23 results on '"Onstine, A.H."'
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2. Novel dielectrics for gate oxides and surface passivation on GaN
3. Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO
4. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation
5. Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors
6. The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS
7. Small signal measurement of Sc2O3 AlGaN/GaN moshemts
8. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
9. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
10. The Oxide/Nitride Interface: a study for gate dielectrics and field passivation
11. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors
12. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS
13. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
14. New applications advisable for gallium nitride
15. Charge pumping in Sc2O3∕GaN gated mos diodes
16. Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs
17. Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors.
18. Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide.
19. Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts
20. Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning.
21. Deep traps in unpassivated and Sc[sub 2]O[sub 3]-passivated AlGaN/GaN high electron mobility transistors.
22. Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
23. New Dielectrics for Gate Oxides and Surface Passivation on GaN.
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