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117 results on '"Oei, Y"'

4. Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches

Author

Albores-Mejia, A., Williams, K. A., De Vries, T., Smalbrugge, E., Oei, Y. S., Smit, M. K., Nötzel, R., Electro-Optical Communication, Photonic Integration, and Photonics and Semiconductor Nanophysics

Subjects
Computer Science::Hardware Architecture
Abstract

A compact cascaded crossbar element with low power penalty, high distortionthreshold and low crosstalk penalty is presented. Dual-stage monolithic switch integration is facilitated using a quantum dot epitaxy at 1550nm wavelength.

Published
2009

5. Passively mode-locked quantum dot laser diodes at 1.53 μm with large operating regime

Author

Heck, M. J. R., Renault, A., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Kjeld Eikema, Wim Ubachs, Anantathanasarn, S., Nötzel, R., and Atoms, Molecules, Lasers

Subjects
SDG 7 - Affordable and Clean Energy
Abstract

Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53/μm is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.

Published
2008

6. 18GHz Fabry-Pérot integrated extended cavity passively modelocked lasers

Author

Barbarin, Yohan, Bente, E.A.J.M, Heck, M, Pozo, J, Rorison, J, Oei, Y., Nötzel, R., Smit, M, Eindhoven University of Technology [Eindhoven] (TU/e), University of Strathclyde [Glasgow], Barbarin, Yohan, Photonic Integration, and Photonics and Semiconductor Nanophysics

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Integrated modelocked lasers producing pulses down to 2.1 ps were fabricated in bulk InGaAsP using butt-joint active-passive integration. It is demonstrated that good modelocked operation can be obtained in devices using this integration technology. Pulses obtained are close to transform limited and the dynamics outside the control parameter range for modelocked operating are reduced through the use of an extended cavity.

Published
2007

7. Integrated optical waveguide device for picosecond pulse compression

Author

Martijn Heck, Erwin Bente, Barbarin, Y., Jung, H. D., Oei, Y. S., Nötzel, R., Daan Lenstra, Meint Smit, Photonic Integration, Photonics and Semiconductor Nanophysics, and Electro-Optical Communication

Abstract

We report on the fabrication and characterization of a new device, named IRIS. It is designed to increase the coherent optical bandwidth of a picosecond pulse train for subsequent pulse compression. The IRIS device consists of a concatenated array of semiconductor optical amplifiers and saturable absorbers. It is realized in the InP/InGaAsP material system for the 1550 nm range. Measurements on the realized IRIS devices show increased broadening of the pulse spectrum as compared to an SOA of equivalent length and a smoother optical power spectrum. Consequent compression of the chirped pulses using standard single mode fiber shows decreased pulse pedestals as compared to an SOA, indicating increased linearity of the chirp. Pulse compression up to 50 % is observed.

Published
2007

10. All-optical switching of 80 Gb/s data packets using a wavelength converter controlled by a monolithically integrated optical flip-flop

Author

Liu, Y., Eduward Tangdiongga, Hill, M. T., J.H.C. Zantvoort, van, Smalbrugge, E., T. Vries, de, Binsma, J. J. M., Oei, Y. S., Xaveer Leijtens, Meint Smit, Khoe, G. D., Dorren, H. J. S., Electro-Optical Communication, Photonic Integration, and Center for Wireless Technology Eindhoven

Subjects
ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Physics::Optics
Abstract

We demonstrate all-optical switching of 80 Gb/s data-packets using an optical wavelength converter that consists of an SOA and an optical filter. The wavelength converter is controlled by a monolithically integrated optical flip-flop memory.

Published
2005

11. Butt-Joint Reflectivity and Loss in InGaAsP/InP Waveguides

Author

Barbarin, Yohan, Bente, E., Marquet, Christelle, Leclere, E., de Vries, T, van Veldhoven, P., Oei, Y, Nötzel, R., Smit, M, Binsma, J, and Barbarin, Yohan

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Published
2005

13. Deep dry etching process development for photonic crystals in InPbased planar waveguides

Author

Van der Heijden, R., Andriesse, M.S.P., Carlström, C.F., Van der Drift, E., Geluk, E.J., Van der Heijden, R.W., Karouta, F., Nouwens, P., Siang Oei, Y., and De Vries, T.

