Search

Abstract Silicon (Si) materials for use in Lithium ion batteries (LIBs) are of continued interest to battery manufacturers. With an increasing number of commercially available Si materials, evaluating their performance becomes a challenge. Here, we use an empirical fitting function presented earlier to aid in the analysis of galvanostatic charge‐discharge data of commercial Si half‐cells with relatively high loading. We find that the fitting procedure is capable of detecting dynamic changes in the cell, such as reversible capacity fade of the Si electrode. This fading is found to be due to the highly lithiated Li2Si ↽⇀ Li3.5Si phase and that the behaviour is strongly dependent on the potential of this phase. EIS reveals that the Si electrode is responsible for the reversible behaviour due to progressive loss of Li+ leading to increasing resistance. SEM/EDX and XPS characterization are also employed to determine the origin of the irreversible resistance growth on the Si electrodes.

The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the Li3.5Si and Li2Si phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data.