38 results on '"Orlov, L.K."'
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2. Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
3. Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field
4. Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers
5. Exciton luminescence in Ge-Ge(sub 1 - x)Si(sub x) multiple-quantum-well structures
6. Electrical behaviour of Al/SiGe/Si heterostructures: effect of surface treatment and dislocations
7. Exciton luminescence in Ge-Ge1-xSix multiple-quantum-well structures.
8. Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
9. Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources
10. Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si1-xGex structures grown by gas source molecular beam epitaxy.
11. Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method
12. The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
13. Dislocation pattern formation in epitaxial structures based on SiGe alloys
14. The growth kinetics of Si1−xGex layers from SiH4 and GeH4
15. Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi
16. Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution
17. INVESTIGATION OF THE INFLUENCE OF GeH3 MOLECULE DISINTEGRATION KINETICS ON ABRUPTNESS OF Ge COMPOSITION AT Si1-xGex/Si INTERFACE IN Si-GeH4 MBE
18. Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge1−xSix heterostructures
19. Features of electronic transport in relaxed Si/Si1−X Ge X heterostructures with high doping level.
20. Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices
21. Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures
22. Quantum hall effect in selectively doped strained p-Ge/Ge1-xSix superlattices
23. Raman scattering in Ge-Ge1-xSix superlattice
24. Heteroepitaxy of Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si (100) substrates by GeH/sub 4/-Si MBE.
25. The Hall effect in selectively doped strained-layer Ge-Ge1−xSix superlattices superlattices
26. Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
27. Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources
28. Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method
29. The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
30. Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures
31. Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices
32. Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution
33. Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy
34. Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/.
35. The Hall effect in selectively doped strained-layer Ge-Ge 1−xSi x superlattices superlattices
36. The growth kinetics of Si 1− xGe x layers from SiH 4 and GeH 4
37. Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge 1− xSi x heterostructures
38. Quantum hall effect in selectively doped strained p-Ge/Ge 1-xSi x superlattices
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