Subjects
ICP etching, stomatognathic system, fungi, InP, technology, industry, and agriculture, macromolecular substances, photonic crystal
Abstract

Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etching twodimensional photonic crystals in InP-based materials. Etch rates up to 3.7 µm/min and selectivity’s to the SiN mask up to 19 are reported. For the removal of indiumchloride etch products both the application of elevated temperatures and high ion energy’s are investigated. The reactor pressure is an important parameter, as it determines the supply of reactive chlorine. It is shown, that N2 passivates feature sidewalls during etching, improving the anisotropy. Ions that impact onto the sidewalls, either directly or after scattering with the SiN-mask or hole interior, cause sidewall etching. Highly directional ion bombardment and vertical sidewalls in the SiN-mask are therefore crucial for successful etching of fine high aspect ratio structures.

Published
2004

14. Deep dry etching process development for photonic crystals in InPbased planar waveguides

Author

Van der Heijden, R. (author), Andriesse, M.S.P. (author), Carlström, C.F. (author), Van der Drift, E. (author), Geluk, E.J. (author), Van der Heijden, R.W. (author), Karouta, F. (author), Nouwens, P. (author), Siang Oei, Y. (author), De Vries, T. (author), Van der Heijden, R. (author), Andriesse, M.S.P. (author), Carlström, C.F. (author), Van der Drift, E. (author), Geluk, E.J. (author), Van der Heijden, R.W. (author), Karouta, F. (author), Nouwens, P. (author), Siang Oei, Y. (author), and De Vries, T. (author)

Abstract

Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etching twodimensional photonic crystals in InP-based materials. Etch rates up to 3.7 µm/min and selectivity’s to the SiN mask up to 19 are reported. For the removal of indiumchloride etch products both the application of elevated temperatures and high ion energy’s are investigated. The reactor pressure is an important parameter, as it determines the supply of reactive chlorine. It is shown, that N2 passivates feature sidewalls during etching, improving the anisotropy. Ions that impact onto the sidewalls, either directly or after scattering with the SiN-mask or hole interior, cause sidewall etching. Highly directional ion bombardment and vertical sidewalls in the SiN-mask are therefore crucial for successful etching of fine high aspect ratio structures., Delft Institute for Microelectronics and Submicron Technology, Electrical Engineering, Mathematics and Computer Science

Published
2004

16. InP/InGaAs Photodetector on SOI Photonic Circuitry

Author

Binetti, P R A, primary, Leijtens, X J M, additional, de Vries, T, additional, Oei, Y S, additional, Di Cioccio, L, additional, Fedeli, J.-M, additional, Lagahe, C, additional, Van Campenhout, J, additional, Van Thourhout, D, additional, van Veldhoven, P J, additional, Nötzel, R, additional, and Smit, M K, additional

Published
2010
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26. All Optical Packet Switching above 80 Gb/s

Author

Dorren, H.J.S., primary, Liu, Y., additional, Tangdiongga, E., additional, Hill, M. T., additional, van Zantvoort, J.H.C., additional, Khoe, G.D., additional, den Besten, J. H., additional, Smalbrugge, E., additional, de Vries, T., additional, Binsma, H., additional, Oei, Y. S., additional, Leijtens, X.J.M., additional, and Smit, M.K., additional

Published
2006
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27. Cross Waveguide Grating Experimental Demonstration

Author

Munoz, P., primary, den Besten, J. H., additional, de Vries, T., additional, Sander-Jochem, M. J. H., additional, Oei, Y. S., additional, van Veldhoven, P.J., additional, Notzel, R., additional, Smalbrugge, E., additional, Pastor, D., additional, Capmany, J., additional, and Smit, M. K., additional

Published
2006
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28. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Author

Anantathanasarn, S., primary, Nötzel, R., additional, van Veldhoven, P. J., additional, van Otten, F. W. M., additional, Barbarin, Y., additional, Servanton, G., additional, de Vries, T., additional, Smalbrugge, E., additional, Geluk, E. J., additional, Eijkemans, T. J., additional, Bente, E. A. J. M., additional, Oei, Y. S., additional, Smit, M. K., additional, and Wolter, J. H., additional

Published
2006
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29. Wavelength Tunable (1.55 μm Region) InAs/InGaAsP/InP (100) Quantum Dots in Telecom Laser Applications

Author

Notzel, R., primary, Anantathanasarn, S., additional, van Veldhoven, P. J., additional, van Otten, F. W. M., additional, Eijkemans, T. J., additional, Barbarin, Y., additional, Bente, E. A. J. M., additional, Vries, T. de, additional, Smalbrugge, E., additional, Geluk, E. J., additional, Oei, Y. S., additional, Smit, M. K., additional, and Wolter, J. H., additional

Published
2006
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31. Coupled Mach–Zehnder interferometer memory element

Author

Hill, Martin T., primary, Dorren, H. J.S., additional, Leijtens, X. J.M., additional, den Besten, J. H., additional, de Vries, T., additional, van Zantvoort, J. H.C., additional, Smalbrugge, E., additional, Oei, Y. S., additional, Binsma, J. J.M., additional, Khoe, G. D., additional, and Smit, M. K., additional

Published
2005
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47. 160 Gbit/s line-rate data routing through monolithic multi-stage optical switch circuit.

