1. Wafer-scale growth of two-dimensional, phase-pure InSe
- Author
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Song, Seunguk, Jeon, Sungho, Rahaman, Mahfujur, Lynch, Jason, Kumar, Pawan, Chakravarthi, Srikrishna, Kim, Gwangwoo, Du, Xingyu, Blanton, Eric, Kisslinger, Kim, Snure, Michael, Glavin, Nicholas R., Stach, Eric A., Olsson, Roy H., and Jariwala, Deep
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics ,Physics - Applied Physics - Abstract
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes., Comment: MS + SI
- Published
- 2023