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Background. Dental health in patients with diabetes mellitus type 2 and methods of its correction is an important part in the complex of medical and preventive care of the pathology. Objective. The objective of the research is to study the efficiency of medications with probiotic potency in the process of prosthodontic treatment with whole piece permanent structures of dental prostheses of patients with diabetes mellitus type 2. Material and мethods. Qualitative and quantitative characteristics of oral fluid microbiocenosis of patients with diabetes mellitus type 2 have been studied in the process of the combination treatment including denture treatment with whole piece permanent structures with the use of «Bifidumbacterinum». Bacterial inoculation for oral fluid was done using Gould serial delution method. Results. Progressive reduction in the quantification which marks the content of pathogenic and liable to be pathogenic organisms in patients with diabetes mellitus type 2 stoma was noted after the combination treatment had been done. Herewith, the significance of stabilizing flora agents increased. Conclusions. The results of the microbiological research presented prove applicability of bacterial medication along with a package of measures during oral rehabilitation of patients with diabetes mallitus type 2 .

The N-Al0.27Ga0.73N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L g (ranging from 170 nm to 0.5 μm) and gate widths W s (ranging from 100 to 1200 μm) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f t, the maximum oscillation frequency fmax, and the power gain MSG/MAG and Mason’s coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f t and fmax attain their maximum values of f t = 48 GHz and fmax = 100 GHz at L g = 170 nm and W g = 100 μm. The optimum values of W g and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al0.27Ga0.73N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz). [ABSTRACT FROM AUTHOR]