34 results on '"Oualli, M."'
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2. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
3. Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
4. Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
5. 10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
6. Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer
7. First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
8. InAlGaN/GaN HEMT technology for Ka band applications
9. Réalisation de commutateurs rapides à base de transistors GaN pour des applications de suivi d’enveloppe
10. InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz
11. ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
12. Réalisation d'amplificateurs de puissance en bande K en technologie de composants HEMTs AlInN/GaN
13. Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies
14. Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs
15. Temperature dependent degradation modes in AlGaN/GaN HEMTs
16. Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs
17. Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz
18. Nonlinear characterization and modeling of low frequency dispersive effects in power transistors
19. Characterisation and modeling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
20. Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications.
21. S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
22. 12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
23. Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate
24. 160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
25. First demonstration of AlInN/GaN HEMTs amplifiers at K band
26. Development of InAlN/GaN HEMTs Power Devices in S-Band
27. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications
28. Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs
29. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
30. Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band
31. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
32. Performances of AlInN/GaN HEMTs for power applications at microwave frequencies.
33. Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band.
34. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications.
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