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Investigation of temperature-dependent photoluminescent properties of potassium perylene-3,4,9,10-tetracarboxylate (K4PTC), a molecule with no internal rotational degrees of freedom, shows aggregation-induced enhanced emission at room temperature. The different excitonic emission processes are dependent of temperature, some of which quenches in an intermediate temperature range (from 50 to 150 K). The exciton excited states switching phenomenon from "dark" to "bright" states is observed and its explained using Herzberg-Teller selection rule. K4PTC is a molecule comparable to the size of its precursor, perylene-3,4,9,10-tetracarboxylic anhydride (PTCDA) and is highly soluble in water, contrary to PTCDA, which is poorly soluble in most solvents. Powder x-ray diffraction measurements corroborate a lesser degree of ordering of bulk K4PTC compared to bulk PTCDA. The green luminescent molecule could, in principle, be used as a biomarker, or in photodynamic therapy, if further studies show relatively low toxicity.

International audience; Mixed-halide based hybrid perovskite semiconductors have attracted tremendous attention as a promising candidate for high efficient photovoltaic and light-emitting devices. However, these advanced perovskite materials may undergo phase segregation under light illumination due to halide ion migration, affecting their optoelectronic properties. Here, we report photo-excitation induced phase segregation in triple-cation mixed-halide perovskite films that yields to red-shift in photoluminescence response. We demonstrate that photo-excitation induced halide ion migration leads to the formation of smaller-bandgap iodide-rich and larger-bandgap bromide-rich domains in the perovskite film, where the phase segregation rate is found to follow the excitation power-density as a power law. Results confirm that charge carrier lifetime increases with redshift in photoluminescence due to the trapping of photo-excited carriers in the segregated smaller-bandgap iodide-rich domains. Interestingly, we found that these photo-induced changes are fully reversible and thermally activated when the excitation power is turned off. A significant difference in activation energies for halide ion migration is observed during phase segregation and recovery process under darkness. Additionally, we have investigated the emission linewidth broadening as a function of temperature which is governed by the exciton-optical phonon coupling. The mechanism of photo-induced phase segregation is interpreted based on excitonphonon coupling strength in both mixed and demixed (segregated) states of perovskite film.

International audience; Hybrid organic-inorganic perovskites have become one of the most promising low-cost alternatives to traditional semiconductors in the field of photovoltaics and light emitting devices. It combines both attractive features of organic and inorganic materials within a single composite, for instance with excellent electronic properties. We used x-ray diffraction to reveal a sub-structure within CH 3 NH 3 PbI 3 single crystals. We could observe the presence of additional peaks with a square symmetry in several monocrystalline samples. We discuss these results in terms of two different models: a superstructure modulated in two in-plane orthogonal directions, and a model with tilted domains with a shallow angle of ~0.6°. In both cases, the modulated or tilted domains appear in regions with small lattice expansion. We show that this last model appears to be the most likely to explain our observations.

International audience; Defect engineering is applied to hybrid (CH3NH3)PbI3 organic–inorganic perovskites. These materials have become one of the most promising low‐cost alternatives to traditional semiconductors in the field of photovoltaics and light emitting devices. Here Helium ion irradiation at low energy has been used as a tool for the controlled introduction of point defects in both single crystals and polycrystalline thin films. The irradiation defects modify the opto‐electronic properties as probed using photoluminescence (PL) spectroscopy from 10 K to room‐temperature. Contrary to usual semiconductors, a very good resilience of the PL properties with irradiation is observed, even associated to an enhancement of the optical emission at low temperature. These results are discussed in relation with the tetragonal to orthorhombic low‐temperature phase transition below T = 160 K. A comparison between spectra from single crystals and polycrystalline films, both with and without irradiation defects, allows a better understanding of the light emission mechanisms in both kinds of samples. The authors thereby evidence radiation hardness of these materials and the specificity of defects and their impact on light emission properties.

