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Materials with significant spin-orbit coupling enable efficient spin-to-charge interconversion, which can be utilized in novel spin electronic devices. A number of elements, mainly heavy-metals (HM) have been identified to produce a sizable spin current ($j_\mathrm{s}$), while supplied with a charge current ($j$), detected mainly in the neighbouring ferromagnetic (FM) layer. Apart from the spin Hall angle $\theta_\mathrm{SH}$ = $j_\mathrm{s}$/$j$, spin Hall conductivity ($\sigma_\mathrm{SH}$) is an important parameter, which takes also the resistivity of the material into account. In this work, we present a measurement protocol of the HM/FM bilayers, which enables for a precise $\sigma_\mathrm{SH}$ determination. Static transport measurements, including resistivity and magnetization measurements are accompanied by the angular harmonic Hall voltage analysis in a dedicated low-noise rotating probe station. Dynamic characterization includes effective magnetization and magnetization damping measurement, which enable HM/FM interface absorption calculation. We validate the measurement protocol in Pt and Pt-Ti underlayers in contact with FeCoB and present the $\sigma_\mathrm{SH}$ of up to 3.3$\times$10$^5$ S/m, which exceeds the values typically measured in other HM, such as W or Ta., Comment: 7 pages, 5 figures, submitted to IEEE Transaction on Electron Devices

Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-N\'eel domain walls (DWs). Here we investigate the creep evolution of the overall magnetic bubble morphology in these systems under the combined presence of in-plane and out-of-plane magnetic fields and we show that He$^+$ ion irradiation induces a transition of the internal DW structure towards a fully N\'eel spin texture. This transition can be correlated to a simultaneous increase in DMI strength and reduction in saturation magnetisation -- which are a direct consequence of the effects of ion irradiation on the bottom and top CoFeB interfaces, respectively. The threshold irradiation dose above which DWs acquire a pure N\'eel character is experimentally found to be between 12 $\times$ 10$^{18}$ He$^+$/m$^2$ and 16 $\times$ 10$^{18}$ He$^+$/m$^2$, matching estimations from the one dimensional DW model based on material parameters. Our results indicate that evaluating the global bubble shape during its expansion can be an effective tool to sense the internal bubble DW structure. Furthermore, we show that ion irradiation can be used to achieve post-growth engineering of a desired DW spin texture.

Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored spin-orbit torques are being developed. A method, which allows one to detect the acting torques in a given system as a function of the magnetization direction is the torque-magnetometry method based on a higher harmonics analysis of the anomalous Hall-effect. Here we show that the effective fields acting on magnetic domain walls that govern the efficiency of their dynamics require a sophisticated analysis taking into account the full angular dependence of the torques. Using a 1-D model we compared the spin orbit torque efficiencies by depinning measurements and spin torque magnetometry. We show that the effective fields can be accurately determined and we find good agreement. Thus our method allows us now to rapidly screen materials and predict the resulting quasi-particle dynamics., Comment: 15 page, 3 figures

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 {\Omega}.{\mu}m2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high temperature diffusion during annealing. The switching critical current density could be lower than 3.0 MA.cm-2 for devices with a 45 nm radius., Comment: 20 pages, 5 figures

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications., Comment: 15 pages, 3 figures

We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show for the first time depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents parallel to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared to previously used measurements for just two field directions (parallel and perpendicular to the DW) and shows the sensitivity of the spin-orbit torque to the precise DW structure and pinning sites., Comment: 11 pages, 3 figures

Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regime where DW velocities are low due to strong interactions with pinning sites. Here, we show gate voltage modulation of DW velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces., Comment: 21 pages, 6 figures

We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective damping are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well to the values derived from current induced switching measurements on individual nanopillars. Using a wafer scale inductive probe head could in the future enable wafer probe station based metrology of $j^{c0}$.

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks., Comment: 27 pages, 7 figures

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell., Comment: 17 pages, 5 figures

We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on AlO based MTJ systems, revealing tunneling magneto thermo power but no tunneling magneto thermocurrent., Comment: 9 pages, 3 figures