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Radiation hardness up to 10 16 n eq /cm 2 is required in the future HEP experiments for most inner detectors. However, 10 16 n eq /cm 2 fluence is well beyond the radiation tolerance of even the most advanced semiconductor detectors fabricated by commonly adopted technologies: the carrier trapping will limit the charge collection depth to an effective range of 20–30 μm regardless of depletion depth. Significant improvement of the radiation hardness of silicon sensors has been taken place within RD39. Fortunately the cryogenic tool we have been using provides us a convenient way to solve the detector charge collection efficiency (CCE) problem at SLHC radiation level (10 16 n eq /cm 2 ). There are two key approaches in our efforts: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (⩽230 K); and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the LN 2 temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures. In this approach, we intend to study the trapping effect at temperatures below LN 2 temperature. A freeze-out of trapping can certainly help in the development of ultra-radiation hard Si detectors for SLHC. A detector CCE measurement system using ultra-fast picosecond laser with a He cryostat has been built at CERN. This system can be used to find out the practical cryogenic temperature range that can be used to freeze out the radiation-induced trapping levels, and it is ready for measurements on extremely heavily irradiated silicon detectors. Initial data from this system will be presented.

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There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (⩽150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN 2 ) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

RD39 collaboration develops new detector techniques for particle trackers, which have to withstand fluences up to 10 16 cm −2 of high-energy particles. The work focuses on the optimization of silicon detectors and their readout electronics while keeping the temperature as a free parameter. Our results so far suggest that the best operating temperature is around 130 K . We shall also describe in this paper how the current-injected mode of operation reduces the polarization of the bulk silicon at low temperatures, and how the engineering and materials problems related with vacuum and low temperature can be solved.

The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors.

The CERN RD39 Collaboration is developing super-radiation hard cryogenic Si detectors for applications in experiments of the LHC and the future LHC Upgrade. Radiation hardness up to the fluence of 10 16 n eq /cm 2 is required in the future experiments. Significant improvement in the radiation hardness of silicon sensors has taken place during the past years. However, 10 16 n eq /cm 2 is well beyond the radiation tolerance of even the most advanced semiconductor detectors made by commonly adopted technologies. Furthermore, at this radiation load the carrier trapping will limit the charge collection depth to the range of 20–30 μm regardless of the depletion depth. The key of our approach is freezing the trapping that affects Charge Collection Efficiency (CCE).

The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called ”Lazarus effect”, was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal “zigzag”-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p+ and n+ contacts is responsible for the “zigzag”- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation.

The pathogenicity of the purified basidiospores of Filosbasidiella neoformans was determined. The basidiospores were purified by successive filtration and inoculated into white Swiss female mice via the intracranial and intravenous route. At autopsy, infection was seen with as few as fifty inoculated cells. The brain, liver and spleen were examined culturally and histologically to prove the pathogenicity of the purified basidiospores .

Interactions between macrophages (alveolar and peritoneal) from normal, vaccinated (with heat-killed yeast cells), and Mycobacterium bovis BCG-treated mice and the mycelial and yeast phases of Histoplasma capsulatum were observed. Phagocytosis of microconidia, small hyphal fragments, and yeast cells occurred 4 to 6 h after the infection of macrophage cultures. Conversion to the yeast phase began at 6 to 7 h and was complete after a 72-h incubation at 37 degrees C. Macrophages surrounded and adhered to macroconidia and large hyphal elements. More macrophages (65 to 68%) from BCG-treated mice contained fungi at 24 h than did macrophages from normal or vaccinated mice. Although there was no increase in the number of fungi in macrophages from vaccinated mice, only the macrophages from BCG-treated mice contained fewer fungi after 48 h of infection with the mycelial phase of H. capsulatum. Fungal growth was not inhibited in any of the macrophage cultures when infected with the yeast phase. The macrophages infected with yeast cells were destroyed after 48 to 72 h in the culture. Only BCG-treated macrophages survived infection with the mycelial phase, whereas macrophages from normal and vaccinated mice were destroyed by the infection.

The pathogenicity of the purified hyphae of Filobasidiella neoformans was determined. The hyphal particles were inoculated into white Swiss female mice via the intracranial and intravenous route. Upon autopsy, infection was seen with as few as 25 hyphal elements. The brain, liver, and spleen were examined culturally and the brain examined histologically to prove the pathogenicity of the purified hyphae.

A retrospective study of 34,314 sputum specimens received by a reference laboratory over a 10-year period demonstrated that clinically significant fungi could be isolated even after long periods of delay between collecting and culturing. As a result of this study, it should be stressed that although immediate culturing for fungi is the ideal, specimens should not be rejected because of delays in transport.

The p-nitro-alpha-acetylamino-beta-hydroxypropiophenone (NAP) differential test for the identification of Mycobacterium tuberculosis recovered from clinical specimens was evaluated by two laboratories and found to be a rapid and accurate procedure with a specificity exceeding 99%.