We report on the decrease in photoluminescence (PL) intensity with the increase of the sample temperature (thermal quenching) in crystalline silicon and its suppression after ion irradiation. The crystalline silicon surface was passivated with intrinsic and doped hydrogenated amorphous silicon (a-Si:H) layer stacks as for making silicon heterojunction solar cell precursors. Low energy argon ion irradiation, in the range between 5 and 17 keV, was used for controlled defect formation either in the thin a-Si:H top layer or at the interface with the crystalline silicon beneath. The irradiation defects introduce radiative recombination centers in the a-Si:H as can be measured from PL at low temperature. Moreover, the irradiation and annealing result in a strong modification of the thermal quenching of the PL intensity up to 500 K, showing evidence for the strong reduction of thermally activated non-radiative recombinations at the amorphous-crystalline interface. This result can have implications in the field of crystalline silicon surface passivation.

International audience

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (

This paper is devoted to the determination of the spin density in the S = 2 ground state of [Mn(Me6-[14]ane-N4)Cu(oxpn)](CF3SO3)2 with Me6-[14]ane-N4 = (±)-5,7,7,12,14,14-hexamethyl-1,4,8,11-tetraa...

A-Si:H/c-Si heterojunction solar cells have reached record efficiencies of 24.7%. The passivation of c-Si is the key to achieve a high-efficiency. Indeed, the abrupt discontinuity in the crystal structure at the amorphous/crystal interface induces a high density of dangling bonds creating a high density of defects in the band gap. These defects act as recombination centers for electron-hole pairs photogenerated in c-Si. Several dielectric layers can be used to passivate n-type and p-type wafers: (i) SiO₂ produced by thermal growth, (ii) Al₂O₃ deposited by ALD, (iii) a-SiNₓ:H and a-Si:H deposited by PECVD. The most versatile passivation layer is a-Si: H because it is effective for both p-type and n-type wafers. In addition, this process has a low thermal budget since the deposition is made at 200°C. The drawback of this passivation layer, in particular when p-type doped, is that it does not withstand temperatures above 200°C. However, in order to have a good electrical contact, TCO and metal electrodes require high temperature annealing (between 300°C and 500°C).We implanted Argon ions in solar cell precursors with energies between 1 and 30 keV, which allows to control the depth to which we are creating defects. By varying the fluence between 10¹² Ar.cm⁻² and 10¹⁵ Ar.cm⁻² we control the concentration of defects. We show that implantation with an energy of 5 keV and a fluence of 10¹⁵ Ar.cm⁻² is not sufficient to damage the a-Si:H/c-Si interface. The effective lifetime of the minority charge carriers, measured using a photoconductance technique (decay time of photoconductivity), decreases only from 3 ms to 2.9 ms after implantation. On the other hand the implantations at 10 keV, 10¹⁴ Ar.cm⁻² or at 17 keV, 10¹² Ar.cm⁻² are sufficient to degrade the effective lifetime by more than 85%.Following implantation the solar cells have been annealed in a controlled atmosphere at different temperatures and this up to 420°C. We show that annealing can heal the implantation defects. Moreover, under certain conditions, we obtain lifetimes after implantation and annealing greater than the initial effective lifetime. Combining ion implantation and annealing leads to robust passivation with effective carrier lifetimes above 2 ms even after annealing our solar cell precursors at 380°C. We used a large variety of techniques such as photoconductance, photoluminescence, spectroscopic ellipsometry, Transmission Electron Microscopy, Secondary Ion Mass Spectrometry, Raman spectroscopy and hydrogen exodiffusion to characterize and analyze the physico-chemical phenomena involved in the modification of solar cells precursors. We discuss here several effects such as the increase of the effective lifetime and the temperature robustness by the preservation of hydrogen