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Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon emitters. This task is partially achieved by controlled ion implantation to introduce selected impurities in the host material, and requires the development of challenging beam focusing or collimation procedures coupled with single-ion detection techniques. We report on protocol for the direct optical activation of split-vacancy color centers in diamond via localized processing with continuous wave laser at mW optical powers. We demonstrate the activation of photoluminescent Mg- and Sn-related centers at both the ensemble and single-photon emitter level in ion-implanted, high-purity diamond crystals without further thermal processing. The proposed lithographic method enables the activation of individual color centers at specific positions of a large area sample by means of a relatively inexpensive equipment offering the real-time, in situ monitoring of the process., Comment: 17 pages, 7 figures

Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and controlling the optical properties of NV centers in NDs through surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations were performed to investigate the evolution of surface chemical groups using IR spectroscopy and their influence on optical properties using photoluminescence spectroscopy and PL decay measurements. Proton irradiation was explored over a wide range of fluences (10^14 to 10^17 cm^-2) to precisely control the NV center concentration, identifying conditions that maximize creation and emission intensity. Furthermore, NV center charge state control was achieved by analyzing the NV-/NV0 ratio with varying surface terminations and NV center concentrations. A novel predictive mathematical model was developed to evaluate the efficiencies of forming NV- and NV0. Although tested specifically with proton-irradiated NDs, this model has broad applicability, representing a significant advancement in predicting the outcomes of ion-beam-based color center generation in diamond.

Droplet-based microfluidics systems have become widely used in recent years thanks to their advantages, varying from the possibility of handling small fluid volumes to directly synthesizing and encapsulating various living forms for biological-related applications. The effectiveness of such systems mainly depends on the ability to control some of these system's parameters, such as produced droplet size and formation time, which represents a challenging task. This work reports an experimental study on tuning droplet size and generation time in a flow-focusing geometry fabricated with stereolithography 3D printing by exploring the interplay of phase and geometrical parameters. We produced droplets at different low flow rates of continuous and dispersed phases to assess the effect of each of these phases on the droplets' size and formation time. We observed that smaller droplets were produced for high viscosity oil and water phase, along with high flow rates. In addition, changing the microfluidics channels' width, and morphology of the orifice has shown a similar effect on droplet size, as shown in the case of high-viscosity solutions. The variation of the bifurcation angle shows a noticeable variation in terms of the achieved droplet size and formation time. We further investigated the impact of modifying the width ratio of the continuous and dispersed phases on droplet formation

Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs has driven the scientific community to its extensive investigation. The role of various functionalities has been considered and different conduction mechanisms have been proposed. In this work, we reported on a systematic study of the modification of the electrical properties of differently sized NDs, as a function of different thermal treatments in air, hydrogen or inert atmosphere. Samples were electrically characterized in controlled humidity conditions to consider the influence of water on conductivity. NDs electrical properties were interpreted in connection with their surface chemistry and structural features, probed with infrared and Raman spectroscopies. The presence of surface graphite, hydrogen terminations or water adsorbed on hydrophilic oxygen-containing functional groups rendered NDs more conductive. These moieties indeed enabled different conduction mechanisms, which were respectively graphite-mediated conduction, water-induced transfer doping and Grotthus mechanism in surface-adsorbed water. The effect of particles size on conductivity has also been evaluated and discussed. Our experimental findings shed light on the link between surface modifications and electrical properties of NDs, providing at the same time an interpretative key to understanding the effect of particles dimensions.

Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 {\deg}C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state., Comment: 11 pages, 7 figures

The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.

We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC showed a significant modification of the CCE distribution, with a progressive shrinkage of the depletion layer as the fluence of the damaging C ions increases. A simple electrostatic model ruled out that the shrinkage is due to the implanted charge and ascribed the perturbation of the electrostatic landscape to radiation-induced defects with positive charge state.

This article presents an important theorem, which shows that from the moments of the standard normal distribution one can generate density functions originating a family of models. Additionally, we discussed that different random variable domains are achieved with transformations. For instance, we adopted the moment of order two, from the proposed theorem, and transformed it, which allowed us to exemplify this class as unit distribution. We named it as Alpha-Unit (AU) distribution, which contains a single positive parameter $\alpha$ ($\text{AU}(\alpha) \in [0,1]$). We presented its properties and showed two estimation methods for the $\alpha$ parameter, the maximum likelihood estimator (MLE) and uniformly minimum-variance unbiased estimator (UMVUE) methods. In order to analyze the statistical consistency of the estimators, a Monte Carlo simulation study was carried out, where the robustness was demonstrated. As real-world application, we adopted two sets of unit data, the first regarding the dynamics of Chilean inflation in the post-military period, and the other regarding the daily maximum relative humidity of the air in the Atacama Desert. In both cases shown, the AU model is competitive, whenever the data present a range greater than 0.4 and extremely heavy asymmetric tail. We compared our model against other commonly used unit models, such as the beta, Kumaraswamy, logit-normal, simplex, unit-half-normal, and unit-Lindley distributions.

In this work we address the problem of detecting whether a sampled probability distribution of a random variable $V$ has infinite first moment. This issue is notably important when the sample results from complex numerical simulation methods. For example, such a situation occurs when one simulates stochastic particle systems with complex and singular McKean-Vlasov interaction kernels. As stated, the detection problem is ill-posed. We thus propose and analyze an asymptotic hypothesis test for independent copies of a given random variable which is supposed to belong to an unknown domain of attraction of a stable law. The null hypothesis $\mathbf{H_0}$ is: `$X=\sqrt{V}$ is in the domain of attraction of the Normal law' and the alternative hypothesis is $\mathbf{H_1}$: `$X$ is in the domain of attraction of a stable law with index smaller than 2'. Our key observation is that~$X$ cannot have a finite second moment when $\mathbf{H_0}$ is rejected (and therefore $\mathbf{H_1}$ is accepted). Surprisingly, we find it useful to derive our test from the statistics of random processes. More precisely, our hypothesis test is based on a statistic which is inspired by methodologies to determine whether a semimartingale has jumps from the observation of one single path at discrete times. We justify our test by proving asymptotic properties of discrete time functionals of Brownian bridges., Comment: 35 pages, 4 figures

We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 {\deg}C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications., Comment: 7 figures