Author

Albores-Mejia, A., Gomez-Agis, F., Zhang, S., Dorren, H. J. S., Leijtens, X. J. M., de Vries, T., Oei, Y. S., Heck, M. J. R., Notzel, R., Robbins, D. J., Smit, M. K., and Williams, K. A.

Subjects
SWITCHING circuits, PHOTONICS, OPTOELECTRONICS, INTEGRATED circuits, NONLINEAR theories
Abstract

A monolithic, multi-stage, photonic circuit comprising up to four cascaded, SOA-based, crossbar switches is assessed at record 160 Gbit/s serial line rates. Power penalties of only 1.2 dB signify an important route to high-speed, high-density optoelectronic integrated circuits. [ABSTRACT FROM AUTHOR]

Published
2010
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48. Human endothelial cell life extension by telomerase expression.

Author

Yang, J, Chang, E, Cherry, A M, Bangs, C D, Oei, Y, Bodnar, A, Bronstein, A, Chiu, C P, and Herron, G S

Abstract

Normal human endothelial cells, like other somatic cells in culture, divide a limited number of times before entering a nondividing state called replicative senescence. Expression of the catalytic component of human telomerase, human telomerase reverse transcriptase (hTERT), extends the life span of human fibroblasts and retinal pigment epithelial cells beyond senescence without causing neoplastic transformation (Bodnar, A. G., Ouellette, M., Frolkis, M., Holt, S. E., Chiu, C. P., Morin, G. B., Harley, C. B., Shay, J. W., Lichtsteiner, S., and Wright, W. E. (1998) Science 279, 349-352; Jiang, X., Jimenez, G., Chang, E., Frolkis, M., Kusler, B., Sage, M., Beeche, M., Bodnar, A., Wahl, G., Tlsty, T., and Chiu, C.-P. (1999) Nat. Genet. 21, 111-114). Here, we show that both human large vessel and microvascular endothelial cells also bypass replicative senescence after introduction of hTERT. For the first time, we report that hTERT expression in these life-extended vascular cells does not affect their differentiated and functional phenotype and that these cells maintain their angiogenic potential in vitro. Furthermore, hTERT(+) microvascular endothelial cells have normal karyotype, and hTERT(+) endothelial cell strains do not exhibit a transformed phenotype. Relative to parental cells at senescence, hTERT-expressing endothelial cells exhibit resistance to induction of apoptosis by a variety of different conditions. Such characteristics are highly desirable for designing vascular transplantation and gene therapy delivery systems in vivo.

Published
1999

49. Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm.

Author

Wang, H., Yuan, J., van Veldhoven, P. J., de Vries, T., Smalbrugge, B., Geluk, E. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Anantathanasarn, S., and Nötzel, R.

Subjects
QUANTUM dots, INDIUM arsenide, INDIUM phosphide, LASERS, FABRY-Perot interferometers, CONTINUOUS wave radar, ELECTRONICS
Abstract

The first Butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser emitting around 1.55 µm is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB. [ABSTRACT FROM AUTHOR]

Published
2008
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50. Polarization control of gain of stacked InAs/InP (100) quantum dots at 1.55 μm: Interplay between ground and excited state transitions.

Author

Anantathanasarn, S., van Veldhoven, P. J., Eijkemans, T. J., de Vries, T., Smalbrugge, E., Geluk, E. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., and Nötzel, R.

Subjects
QUANTUM dots, INDIUM arsenide, INDIUM phosphide, EXCITED state chemistry, ENERGY levels (Quantum mechanics)
Abstract

The linear polarization of the optical gain of closely stacked InAs/InP (100) quantum dots (QDs) grown by metal-organic vapor-phase epitaxy with emission wavelength tuned into the 1.55 μm region is controlled by the number of stacked QD layers and the injection current. Increasing the number of stacked QD layers to five rotates the linear polarization of the cleaved-side photoluminescence and QD ground state (GS) gain, determined from the amplified spontaneous emission (ASE) of a Fabry–Pérot ridge-waveguide laser, from transverse electric (TE) to transverse magnetic due to vertical electronic coupling. When the QD GS ASE and gain saturate with an increase of the injection current and the excited state ASE and gain become dominant, the linear polarization of ASE and gain changes back to TE. This limits the polarization insensitive operation of QD-based semiconductor optical amplifiers, however, opening routes to novel functionalities. [ABSTRACT FROM AUTHOR]

Published
2008
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