1. Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)
- Author
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Kukushkin SA, Osipov AV, Feoktistov NA, Grudinkin SA, Perova TS, and Wasyluk J
- Subjects
3C-SiC ,Voids in SiC ,Micro-Raman spectroscopy ,Micro-Raman mapping ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.
- Published
- 2010
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