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Transport properties (dc electrical resistivity, threshold electric field, and narrow-band noise) are reported for nanoribbon specimens of NbSe3 with thicknesses as low as 18 nm. As the sample thickness decreases, the resistive anomalies characteristic of the charge density wave (CDW) state are suppressed and the threshold fields for nonlinear CDW conduction apparently diverge. Narrow-band noise measurements allow determination of the concentration of carriers condensed in the CDW state n c, reflective of the CDW order parameter Δ. Although the CDW transition temperatures are relatively independent of sample thickness, in the lower CDW state Δ decreases dramatically with decreasing sample thickness.

Superconductivity in monolayer niobium diselenide (NbSe2) on bilayer graphene is studied by electrical transport. Monolayer NbSe2 is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have TC = 1.9 K. In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. The superconducting transition and upper critical fields in air exposed and selenium capped samples are compared. Schematic of monolayer NbSe2/bilayer graphene with selenium capping layer and electrical contacts.

Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe 2 a CDW sets in at T CDW = 33 K and superconductivity sets in at T c = 7.2 K. Below T c these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single two-dimensional (2D) layer of NbSe 2 by means of low-temperature scanning tunnelling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3 × 3 CDW order in NbSe 2 remains intact in two dimensions. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of= 4 meV at the Fermi energy, which is accessible by means of STS owing to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe 2, thus providing insight into CDW formation and superconductivity in this model strongly correlated system.

We present a graphene-based wideband microphone and a related ultrasonic radio that can be used for wireless communication. It is shown that graphene-based acoustic transmitters and receivers have a wide bandwidth, from the audible region (20∼20 kHz) to the ultrasonic region (20 kHz to at least 0.5 MHz). Using the graphene-based components, we demonstrate efficient high-fidelity information transmission using an ultrasonic band centered at 0.3 MHz. The graphene-based microphone is also shown to be capable of directly receiving ultrasound signals generated by bats in the field, and the ultrasonic radio, coupled to electromagnetic (EM) radio, is shown to function as a high-accuracy rangefinder. The ultrasonic radio could serve as a useful addition to wireless communication technology where the propagation of EM waves is difficult.

Superconductivity in monolayer niobium diselenide (NbSe2) on bilayer graphene is studied by electrical transport. Monolayer NbSe2 is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have TC = 1.9 K. In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. The superconducting transition and upper critical fields in air exposed and selenium capped samples are compared. Schematic of monolayer NbSe2/bilayer graphene with selenium capping layer and electrical contacts. [ABSTRACT FROM AUTHOR]

Charge transfer at the interface between dissimilar materials is at the heart of electronics and photovoltaics. Here we study the molecular orientation, electronic structure, and local charge transfer at the interface region of C 60 deposited on graphene, with and without supporting substrates such as hexagonal boron nitride. We employ ab initio density functional theory with van der Waals interactions and experimentally characterize interface devices using high-resolution transmission electron microscopy and electronic transport. Charge transfer between C 60 and the graphene is found to be sensitive to the nature of the underlying supporting substrate and to the crystallinity and local orientation of the C 60 . Even at room temperature, C 60 molecules interfaced to graphene are orientationally locked into position. High electron and hole mobilities are preserved in graphene with crystalline C 60 overlayers, which has ramifications for organic high-mobility field-effect devices.