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Cold electron bolometers have shown their suitability for use in modern fundamental physical experiments. Fabrication and measurements of the samples with cold-electron bolometers integrated into coplanar antennas are performed in this study. The bolometric layer was made using combined aluminum-hafnium technology to improve quality of aluminum oxide layer and decrease the leakage current. The samples of two types were measured in a dilution cryostat at various temperatures from 20 to 300 mK. The first sample with Ti/Au/Pd antenna shows response in the two frequency bands, at 7--9 GHz with bandwidth of about 20%, and also at 14 GHz with 10% bandwidth. The NEP below 10 aW/Hz^1/2 is reached at 300 mK for 7.7 GHz signal. The second sample with aluminum made antenna shows response in the frequency range 0.5--3 GHz due to the effect of kinetic inductance of superconducting aluminum., Comment: 6 pages, 9 figures

We experimentally investigate magnetocaloric effect for the topological magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ in a wide temperature range. The isothermal magnetic entropy change $\Delta S$ is calculated from the experimental magnetization curves by using Maxwell relation. In addition to the expected $\Delta S$ peak at the Curie temperature $T_C$, we obtain another one at the temperature $T_{inv}$ of the hysteresis inversion, which is the main experimental result. The inverted hysteresis usually originates from the antiferromagnetic coupling between two magnetic phases. For Co$_3$Sn$_2$S$_2$ topological magnetic Weyl semimetal these phases are the ferromagnetic bulk and the spin-polarized topological surface states. Thus, the pronounced magnetocaloric effect at $T_{inv}$ is determined by the bulk magnetization switching by the exchange bias field of the surface spin-polarizad phase, in contrast to the ferromagnetic-paramagnetic transition at the Curie temperature $T_C$. For possible applications of magnetocaloric effect, Weyl semimetals open a new way to shift from ferromagnetic to the antiferromagnetic systems without loss of efficiency, but with higher reversibility and with smaller energy costs.

We experimentally study magnetization reversal curves for MnTe single crystals, which is the altermagnetic candidate. Above 85~K temperature, we confirm the antiferromagnetic behavior of magnetization $M$, which is known for $\alpha$--MnTe. Below 85~K, we observe anomalous low-field magnetization behavior, which is accompanied by the sophisticated $M(\alpha)$ angle dependence with beating pattern as the interplay between $M(\alpha)$ maxima and minima: in low fields, $M(\alpha)$ shows ferromagnetic-like 180$^\circ$ periodicity, while at high magnetic fields, the periodicity is changed to the 90$^\circ$ one. This angle dependence is the most striking result of our experiment, while it can not be expected for standard magnetic systems. In contrast, in altermagnets, symmetry allows ferromagnetic behavior only due to the spin-orbit coupling. Thus, we claim that our experiment shows the effect of weak spin-orbit coupling in MnTe, with crossover from relativistic to non-relativistic net magnetization, and, therefore, we experimentally confirm altermagnetism in MnTe.

We experimentally investigate magnetization reversal curves for a GeTe topological semimetal. In addition to the known lattice diamagnetic response, we observe narrow magnetization loop in low fields, which should not be expected for non-magnetic GeTe. The hysteresis is unusual, so the saturation level is negative in positive fields, and the loop is passed clockwise, in contrast to standard ferromagnetic behavior. The experimental hysteresis curves can not be obtained from usual ferromagnetic ones by adding/subtracting of any linear dependence, or even by considering several interacting magnetic phases. The possibility of several phases is also eliminated by the remanence plots technique (Henkel or {\delta}M plots). We explain our results as a direct consequence of the correlation between ferroelectricity and spin-polarized surface states in GeTe, similarly to magnetoelectric structures.

We investigate the magnetic response of thin NiI$_2$ flakes for temperatures above 80~K. Since no magnetic ordering is expected for bulk NiI$_2$, we observe clear paramagnetic response for massive NiI$_2$ single crystals. In contrast, thin NiI$_2$ flakes show well-defined ferromagnetic hysteresis loop within $\pm2$~kOe field range. The value of the response does not scale with the sample mass, ferromagnetic hysteresis can be seen for any flake orientation in the external field, so it originates from the sample surface, possibly, due to the anisotropic exchange (Kitaev interaction). The observed ferromagnetism is weakly sensitive to temperature up to 300~K. If a flake is multiply exposed to air, ferromagnetic hysteresis is accompanied by the periodic modulation of the magnetization curves, which is usually a fingerprint of the multiferroic state. While NiI$_2$ flakes can not be considered as multiferroics above 80~K, surface degradation due to the crystallohydrate formation decreases the symmetry of NiI$_2$ surface, which produces the surface ferroelectric polarization in addition to the described above ferromagnetic one.

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification.

Despite the chiral topological semimetal CoSi is known as bulk diamagnetic, it shows unusual surface ferromagnetism of debatable origin. The ferromagnetic ordering has been attributed to the distorted bonds, the superlattice of ordered vacancies, or even to topological surface textures due to the spin polarization in the neighboring Fermi arcs. We experimentally compare magnetization reversal curves for initially oxidized CoSi single crystals and cleaved samples with a fresh, oxide-free surface. While the oxidized CoSi samples do not show sizable ferromagnetism, the fresh CoSi surface gives a strong ferromagnetic response, which is accompanied by the pronounced modulation of the angle dependence of magnetization, as it can be expected for easy and hard axes in a ferromagnet. In addition to the first order reversal curves analysis, this observation allows us to distinguish between different mechanisms of the ferromagnetic ordering in CoSi single crystals. We conclude that the surface states-induced RKKY interaction between distorted bonds near the sample surface is responsible for the strong ferromagnetic multi-domain behavior for freshly cleaved samples.

