295 results on '"Ohdomari, I."'
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2. Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation
3. Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation
4. Three-dimensional site dependence of single-ion-induced charge collection at a p-n junction - role of funneling and diffusion processes under different ion energy
5. SiO2/Si interface structure and its formation studied by large-scale molecular dynamics simulation
6. Evaluation of soft-error hardness of DRAMs under quasi-heavy ion irradiation using He single ion microprobe technique
7. Improved interatomic potential for stressed Si, O mixed systems
8. Selective growth of carbon nanostructures on nickel implanted nanopyramid array
9. Total dose dependence of soft-error hardness in 64kbit SRAMs evaluated by single-ion microprobe technique
10. A trial to detect isolated defects in Si induced by single ion implantation
11. Radiation effects induced by high energy He single ions at Si/SiO2 interfaces
12. Oxidation mechanism of dimers on Si(001) surfaces
13. HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS AND THEIR METAL CONTACT PROPERTIES
14. Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching
15. Nucleation and growth of Cu clusters on highly oriented pyrolytic graphite observed with an in situ electrochemical scanning tunneling microscope
16. Simple fabrication of high density concave nanopyramid array (NPA)on Si surface
17. Effect of environmental O 2 on the dynamical process of the Si(111)‘1×1’→7×7 structural phase transition
18. Rearrangement of dimers in a dimer–adatom–stacking fault structure on an Si(111) surface
19. Properties of Amorphous Silicon Layers Formed by Ion Implantation and Vapor Deposition
20. Quantitative characterization of ion-induced SiO...Si interface traps by means of MeV He irradiation.
21. Investigation of thin-film Ni/single-crystal SiC interface reaction.
22. Parallel silicide contacts.
23. Microstructure and Schottky barrier height of iridium silicides formed on silicon.
24. Formation of iridium silicides from Ir thin films on Si substrates.
25. Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering.
26. Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide.
27. Low-temperature redistribution of As in Si during Ni silicide formation.
28. Reduction of contact resistivity by As redistribution during Pd2Si formation.
29. Effects of hydrogenation on lightly doped polycrystalline silicon.
30. Redistribution of As during Pd2Si formation: Ion channeling measurements.
31. Modeling of Interface Atomic Arrangement for Analysis of Solid Phase Epitaxy and Si-On-Insulator Structure
32. Reactions and diffusion of atomic and molecular oxygen in the SiO2 network
33. Residual order within thermally grown amorphous SiO2 on crystalline silicon
34. Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films
35. Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method
36. Impact of adequate selection of channel direction on (001) and (110) wafer orientation for strained nanowire transistors
37. Simulation on the Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
38. Experimental Investigation of Electron-Phonon Scattering Effect in Strained Si Nanowire FETs at Low Temperature
39. Atomistic Modeling of GeO2/Ge and SiO2/Si Interface Structures
40. Performance enhancement of semiconductor devices by control of discrete dopant distribution
41. Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays
42. A reliable method for the counting and control of single ions for single-dopant controlled devices
43. Transconductance enhancement of Si nanowire transistors by oxide-induced strain
44. Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
45. Analysis of Electron Beam Sensitivity of Self-Assembled Monolayer Resist Depending on Terminal Group
46. Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation
47. Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification
48. Control of both number and position of dopant atoms in semiconductors by single ion implantation
49. Reactions and diffusion of atomic and molecular oxygen in theSiO2network
50. Very High Yield Growth of Vertically Aligned Single-Walled Carbon Nanotubes by Point-Arc Microwave Plasma CVD
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