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The adsorbed structure of 1-pyrenebutanoic acid succinimidyl ester (PASE) on graphene was investigated based on density functional theory. We found two locally stable structures: a straight structure with the chainlike part of butanoic acid succinimidyl ester (BSE) lying down and a bent structure with the BSE part directed away from graphene, keeping the pyrene (Py) part adsorbed on graphene. Then, to elucidate the adsorption mechanism, we separately estimated the contributions of the Py and BSE parts to the entire PASE adsorption, and the adsorption effect of the BSE part was found to be secondary in comparison to the contribution of the Py. Next, the mobility of the BSE part at room temperature was confirmed by the activation energy barrier between straight and bent structures. To take account of the external environment, we considered the presence of amino acids and the hydration effect by a three-dimensional reference interaction site model. The contributions of glycine molecules and the solvent environment to stabilizing the bent PASE structure relative to the straight PASE structure were found. Therefore, the effect of the external environment around PASE is of importance when the standing-up process of the BSE part from graphene is considered., Comment: 21 pages, 5 figures, accepted for publication in ACS Omega

We investigate the process by which a water molecule diffuses on the surface of an Al(111) electrode under constant bias voltage by first-principles density functional theory. To understand the diffusion path of the water on the Al(111), we calculated the minimum energy path (MEP) determined by the nudged elastic band method in combination with constant electron chemical potential (constant-$\mu_{\rm e}$) methods. The simulation shows that the MEP of the water molecule, its adsorption site, and the activation barrier strongly depend on the applied bias voltage. This strong dependence of the water diffusion process on the bias voltage is in good agreement with the result of a previous scanning tunneling microscopy (STM) experiment. The agreement between the theoretical and experimental results implies that accurate treatment of bias voltage plays a significant role in understanding the interaction between the electric field and the surface of the material. Comparative studies of the diffusion process with the constant total number of electrons (constant-$N_\mathrm{e}$) scheme show that the absence of strong interaction between the molecular dipole and the electric field leads to a different understanding of how water diffuses on a metal surface. The proposed constant-$\mu_{\rm e}$ scheme is a realistic tool for the simulation of reactions under bias voltage not only using STM but also at the electrochemical interface.

We investigated the free corrosion potential at an interface between an Al electrode and an aqueous NaCl solution (NaCl(aq)) under acidic conditions via density functional theory combined with the effective screening medium and reference interaction site model (ESM-RISM). Firstly, the electrode potentials for the anodic and cathodic corrosion reactions were obtained from the grand potential profile as a function of the electron chemical potential at the interface. Thereafter, we determined the free corrosion potential using the Tafel extrapolation method. The results of the free corrosion potential were consistent with previous experimental data. By controlling the pH of the NaCl(aq), we determined the pH dependence of the free corrosion potential, and the results agreed well with the experimental results. Our results indicated that the ESM-RISM method duly described the environmental effect of an acidic solution and precisely determined the free corrosion potential. Therefore, the application of this method presents an efficient approach toward calculating the free corrosion potential for various reactions., Comment: 17 pages, 7 figures

Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a low electronic density of states (i.e., quantum capacitance), which limits their ability to redistribute charge and efficiently screen this field. To explore these effects, we introduce a first-principles approach based on the effective screening medium framework, which is used to directly simulate the charge storage behavior of single- and multi-layered graphene in a way that more closely approximates operating devices. We demonstrate that the presence of the interfacial field significantly alters the capacitance in electrodes thinner than a few graphene layers, deriving in large part from intrinsic space-charge screening limitations. The capacitance is also found to be highly sensitive to the gap between the electrode and the solvent (contact layer), which offers possibilities for tuning the interfacial capacitance of the electrode by proper engineering of the electrolyte. Our results offer an alternative interpretation of discrepancies between experimental measurements and fixed-band models, and provide specific implications for improving graphene-based devices., Comment: 12 pages, 3 figures

Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility. These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene field effect transistor.