We study magnetization reversal and first order reversal curves for two different magnetic topological semimetals, Co3Sn2S2 and Fe3GeTe2, in a wide temperature range. For the magnetization reversal, we observe strong temperature dependence of the initial (low-temperature) step-like magnetization switchings, so the inverted hysteresis appears at high temperatures. Usually, the inverted hysteresis is a fingerprint of material with two independent magnetic phases, the inversion reflects the phase interaction. First order reversal curve analysis confirms the two-phase behavior even at the lowest temperatures of the experiment. While the bulk ferromagnetic magnetization shows strong temperature dependence, one of the observed phases demonstrates perfect stability below the Curie temperature. The obtained hysteresis loops are of the bow-tie type, which is usually ascribed to appearance of the skyrmionic phase. The described two-phase behavior is mostly identical for Co3Sn2S2 and Fe3GeTe2 magnetic topological semimetals, only the characteristic temperatures differ for these materials. The specifics of our experiment is the excellent temperature stability of the second phase, while the skyrmions are usually observed near the Curie temperature. On the other hand, temperature stability can be expected for surface-state induced spin textures due to the topological protection of surface states in topological semimetals. This also explains the universal behavior of the second phase for two different topological semimetals Co3Sn2S2 and FGT. Both these materials have strongly different bulk properties, the only similarity is the presence of the topological surface states. Thus, we can ascribe the second, temperature-stable magnetic phase to the surface states in topological semimetals.

We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for three-dimensional flakes, electron concentration is not sensitive to the gate electric field due to the screening by bulk carriers. Unexpectedly, we observe that sample capacitance C is strongly diminishing for both gate field polarities, so C(Vg) is a maximum near the zero gate voltage. Also, we observe well-developed hysteresis with the gate voltage sweep direction for the experimental C(Vg) curves. From our analysis, the capacitance behavior is explained by the known dependence of the Rashba parameter on the electric field for giant Rashba splitting in GeTe. In this case, the hysteresis in capacitance should be ascribed to polarization evolution in GeTe surface layers, which also allows to realize the regime of dynamic negative capacitance. The latter can be directly observed in time-dependent resistive measurements, as non-monotonic evolution of voltage response to the step-like current pulse. Thus, the negative capacitance regime can indeed improve performance and, therefore, the energy efficiency of electronic devices.

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface.

We experimentally investigate thermoelectric response of a 100~nm thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage $V_{xy}^{2\omega}$, which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current $I_{ac}$. In addition to strongly non-monotonous dependence $V_{xy}^{2\omega}$, we observe that dc field direction controls the sign of the temperature gradient in the SnSe flake. We provide arguments, that electrocaloric effect is the mostly probable reason for the results obtained. Thus, our experiment can be understood as demonstration of the possibility to induce electrocaloric effect by in-plane electric field in conducting ferroelectric crystals and to detect it by thermoelectric response.

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $\beta$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.

We investigate electron transport along the surface of WTe$_2$ three-dimensional single crystals, which are characterized by coexistence of Weyl semimetal conductivity and ferroelectricity at room temperature. We find that non-linear behavior of $dV/dI(I)$ WTe$_2$ differential resistance is accompanied by slow relaxation process, which appears as the $dV/dI(I)$ dependence on the sign of the current change. This observation is confirmed by direct investigation of time-dependent relaxation curves. While strongly non-linear differential resistance should be expected for the zero-gap WTe$_2$, the slow relaxation in transport is very unusual for well-conducting semimetals at room temperature. We establish, that non-monotonous dependence of the amplitude of the effect on driving current $\Delta dV/dI(I)$ well corresponds to the known Sawyer-Tower's ferroelectric hysteresis loop. This conclusion is also confirmed by gate voltage dependencies, so our results can be understood as a direct demonstration of WTe$_2$ ferroelectric polarization in charge transport experiment.

We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications., Comment: final version

We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages., Comment: final version

We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like C60 due to its high resistance. Metallic low work function cathodes are extremely unstable in PS-PV due to reaction with halogens I-/Br-, and it would be desirable to have stable carbon cathodes on top of thick low resistance ETL for enhancing the stability of PS-PVs. We show that gating such top CNT cathode in ionic liquid, as part of a supercapacitor charged by Vg tunes the Fermi level of CNT by EDL charging, and causes lowering of a barrier at of C60/C70 ETL. Moreover, at higher gating voltage ions further propagates into fullerene by electrochemical n-doping, which increases dramatically PV performance by raising mostly two parameters: Isc and FF, resulting in PCE efficiency raised from 3 % to 11 %. N-doping of ETL strongly enhances charge collection by ETL and CNT raising Isc and lowering series resistance and thus increasing strongly PCE. Surprisingly Voc is not sensitive in PS-PV to external Vg gating, on the contrary, to strongly enhanced Voc in ionically gated organic PV, where it is the main gating effect. This insensitivity of Voc to lowering of the work function of Vg gated CNT electrode is a clear indication that Voc in PS-PV is determined by inner p-i-n junction formation in PS itself, via accumulation of its intrinsic mobile ionic species halogens and cations and their vacancies., Comment: 19 pages, 6 figures