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The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon. [ABSTRACT FROM AUTHOR]

Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine the semi-insulating behavior of carbon-doped GaN (GaN:C) layers and are still debated. Two models are discussed; both can theoretically achieve semi-insulating behavior: the dominant acceptor model (DAM, DAR < 1) and the auto-compensation model (ACM, DAR = 1). We perform a capacitance–voltage analysis on metal/GaN:C/nGaN (n-doped GaN) structures, exhibiting Fermi-level pinning in GaN:C, 0.7 eV above the valence band maximum. This observation coupled with further interpretation clearly supports the DAM and contradicts the ACM. Furthermore, we reveal a finite depletion width of a transition region in GaN:C next to nGaN, where carbon acceptors drop below the Fermi level becoming fully ionized. Calculation of the potential drop in this region exhibits DAR values of 0.5–0.67 for GaN:C with total carbon concentrations of 10 18 cm − 3 and 10 19 cm − 3 . Based on those results, we re-evaluate formerly published density functional theory (DFT)-calculated formation energies of point defects in GaN. Unexpectedly, growth in thermodynamic equilibrium with the bulk carbon phase contradicts our experimental analysis. Therefore, we propose the consideration of extreme carbon-rich growth conditions. As bulk carbon and carbon cluster formation are not reported to date, we consider a metastable GaN:C solid solution with the competing carbon bulk phase being kinetically hindered. DFT and experimental results agree, confirming the role of carbon at nitrogen sites as dominant acceptors. Under N-rich conditions, carbon at gallium sites is the dominant donor, whereas additional nitrogen vacancies are generated under Ga-rich conditions. [ABSTRACT FROM AUTHOR]

We provide theoretical and simulation analysis of the small signal response of SiO2/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, Cp, and conductance, Gp, . Cp, -voltage and Gp, -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance Rbr, and the effective channel resistance. In particular, in the spill-over region, the drop of Cp, with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of Rbr, with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, Dit, from the Gp,/ω vs. angular frequency ω curves. A peak in Gp/ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the Gp/ vs. ω peak saturates at high Dit, which can lead to underestimation of Dit. Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage. [ABSTRACT FROM AUTHOR]

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with source and drain contacts grounded). Degradation is analyzed by measuring the drain current, a threshold voltage, a Schottky contact barrier height, a gate leakage and an ideality factor, an access, and an intrinsic channel resistance, respectively. For the drain-gate bias <38 V parameters are only reversibly degraded due to charging of the pre-existing surface states. This is in a clear contrast to reported AlGaN/GaN HEMTs where an irreversible damage and a lattice relaxation have been found for similar conditions. For drain-gate biases over 38 V InAlN/GaN HEMTs show again only temporal changes for the negative gate bias stresses; however, irreversible damage was found for the off-state and for the semi-on stresses. Most severe changes, an increase in the intrinsic channel resistance by one order of magnitude and a decrease in the drain current by ∼70%, are found after the off-state ∼50 V drain-gate bias stresses. We conclude that in the off-state condition hot electrons may create defects or ionize deep states in the GaN buffer or at the InAlN/GaN interface. If an InAlN/GaN HEMT channel is opened during the stress, lack of the strain in the barrier layer is beneficial for enhancing the device stability. [ABSTRACT FROM AUTHOR]

Background: Central venous catheters (CVCs) provide an immediate hemodialysis access but are considered to be of elevated risk for complications. It remains unclear, if CVCs per se have relevant impact on clinical outcome. We provide an assessment of CVC-associated complications and their impact on mortality., Methods: In a single center retrospective study, CVC patients between JAN2015-JUN2021 were included. Data on duration of CVC use, complications and comorbidities was collected. Estimated 6-month mortality was compared to actual death rate., Results: About 478 CVCs were analyzed. Initiation of dialysis was the main reason for CVC implantation. Death was predominant for termination of CVC use. Infections were rare (0.6/1000 catheter days), complications were associated with certain comorbidities. Actual 6-month mortality was lower than predicted (14.3% vs 19.6%)., Conclusion: (1) CVCs are predominantly implanted for initiation of hemodialysis; (2) serious complications are rare; (3) complications are associated with certain comorbidities; and (4) CVC patients survive longer than predicted., Competing Interests: Declaration of conflicting interestsThe author(s) declared no potential conflicts of interest with respect to the research, authorship, and/or publication of this article.

The influence of surface modifications on the Schottky barrier height for gallium nitride semiconductor devices is frequently underestimated or neglected in investigations thereof. We show that a strong dependency of Schottky barrier heights for nickel/aluminum-gallium nitride (0001) contacts on the surface terminations exists: a linear correlation of increasing barrier height with increasing electronegativity of superficial adatoms is observed. The negatively charged adatoms compete with the present nitrogen over the available gallium (or aluminum) orbital to form an electrically improved surface termination. The resulting modification of the surface dipoles and hence polarization of the surface termination causes observed band bending. Our findings suggest that the greatest Schottky barrier heights are achieved by increasing the concentration of the most polarized fluorine-gallium (-aluminum) bonds at the surface. An increase in barrier height from 0.7 to 1.1 eV after a 15% fluorine termination is obtained with ideality factors of 1.10 ± 0.05. The presence of surface dipoles that are changing the surface energy is proven by the sessile drop method as the electronegativity difference and polarization influences the contact angle. The extracted decrease in the Lifshitz-van-der-Waals component from 48.8 to 40.4 mJ/m(2) with increasing electronegativity and concentration of surface adatoms confirms the presence of increasing surface dipoles: as the polarizability of equally charged anions decreases with increasing electronegativity, the diiodomethane contact angles increase significantly from 14° up to 39° after the 15% fluorine termination. Therefore, a linear correlation between increasing anion electronegativity of the (Al)GaN termination and total surface energy within a 95% confidence interval is obtained. Furthermore, our results reveal a generally strong Lewis basicity of (Al)GaN surfaces explaining the high chemical inertness of the surfaces.