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A detailed description of the techniques and equipment employed in the ion-implantation process is presented. Results of high-energy electron irradiation of a Mylar capacitor with ion-implanted electrodes are compared to the response of a control sample. The ion-implanted electrodes exhibit better carrier injection than conventional foil electrodes. Transient radiation effects data from irradiation of a monolithic ceramic capacitor and two glass capacitors are included. One of the glass capacitors contained a semicrystalline dielectric with very high dielectric constant. The transient radiation effects in Mylar versus temperature appear to fit a band model for the conduction process in which a continuous distribution of carrier traps is located in the forbidden zone and one sign of carrier is immobilized. An examination of the energy loss processes of moderately fast electrons in insulators indicates that from 15 eV to 3 eV the energy loss is primarily to excitons whereas energy loss to optical and acoustical phonons occurs down to thermal energies. (Author), See also AD-626 474.