to 50 GHz. [ABSTRACT FROM AUTHOR]