in amorphous silicon layer and this even after annealing. This hydrogen preservation can be explained by the increase of the number of Si–H bonds in amorphous silicon and the formation of cavities during implantation. In the course of annealing the hydrogen which diffuses is trapped and then released by cavities and dangling bonds, which limits its exodiffusion and makes it available for dangling bonds passivation.; Les cellules solaires à hétérojonction a-Si:H/c-Si atteignent un rendement record de 24.7% en laboratoire. La passivation de la surface du c-Si est la clé pour obtenir de hauts rendements. En effet, la brusque discontinuité de la structure cristalline à l'interface amorphe/cristal induit une forte densité de liaisons pendantes créant une grande densité de défauts dans la bande interdite. Ces défauts sont des centres de recombinaison pour les paires électron-trou photogénérées dans le c-Si. Différentes couches diélectriques peuvent être utilisées pour passiver les wafers dopés n et dopés p : (i) le SiO₂ réalisé par croissance thermique, (ii) l’Al₂O₃ déposé par ALD, (iii) le a-SiNₓ:H et l’a-Si:H déposés par PECVD. La couche de passivation la plus polyvalente est a Si:H puisqu’elle peut passiver aussi bien les wafers dopés n que ceux dopés p. De plus sa production est peu coûteuse en énergie car sa croissance est réalisée à une température d’environ 200°C. L’inconvénient de cette couche de passivation est que lorsqu’elle est dopée p elle ne supporte pas des températures supérieures à 200°C, en raison de l’exodiffusion des atomes d’hydrogène qu’elle contient. Cependant, afin d'avoir un bon contact électrique, TCO et électrodes métalliques, il est souhaitable de recuire à plus haute température (entre 300°C et 500°C). Nous avons implanté des ions Argon de façon contrôlée dans des précurseurs de cellules solaires à des énergies comprises entre 1 et 30 keV, pour contrôler la profondeur à laquelle nous créons les défauts. En variant la fluence entre 10¹² Ar.cm⁻² et 10¹⁵ Ar.cm⁻² nous contrôlons la concentration de défauts créés. Nous montrons qu’une implantation à une énergie de 5 keV avec une fluence de 10¹⁵ Ar.cm⁻² n’est pas suffisante pour endommager l’interface a-Si:H/c-Si. La durée de vie effective des porteurs minoritaires mesurée par photoconductance (temps de décroissance de la photoconductivité) passe de 3 ms à 2,9 ms après implantation. En revanche les implantations à 10 keV, 10¹⁴ Ar.cm⁻² ou à 17 keV, 10¹² Ar.cm⁻² sont suffisantes pour dégrader la durée de vie effective de plus de 85%. Suite aux implantations les cellules solaires ont subi des recuits sous atmosphère contrôlée à différentes températures et ce jusqu’à 420°C. Nous avons découvert que le recuit permet de guérir les défauts introduits par l’implantation. Mais surtout, dans certains cas, d’obtenir des durées de vie après implantation et recuit supérieures aux durées de vies initiales. En combinant l’implantation ionique et les recuits, nous conservons de bonnes durées de vies effectives des porteurs de charges (supérieures à 2 ms) même avec des recuits jusqu’à 380°C. Nous avons utilisé une grande variété de techniques telles que la photoconductance, la photoluminescence, l’ellipsométrie spectroscopique, la microscopie électronique en transmission, la Spectroscopie de Masse d’Ions Secondaires, la spectroscopie Raman et l’exodiffusion de l’hydrogène pour caractériser et analyser l’ensemble des résultats et phénomènes physico-chimique intervenant dans la modification des précurseur de cellules solaires. Nous discutons ici de plusieurs effets tels que l’augmentation de la durée de vie et la tenue en température par la conservation de l’hydrogène dans la couche de silicium amorphe et ceci même après les recuits. Cette conservation peut s’expliquer par l’augmentation du nombre de liaisons Si-H au sein du silicium amorphe et par la formation de cavités lors de l’implantation. Durant les recuits l’hydrogène qui diffuse est piégé puis libéré par les cavités et/ou les liaisons pendantes, ce qui limite son exo-diffusion et le rend de nouveau disponible pour la passivation des liaisons pendantes.